irg5k50p5k50pm06e IRG5U50HH12E 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 igbt h - bridge pow ir eco 2 ? package applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply ? induction heating ? dc inverter drive v ces = 1200v i c = 50a at t c = 80c t sc 10sec v ce(on) = 3.20v at i c = 50a absolute maximum ratings of igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 50 a t c = 25c 85 a i cm pulse collector current t j = 150c 100 a p d maximum power dissipation (igbt) t c = 25c, t j = 150c 390 w t j maximum igbt junction temperature 150 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir eco 2 ? package industry standard lead free rohs compliant, environmental friendly base part number package type standard pack quantity orderable part number IRG5U50HH12E pow ir eco 2 ? box 80 IRG5U50HH12E downloaded from: http:///
irg5k50p5k50pm06e IRG5U50HH12E 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 4.5 5.3 6.0 v i c = 0.50ma, v ce = v ge v ce(on) collector to emitter saturation voltage (module level) 3.20 3.50 v t j = 25c i c = 50a, v ge = 15v 3.80 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 115 ns t j = 25c v cc =600v, i c = 50a, r g = 15?, v ge =15v, inductive load 110 t j = 125c t r rise time 70 ns t j = 25c 70 t j = 125c t d(off) turn - off delay time 305 ns t j = 25c 325 t j = 125c t f fall time 125 ns t j = 25c 160 t j = 125c e on turn - on switching loss 3.6 mj t j = 25c 4.6 t j = 125c e off turn - off switching loss 1.0 mj t j = 25c 1.9 t j = 125c q g total gate charge 630 nc t j = 25c c ies input capacitance 6.0 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.50 c res reverse transfer capacitance 0.20 rbsoa reverse bias safe operating area trapezoid i c = 100a,v cc = 960v, v p =1200v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 600v, v ge = 15v, t j = 150c downloaded from: http:///
irg5k50p5k50pm06e IRG5U50HH12E 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 100 a diode continuous forward current, t c = 80c 50 i fm pulse diode current 100 a ntc - thermistor characteristic values typ. max. unit parameter r 25 t c =25c 5 k? ? r/r t c =100c r 100 =481? 5 % p 25 t c =25c 50 mw b 25/50 r 2 =r 25 exp[b 25/50 (1/t 2 - 1/(298.15k))] 3380 k b 25/80 r 2 =r 25 exp[b 25/80 (1/t 2 - 1/(298.15k))] 3440 k module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.32 c/w r jc junction - to - case (diode) 0.87 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m mounting screw: m6 4.0 6.0 nm g weight 200 g electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.20 v t j = 25c i f = 50a , v ge = 0v 2.70 2.40 t j = 125c i rr peak reverse recovery current 40 a t j = 25c i f 50a, di/dt=850a/ s, v rr = 600v, v ge = - 15v 50 t j = 125c q rr reverse recovery charge 3.0 c t j = 25c 5.6 t j = 125c e rec reverse recovery energy 1.02 mj t j = 25c 2.01 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5U50HH12E 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig.3 typical freewheeling diode characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ge =15v t j =125 c t j =25 c v ce (v) i c (a) 0 10 20 30 40 50 60 70 80 90 100 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0 6.6 t j =125 c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v v ce (v) i c (a) 0 10 20 30 40 50 60 70 80 90 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ge =0v t j =125c t j =25c v f (v) i f (a) 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 9 v ce = 0 v,f=1mhz c ies c oes c (nf) v ce (v) 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 8 9 10 11 v cc = 600v , v ge = +/-15v , i c = 50a , t j = 125 c e off e on e rec e (mj) rg ( ?? 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 v cc =600v,v ge =+/-15v, r g =15 ohm,t j =125 c e off e on e rec e (mj) i c (a) downloaded from: http:///
irg5k50p5k50pm06e IRG5U50HH12E 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig.11 ntc temperature characteristics fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 z th jc ( k/w ) t ( s ) z th jc :igbt 0.001 0.01 0.1 1 2 0.0 0.2 0.4 0.6 0.8 1.0 z th jc ( k/w ) t ( s ) z th jc :diode 0 10 20 30 40 50 60 70 80 1 10 100 duty cycle:50% t j =125c t c =80c rg=15 ohm,v ge =15v frequency (khz) load current (a) 0 10 20 30 40 50 60 70 80 90 100 110 120 0 2 4 6 8 10 12 14 16 18 20 r ( k ohm ) t c (c) rtyp 0 200 400 600 800 1000 1200 0 20 40 60 80 100 i c (a) v ces (v) module chip square wave: diode as specified v cc i downloaded from: http:///
irg5k50p5k50pm06e IRG5U50HH12E 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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