BPW16N www.vishay.com vishay semiconductors rev. 1.8, 24-aug-11 1 document number: 81515 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon npn phototransistor description BPW16N is a silicon npn phototransistor with high radiant sensitivity in clear, t-? plastic package with flat window. it is sensitive to visible and near infrared radiation. on pcb this package size enables a ssembly of arrays with 2.54 mm pitch. features ? package type: leaded ? package form: t-? ? dimensions (in mm): ? 1.8 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 40 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? detector in electronic control and drive circuits note ? test condition see table basic characteristics note ? moq: minimum order quantity 94 8638 product summary component i ca (ma) ? (deg) 0.1 (nm) BPW16N 0.14 40 450 to 1040 ordering information ordering code packaging remarks package form BPW16N bulk moq: 5000 pcs, 5000 pcs/bulk t-? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emitter voltage v ceo 32 v emitter collector voltage v eco 5v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation t amb 55 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 3 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 450 k/w
BPW16N www.vishay.com vishay semiconductors rev. 1.8, 24-aug-11 2 document number: 81515 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - collector dark current vs. ambient temperature fi g. 2 - relative collector cu rrent vs. ambient temperature 020406080 0 25 50 75 100 125 p v - po w er dissipation (m w ) t am b - am b ient temperat u re (c) 100 94 8308 r thja = 450 k/ w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 32 v collector emitter dark current v ce = 20 v, e = 0 i ceo 1200na collector emitter capacitance v ce = 5 v, f = 1 mhz, e = 0 c ceo 8pf collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v i ca 0.07 0.14 ma angle of half sensitivity ? 40 deg wavelength of peak sensitivity p 825 nm range of spectral bandwidth 0.1 450 to 1040 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.01 ma v cesat 0.3 v turn-on time v s = 5 v, i c = 5 ma, r l = 100 t on 4.8 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 t off 5.0 s cut-off frequency v s = 5 v, i c = 5 ma, r l = 100 f c 120 khz 94 8235 20 i ceo - collector dark c u rrent (na) 100 40 60 80 t am b - am b ient temperat u re (c) 10 0 10 1 10 2 10 3 10 4 v ce = 20 v 0 0.6 0.8 1.0 1.2 1.4 2.0 20 40 60 80 100 1.6 1.8 94 8239 t am b - am b ient temperat u re (c) i ca rel - relati v e collector c u rrent v ce = 5 v e e = 1 m w /cm 2 = 950 nm
BPW16N www.vishay.com vishay semiconductors rev. 1.8, 24-aug-11 3 document number: 81515 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - collector ligh t current vs. irradiance fig. 4 - collector light curren t vs. collector emitter voltage fig. 5 - collector emitter capaci tance vs. collecto r emitter voltage fig. 6 - turn-on/turn-off time vs. collector current fig. 7 - relative spectral sensitivity vs. wavelength fig. 8 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.001 0.01 0.1 1 i - collector light c u rrent (ma) ca e e - irradiance (m w /cm 2 ) 10 94 8236 v ce =5v = 950 nm 0.1 1 10 0.01 0.1 1 i - collector light c u rrent (ma) ca v ce - collector emitter voltage (v) 100 94 8237 e e =1 m w /cm 2 = 950 nm 0.5 m w /cm 2 0.2 m w /cm 2 0.1 1 10 0 4 8 12 16 20 c ceo - collector emitter capacitance (pf) v ce - collector emitter voltage (v) 100 94 8240 f = 1 mhz 04812 0 2 4 6 8 12 t/t -t u rn on / t u rn off time (s) off i c - collector c u rrent (ma) 16 94 8238 10 on v ce =5v r l = 100 = 950 nm t off t on 400 600 1000 0 0.2 0.4 0.6 0.8 1.0 s( ) - relati v e spectral sensiti v ity rel - w a v elength (nm) 94 8241 800 0.4 0.2 0 94 8312 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 s rel - relati v e radiant sensiti v ity ? - ang u lar displacement
BPW16N www.vishay.com vishay semiconductors rev. 1.8, 24-aug-11 4 document number: 81515 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters technical dra w ings according to di n specifications 6.544-5047.01-4 iss u e: 2; 19.12.00 e c area not plane chip position 2.4 0.15 3.3 0.15 r 1.65 ? 1.8 0.1 0.4 + 0.15 (1.3) 1.5 0.25 0.8 0.1 2.2 0.3 2.7 0.3 29.1 0.5 0.5 + 0.2 - 0.1 2.54 nom. 96 12188
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