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this is information on a product in full production. april 2015 docid024365 rev 7 1/19 19 stgw60h65dfb, stgwa60h65dfb STGWT60H65DFB trench gate field-stop igbt, hb series 650 v, 60 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 1.6 v (typ.) @ i c = 60 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? very fast soft recovery antiparallel diode applications ? photovoltaic inverters ? high frequency converters description these are igbt devices developed using an advanced proprietary trench gate and field-stop structure. the devices are part of the new hb series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. g (1) e (3) c (2, tab) to-247 1 2 3 to-3p 1 2 3 tab to-247 long leads table 1. device summary order code marking package packing stgw60h65dfb gw60h65dfb to-247 tube stgwa60h65dfb g60h65dfb to-247 long leads tube STGWT60H65DFB gwt60h65dfb to-3p tube www.st.com
contents stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 2/19 docid024365 rev 7 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 to-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-3p package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid024365 rev 7 3/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 80 (1) 1. current level is limited by bond wires. a i c continuous collector current at t c = 100 c 60 a i cp (2) 2. pulse width limited by ma ximum junction temperature. pulsed collector current 240 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 80 (1) a i f continuous forward current at t c = 100 c 60 a p tot total dissipation at t c = 25 c 375 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.4 c/w r thjc thermal resistance junction-case diode 1.14 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 4/19 docid024365 rev 7 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 60 a 1.60 2 v v ge = 15 v, i c = 60 a t j = 125 c 1.75 v ge = 15 v, i c = 60 a t j = 175 c 1.85 v f forward on-voltage i f = 60 a 2 2.6 v i f = 60 a t j = 125 c 1.7 v i f = 60 a t j = 175 c 1.6 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -7792- pf c oes output capacitance - 262 - pf c res reverse transfer capacitance -158-pf q g total gate charge v cc = 520 v, i c = 60 a, v ge = 15 v, see figure 29 -306-nc q ge gate-emitter charge - 126 - nc q gc gate-collector charge - 58 - nc
docid024365 rev 7 5/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v, see figure 28 -66 ns t r current rise time - 38 - ns (di/dt) on turn-on current slope - 1216 a/s t d(off) turn-off delay time 210 ns t f current fall time - 20 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 1590 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 900 - j e ts total switching losses - 2490 - j t d(on) turn-on delay time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 28 -59 ns t r current rise time - 40 - ns (di/dt) on turn-on current slope - 1230 a/s t d(off) turn-off delay time 242 ns t f current fall time - 147 - ns e on (1) turn-on switching losses - 2860 - j e off (2) turn-off switching losses - 1255 - j e ts total switching losses - 4115 - j table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 60 a, v r = 400 v, di/dt = 100a/s , v ge = 15 v, see figure 28 -60-ns q rr reverse recovery charge - 99 - nc i rrm reverse recovery current - 3.3 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 187 - a/s e rr reverse recovery energy - 68 - j t rr reverse recovery time i f = 60 a, v r = 400 v, di/dt = 100a/s , v ge = 15 v, t j = 175 c, see figure 28 - 310 - ns q rr reverse recovery charge - 1550 - nc i rrm reverse recovery current - 10 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -59-a/s e rr reverse recovery energy - 674 - j
electrical characteristics stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 6/19 docid024365 rev 7 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) *,3')65 , & $ 9 &( 9 9 *6 9 9 *6 9 9 *6 9 *,3')65 , & $ 9 &( 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 figure 4. transfer characteristics figure 5. collector current vs. case temperature *,3')65 , & $ 9 *( 9 9 &( 9 7 m ?& 7 m ?& i c 60 40 20 0 0 50 t c (c) 75 (a) 25 100 80 125 150 v ge = 15v, t j = 175 c gipd270820131347fsr figure 6. power dissipation vs. case temperature figure 7. v ce(sat) vs. junction temperature p tot 300 200 100 0 0 50 t c (c) 75 (w) 25 100 125 150 v ge = 15v, t j = 175 c gipd270820131401fsr v ce(sat) 1.8 1.6 1.4 1.2 -50 t j (c) (v) 100 2.0 050 2.2 150 2.4 2.6 v ge = 15v i c = 120a i c = 60a i c = 30a gipd021020131457fsr
docid024365 rev 7 7/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB electrical characteristics figure 8. v ce(sat) vs. collector current figure 9. forward bias safe operating area v ce(sat) 1.4 1.2 020 i c (a) (v) 40 60 80 2.2 2.0 1.8 1.6 v ge = 15v t j = 175c t j = 25c t j = -40c 2.4 100 gipd270820131423fsr , & $ 9 &( 9 9 &(vdw olplw 7 m ? ?& 7 f ?& 9 *( 9 vlqjohsxovh pv ?v ?v ?v *,3*$/6 figure 10. diode v f vs. forward current figure 11. normalized v (br)ces vs. junction temperature *,3*(:):'9) 9 ) 9 , ) $ 7 m ?& 7 m ?& 7 m ?& v (br)ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 i c = 2ma gipd280820131415fsr figure 12. normalized v ge(th) vs. junction temperature figure 13. gate charge vs. gate-emitter voltage v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 i c = 1ma gipd280820131503fsr v ge (v) 4 2 0 0 q g (nc) 50 100 150 200 6 8 250 300 350 10 12 14 v cc = 520v, i c = 60a, i g = 1ma gipd280820131507fsr
electrical characteristics stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 8/19 docid024365 rev 7 figure 14. switching losses vs temperature figure 15. switching losses vs gate resistance e (j) 1800 1000 200 25 t j (c) 50 75 100 125 2600 v cc = 400v, v ge = 15v r g = 10, i c = 60a 150 e off e on gipd290820131623fsr e(j) 2100 1300 500 2 r g () 610 2900 v cc = 400v, v ge = 15v i c = 60a, t j = 175 c 14 18 e off e on gipd280820131527fsr figure 16. switching losses vs collector curren t figure 17. switching losses vs collector emitter voltage e (j) 2000 1000 0 0 i c (a) 20 40 60 80 3000 4000 5000 6000 7000 v cc = 400v, v ge = 15v r g = 10, t j = 175c 100 e off e on gipd280820131538fsr e (j) 2300 1300 300 150 v ce (v) 250 350 450 3300 t j = 175c, v ge = 15v r g = 10, i c = 60a e off e on 4300 gipd280820131554fsr figure 18. switching times vs collector current figure 19. switching times vs gate resistance t (ns) 100 10 1 0 i c (a) 20 40 60 80 t j = 175c, v ge = 15v r g = 10, v cc = 400v 100 t f t doff t don t r gipd280820131613fsr t (ns) 100 10 r g () 48 t j = 175c, v ge = 15v i c = 60a, v cc = 400v 12 t f t doff 16 t don t r 20 gipd280820131622fsr
docid024365 rev 7 9/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB electrical characteristics figure 20. reverse recovery current vs. diode current slope figure 21. reverse recovery time vs. diode current slope i rm (a) 70 30 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 50 60 40 20 10 80 t j = 25c gipd280820131635fsr t rr (ns) 150 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 250 200 100 50 t j = 25c 300 gipd280820131643fsr figure 22. reverse recovery charge vs. diode current slope figure 23. reverse recovery energy vs. diode current slope q rr (nc) 1500 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 2500 2000 1000 500 t j = 25c 3000 3500 4000 gipd280820131650fsr e rr (j) 300 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 500 400 200 100 t j = 25c 600 700 800 gipd280820131656fsr figure 24. capacitance variations figure 25. collector current vs. switching frequency c(pf) 1000 100 10 0.1 v ce (v) 110 10000 c ies c oes c res 100 f = 1 mhz gipd280820131518fsr 20 40 60 80 100 110 ic (a) f (khz) g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =10 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c gipd080120151105fsr
electrical characteristics stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 10/19 docid024365 rev 7 figure 26. thermal impedance for igbt figure 27. thermal impedance for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid024365 rev 7 11/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB test circuits 3 test circuits figure 28. test circuit for inductive load switching figure 29. gate charge test circuit figure 30. switching waveform figure 31. diode reverse recovery waveform am01504v1 am01505v1 k k k k k k am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t s t f q rr i rrm t v rrm dv/dt 10%
package information stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 12/19 docid024365 rev 7 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-247 package information figure 32. to-247 package outline 0075325_h
docid024365 rev 7 13/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB package information table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package information stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 14/19 docid024365 rev 7 4.2 to-247 long leads package information figure 33. to-247 long leads package outline 8463846_a_f
docid024365 rev 7 15/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB package information table 9. to-247 long leads mechanical data dim. mm min. typ. max. a4.905.005.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b1.16 1.26 b2 3.25 b3 2.25 c0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e5.345.445.54 l 19.80 19.92 20.10 l1 4.30 p3.503.603.70 q5.60 6.00 s6.056.156.25
package information stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 16/19 docid024365 rev 7 4.3 to-3p package information figure 34. to-3p package outline 8045950_b
docid024365 rev 7 17/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB package information table 10. to-3p mechanical data dim. mm min. typ. max. a 4.60 4.80 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.70 13.90 14.10 e 15.40 15.60 15.80 e1 13.40 13.60 13.80 e2 9.40 9.60 9.90 e 5.15 5.45 5.75 l 19.80 20 20.20 l1 3.30 3.50 3.70 l2 18.20 18.40 18.60 ?p 3.30 3.40 3.50 ?p1 3.10 3.20 3.30 q 4.80 5 5.20 q1 3.60 3.80 4
revision history stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB 18/19 docid024365 rev 7 5 revision history table 11. document revision history date revision changes 12-mar-2013 1 initial release. 30-aug-2013 2 document status promoted from preliminary to production data. added section 2.1: electrical characteristics (curves) . 31-oct-2013 3 updated v ce(sat) in table 4: static characteristics . 24-feb-2014 4 updated title and description in cover page. 09-jan-2015 5 updated features in cover page, table 2: absolute maximum ratings , and table 6: igbt switching characteristics (inductive load) . updated figure 5: collector current vs. case temperature , figure 6: power dissipation vs. case temperature , figure 8: v ce(sat) vs. collector current , figure 18: switching times vs collector current , figure 19: switching times vs gate resistance and figure 20: reverse recovery current vs. diode current slope . added figure 25: collector current vs. switching frequency . updated section 4: package information . minor text changes. 23-mar-2015 6 text edits throughout document. in document, added new order code stgwa60h65dfb in to-247 long leads package, with accompanying information and data. in section 2.1: electrical characteristics (curves) : - updated figure 2 , figure 3 , figure 4 , figure 7 , figure 9 17-apr-2015 7 text edits throughout document. in section 2: electrical characteristics : - updated table 4: static characteristics - updated table 6: igbt switching characteristics (inductive load) in section 2.1: electrical characteristics (curves) : - updated figure 3 and figure 9
docid024365 rev 7 19/19 stgw60h65dfb, stgwa60h65dfb, STGWT60H65DFB important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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