IRGBC20KD2-S short circuit rated ultrafast copack igbt insulated gate bipolar transistorwith ultrafast soft recovery diode pd - 9.1125 v ces = 600v v ce(sat) 3.5v @v ge = 15v, i c = 6.0a parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 10 i c @ t c = 100c continuous collector current 6.0 i cm pulsed collector current ? 20 a i lm clamped inductive load current ? 20 i f @ t c = 100c diode continuous forward current 7.0 i fm diode maximum forward current 20 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 60 w p d @ t c = 100c maximum power dissipation 24 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ------ ------ 2.1 r jc junction-to-case - diode ------ ------ 3.5 c/w r ja junction-to-ambient, (pcb mount)** ------ ----- 40 r ja junction-to-ambient, typical socket mount - ---- ----- 80 wt weight ------ 2 (0.07) ------ g (oz) absolute maximum ratings e g n-channel c ** when mounted on 1" square pcb (fr-4 or g-10 materi al) for recommended footprint and soldering techni ques refer to application note #an-994. description co-packaged igbts are a natural extension of international rectifier's wellknown igbt line. they provide the convenience of an igbt and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. these new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. features ? short circuit rated -10s @125c, v ge = 15v ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for high operating frequency (over 5khz) see fig. 1 for current vs. frequency curve smd-220 downloaded from: http:///
IRGBC20KD2-S ? repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 20 ) notes: parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 ---- ---- v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ---- 0.37 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 2.4 3.5 i c = 6.0a v ge = 15v ---- 3.6 ---- v i c = 10a see fig. 2, 5 ---- 2.8 ---- i c = 6.0a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 5.5 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ---- -11 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 1.9 3.3 ---- s v ce = 100v, i c = 6.0a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 1700 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.4 1.7 v i c = 8.0a see fig. 13 ---- 1.3 1.6 i c = 8.0a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 17 26 i c = 6.0a q ge gate - emitter charge (turn-on) ---- 4.3 6.8 nc v cc = 400v q gc gate - collector charge (turn-on) ---- 6.4 11 see fig. 8 t d(on) turn-on delay time ---- 59 ---- t j = 25c t r rise time ---- 38 ---- ns i c = 6.0a, v cc = 480v t d(off) turn-off delay time ---- 110 210 v ge = 15v, r g = 50 t f fall time ---- 80 120 energy losses include "tail" and e on turn-on switching loss ---- 0.28 ---- diode reverse recovery. e off turn-off switching loss ---- 0.15 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 0.43 0.90 t sc short circuit withstand time 10 ---- ---- s v cc = 360v, t j = 125c v ge = 15v, r g = 50 , v cpk < 500v t d(on) turn-on delay time ---- 52 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 35 ---- ns i c = 6.0a, v cc = 480v t d(off) turn-off delay time ---- 170 ---- v ge = 15v, r g = 50 t f fall time ---- 170 ---- energy losses include "tail" and e ts total switching loss ---- 0.7 ---- mj diode reverse recovery. l e internal emitter inductance ---- 7.5 ---- nh measured 5mm from package c ies input capacitance ---- 350 ---- v ge = 0v c oes output capacitance ---- 45 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 4.7 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 37 55 ns t j = 25c see fig. ---- 55 90 t j = 125c 14 i f = 8.0a i rr diode peak reverse recovery current ---- 3.5 5.0 a t j = 25c see fig. ---- 4.5 8.0 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 65 138 nc t j = 25c see fig. ---- 124 360 t j = 125c 16 di/dt = 200a/ s di (rec)m /dtdiode peak rate of fall of recovery ---- 240 ---- a/s t j = 25c see fig. during t b ---- 210 ---- t j = 125c 17 ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s,single shot. ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 50 , ( see fig. 19 ) downloaded from: http:///
fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics IRGBC20KD2-S 0 2 4 6 8 0.1 1 10 10 0 load current (a) f, frequency (khz) 60% of rated v oltage duty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 13.5w 0.1 1 10 100 0.1 1 1 0 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge 1 10 100 51 01 52 0 c i , col lector-to-emitter current (a) v , gate-to-emitter voltage (v) ge t = 25c t = 150c j j v = 100v 5s pulse width cc downloaded from: http:///
fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGBC20KD2-S fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 0 2 4 6 8 10 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 16 0 t , case temperature (c) c ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge i = 12a i = 6.0a i = 3.0a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c downloaded from: http:///
IRGBC20KD2-S fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 0 100 200 300 400 500 600 700 11 01 0 0 ce c, capacitance (pf) v , collector-to-emitter voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 4 8 12 16 20 ge v , gate-to-emitter voltage (v) q , total gate charge (nc) g v = 480v i = 6.0a cec 0.450 0.455 0.460 0.465 0.470 0.475 0.480 20 25 30 35 40 45 50 55 g total switching losses (mj) r , gate resistance ( ) w v = 480v v = 15v t = 25c i = 6.0a ccge c c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 16 0 c t , case temperature (c) total switching losses (mj) r = 50 v = 15v v = 480v gge cc i = 12a i = 6.0a i = 3.0a c c c downloaded from: http:///
fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current IRGBC20KD2-S 0.0 0.4 0.8 1.2 1.6 2.0 03691 21 5 c total switching losses (mj) i , collector-to-emitter current (a) r = 50 t = 150c v = 480v v = 15v gc cc ge 0.1 1 10 100 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c gej 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j downloaded from: http:///
fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt IRGBC20KD2-S 0 20 40 60 80 100 100 1000 f di /dt - (a/s) t - (ns) rr i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 0 100 200 300 400 500 100 1000 f di /dt - (a/s) rr q - (nc) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j downloaded from: http:///
t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = er ec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same t ype device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr IRGBC20KD2-S downloaded from: http:///
vg gate signal device under tes t current d.u.t. vol tage i n d. u.t. current in d1 t0 t1 t2 fig. 18e - macro waveforms for test circuit of fig. 18a fig. 19 - clamped inductive load test circuit r l = 480v 4 x i c @25c 0 - 480v fig. 20 - pulsed collector current test circuit IRGBC20KD2-S d.u.t. v * c 50v l 1000v 6000f 100v dimensions in millimeters and ( inches ) 0.46 (0.018) 0.64 (0.025) 2.54 (0.100) 4.20 (0.165) 4.69 (0.185) 5.08 (0.200) ref. 1.40 (0.055) 1.15 (0.045) 15.49 (0.610)14.73 (0.580) 1.15 (0.045) min. 0.69 (0.027) 0.93 (0.037) 1.27 (0.050) 1.78 (0.070) 9.91 (0.390) 10.67 (0.420) 10.54 (0.415) 10.29 (0.405) 2.79 (0.110)2.29 (0.090) 1.40 (0.055) max. 2.89 (0.114)2.64 (0.104) 0.010 (0.004) 5 typ. 2 1.32 (0.052) 1.22 (0.048) 1 2 3 outline smd-220 4 lead assignment s 1 - gate 2 - collector 3 - emitter 4 - collector downloaded from: http:///
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