? semiconductor components industries, llc, 2007 june, 2007 - rev. p0 1 publication order number: np2600s/d np2600sa1, np2600sb1, np2600sc1 preferred devices advance information thyristor surge protector high voltage bidirectional tspd this thyristor surge prot ective device (t spd) prevents overvoltage dam age to sensitive circuits from lightning, induction and power line crossings. this is a breakover-triggered crowbar protector. turn-of f occurs when the sur ge current falls below the holding current value. features ? high surge current capability: 50 a, 80 a & 100 a, 10 x 1000 sec, for controlled temperature environments ? the np2600sx is used to help equipment meet various regulatory requirements including: bellcore 1089, itu k.20 & k.21, iec 950, ul 1459 & 1950 and fcc part 68. ? bidirectional protection in a single device ? little change of voltage limit with transient amplitude or rate ? freedom from wearout mechanisms present in non-semiconductor devices ? fail-safe, shorts when overstressed, preventing continued unprotected operation ? surface mount technology ? indicates ul registered - file #e210057 ? this is a pb-free device maximum ratings (t j = 25 c unless otherwise noted) rating value unit off-state voltage - maximum 220 v np2600sx1 x = series ratings a b c maximum pulse surge short circuit current non-repetitive double exponential decay waveform (notes 1 and 2) 2 x 10 s 10 x 160 s 10 x 560 s 5 x 310 s 10 x 1000 s 150 90 50 75 50 250 150 100 100 80 500 200 150 200 100 a(pk) stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. allow cooling before testing second polarity. 2. measured under pulse conditions to reduce heating. 3. haefely test method. this document contains information on a new product. specifications and information herein are subject to change without notice. bidirectional tspd 50, 80, and 100 amp surge 260 volts high hold current 270 ma min preferred devices are recommended choices for future use and best overall value. device package shipping ? ordering information mt1 mt2 smb (no polarity) (jedec do-214aa) case 403c () 261x = device code x = a, b or c a = assembly location y = year ww = work week = pb-free package marking diagram ayww 261x http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. np2600sa1t3g smb (pb-free) 2500/tape & reel (note: microdot may be in either location) np2600sb1t3g smb (pb-free) 2500/tape & reel np2600sc1t3g smb (pb-free) 2500/tape & reel
np2600sa1, np2600sb1, np2600sc1 http://onsemi.com 2 thermal characteristics characteristic symbol max unit operating temperature range blocking or conducting state t j1 -40 to +125 c overload junction temperature - maximum conducting state only t j2 +175 c instantaneous peak power dissipation (i pk = 80 a, 10x1000 sec @ 25 c) p pk 4000 w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) devices are bidirectional. all electrical parameters apply to forward and reverse polarities. characteristics symbol min typ max unit breakover voltage (both polarities) (dv/dt = 100 v/ s, i sc = 1.0 a, vdc = 1000 v) v (bo) - - 300 v breakdown voltage (i (br) = 1.0 ma) both polarities v drm 220 - - v off state current (v d1 = 50 v) both polarities off state current (v d2 = v drm ) both polarities i d1 i d2 - - - - 2.0 5.0 a on-state voltage (i t = 2.2 a) (pw 300 s, duty cycle 2%) (note 4) v t - 1.53 4.0 v breakover current (f = 60 hz, v drm = 1000 v rms , r s = 1.0 k ) both polarities i (bo) - 260 800 ma holding current (both polarities) (note 4) v s = 500 v; i t (initiating current) = 1.0 a i h 270 - - ma critical rate of rise of off-state voltage (linear waveform, v d = rated v (bo) , t j = 25 c) dv/dt 2000 - - v/ s capacitance (f = 1.0 mhz, 2.0 vdc) (note 5) np2600sa1 np2600sb1 np2600sc1 c 0 - - - 80 60 30 - - - pf 4. measured under pulse conditions to reduce heating. 5. signal level 1.0 v rms . figure 1. exponential decay pulse waveform time ( s) 0 50 0 ipp - peak pulse current - %ipp 100 t r = rise time to peak value t f = decay time to half value t r t f peak value half value +voltage -v oltage -i +i v t v drm v (bo) i t i (bo) i h figure 2. voltage current characteristic of tspd symbol parameters v drm peak off state voltage v (bo) breakover voltage i (bo) breakover current i h holding current v t on state voltage i t on state current
np2600sa1, np2600sb1, np2600sc1 http://onsemi.com 3 package dimensions a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 smb case 403c-01 issue a *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 8:1 2.743 0.108 2.159 0.085 2.261 0.089 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 np2600s/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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