er3ab thru er3jb 3 amp super fast recovery silicon rectifier 50 to 6 00 volts features for surface mount applications extremely low thermal resistance easy pick and place high temp soldering: 250 c for 10 seconds at terminals\ super fast recovery times for high effieciency maximum ratings operating temperature: - 50 c to +1 50 c storage temperature: - 50 c to +1 50 c maximum thermal resistance; 1 6 c/w junction to lead m cc catalog number device marking maximum rec urrent peak reverse voltage maximum rms voltage maximum dc blocking voltage er3a b er3a b 50v 35v 50v er3b b er3b b 100v 70v 100v er3c b er3c b 150v 105v 150v er3d b er3d b 200v 140v 200v er3g b er3g b 400v 280v 400v er3j b er3j b 600v 420v 600v electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 3.0a t l = 75 c peak forward surge current i fsm 100a 8.3ms, half sine maximum instantaneous forward voltage er3a b - 3 d b er3 g b v f .9 5 v 1.25v i fm = 3.0a; t j = 25 c maximum dc reverse current at rated dc blocking voltage i r 5 m a 2 00 m a t j = 25 c t j = 100 c maximum reverse recovery time t rr 35ns i f =0.5a, i r =1.0a, i rr =0.25a typical junction capacitance c j 45pf measured at 1.0mhz, v r =4.0v *pulse test: pulse width 3 00 m sec, duty cycle 2% 0.0 5 0? 0.1 06 0. 083 ? suggested solder pad layout er3 j b 1. 70 v mcc www. mccsemi .com do-214aa ( s m b j ) ( le ad f r am e ) a b d c e f g h dimensions inches mm dim min max min max note a . 1 60 . 185 4 .06 4.70 b . 1 30 . 1 55 3.30 3.94 c . 0 0 6 . 0 1 2 0.15 0. 31 d . . 030 . 0 6 0 0 . 76 1 . . 5 2 e . 200 . 2 20 5. 08 5. 59 f . 0 79 . 1 03 2. 01 2. 62 g . 0 75 . 087 1 . 91 2. 2 1 h .00 2 . 0 0 8 0.05 0. 20 3 om p on ent s 21 20 1 i t a sc a s t ree t ch at s w or th ! " # $ % ! " #
er3a b thru er3 jb figure 3 junction capacitance .1 .2 1 .4 2 10 20 404 100 200 1 2 6 10 20 100 junction capacitance - pf versus reverse voltage - volts pf volts 60 40 4 400 1000 t j =25 c figure 1 typical forward characteristics instantaneous forward current - amperes versus instantaneous forward voltage - volts volts 4 6 20 10 amps .4 1.4 .6 .8 1.0 1.2 .01 .02 .04 .06 .1 .2 .4 .6 1 2 2 5 c 40 60 100 1.6 average forward rectified current - amperes versus l ea d temperature - c figure 2 forward derating curve 40 60 100 120 140 160 0 .5 1.0 1.5 single phase, half wave 60hz resistive or inductive load amps c 80 2.0 2.5 3.0 mcc www. mccsemi .com er3 a b - 3d b er3 e b - 3 g b er3 j b
er3a b thru er3 jb t rr +0.5a 0 -0.25 -1.0 1cm set time base for 20/100ns/cm 25vdc 1 w 50 w 10 w oscilloscope note 1 pulse generator note 2 notes: 1. rise time = 7ns max. input impedance = 1 megohm, 22pf 2. rise time = 10ns max. source impedance = 50 ohms 3. resistors are non-inductive figure 6 reverse recovery time characteristic and test circuit diagram 1 100 4 0 25 50 75 8 figure 5 peak forward surge current peak forward surge current - amperes versus number of cycles at 60hz - cycles cycles 2 6 10 20 60 80 40 100 125 150 figure 4 typical reverse characteristics instantaneous reverse leakage current - microamperes versus percent of rated peak reverse voltage - volts volts 40 60 200 100 m amps 20 120 40 60 80 100 .1 .2 .4 .6 1 2 4 6 10 20 t j =2 5 c 400 600 1000 140 amps t j =7 5 c t j =10 0 c mcc www. mccsemi .com
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