sym b ol RS1AF rs1bf rs1df rs1gf rs1j f rs1k f rs1mf unit 1.0a s urface mount glass passivated fast recovery diode RS1AF-rs1mf feat ures m aximum r atings and electrical characteristics @t a =2 5 c unless otherwise specified 1 of 2 RS1AF-rs1mf z ibo seno electronic engineering co., ltd. www.senocn.com sm af su rge overload rating to 30a peak ideally suited for automatic assembly built-in strain relief classification rating 94v-o low power loss weight: 0.037 grams (approx.) feat ures ! ! low f or ward voltage drop ! ! ! ! plastic case material has ul flammability m echanic al data ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version 3.60 3.20 2.80 2.40 di m min max a b c d e f g a ll d imensions in mm 0.20 0.10 4.80 4.40 1.10 0.90 0.90 - 1.43 1.38 ca se: smaf, molded plastic a b c d f e g characteristi c 150 250 500 ns 1.3 v -65 to +150 c 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms reverse voltage v r(rm s) av erage rectified output current @t l = 100 c i o 1.0 a non-repeti tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward vo ltage @i f = 1. 0a v fm pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 10 500 a reverse rec overy time (note 1) t rr ty pical junction capacitance (note 2) c j 15 pf ty pical thermal resistance (note 3) r jl 30 c /w operati ng and storage temperature range t j, t stg note: 1. measured with i f = 0. 5a , i r = 1 .0a, i rr = 0.25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 l and area. a l l d a t a s h e e t
2 of 2 RS1AF-rs1mf RS1AF-rs1mf z ibo seno electronic engineering co., ltd. www.senocn.com 0 0.4 1 . 2 25 50 75 100 125 150 175 i , a verage rectified current (a) o t , terminal temperature ( c) fig. 1 forward current derating curve t 0.2 0.6 0.8 1.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i inst ant aneous forward current (a) f, v , inst antaneous forward voltage (v) fig .2 t ypical forward characteristics f t = 25c j i pulse width: 300 s f 0 10 20 30 1 10 100 i , peak forward surge current (a ) fsm number of cycles at 60hz fig. 3 forward surge current derating curve single half-sine-w ave (jedec method) t = 150c j 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under t est t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , inst antaneous reverse current (a ) r percent of ra ted peak reverse voltage (%) fig .4 t ypical reverse characteristics t = 125 c j t = 25c j a l l d a t a s h e e t
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