hexfet ? power mosfet d s g to-220ab g d s gate drain source application ? ? optimized for ups/inverter applications ? ? low voltage power tools benefits ? ? best in class performance for ups/inverter applications ? ? very low rds(on) at 4.5v vgs ? ? ultra-low gate impedance ? ? fully characterized avalanche voltage and current ? ? lead-free, rohs compliant base part number package type standard pack form quantity IRLB8314PBF to-220ab tube 50 IRLB8314PBF orderable part number ? s d g absolute maximium rating symbol parameter max. units v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 171 ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 120 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 130 i dm pulsed drain current ?? 664 p d @t c = 25c maximum power dissipation 125 w p d @t c = 100c maximum power dissipation 63 w linear derating factor 0.83 w/c t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 1.2 c/w ? r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ? ??? 62 a ? notes ?? through ?? are on page 8 v dss 30 v r ds(on) max (@ v gs = 10v) 2.4 ? m ??? (@ v gs = 4.5v) 3.2 qg (typical) 40 nc i d (silicon limited) 171 ? i d (package limited) 130a a IRLB8314PBF 1 2016-08-04
? IRLB8314PBF 2 2016-08-04 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 14 ??? mv/c reference to 25c, i d = 1ma ? r ds(on) ??? 1.9 2.4 m ??? v gs = 10v, i d = 68a ? ??? 2.6 3.2 v gs = 4.5v, i d = 68a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 100a ? v gs(th) / ? t j gate threshold voltage coefficient ??? -7.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds =24 v, v gs = 0v ??? ??? 150 v ds =24v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 307 ??? ??? s v ds = 15v, i d =68a q g total gate charge ??? 40 60 ? q gs1 pre-vth gate-to-source charge ??? 6.8 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 13 ??? nc ? v gs = 4.5v q gd gate-to-drain charge ??? 8.7 ??? ? i d = 68a q godr gate charge overdrive ??? 11.5 ??? ? q sw switch charge (qgs2 + qgd) 21.7 ? r g gate resistance ??? 1.7 ??? ?? t d(on) turn-on delay time ??? 19 ??? v dd = 15v t r rise time ??? 142 ??? ns i d = 68a t d(off) turn-off delay time ??? 32 ??? r g = 1.8 ?? t f fall time ??? 72 ??? v gs = 4.5v ? c iss input capacitance ??? 5050 ??? ? v gs = 0v c oss output capacitance ??? 890 ??? pf ? v ds = 15v c rss reverse transfer capacitance ??? 500 ??? ? ? = 1.0mhz static drain-to-source on-resistance avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 180 mj e as (tested) single pulse avalanche energy tested value ?? 900 i ar avalanche current ? 68 a e ar repetitive avalanche energy ? mj 12.5 diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 171 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current ??? ??? 664 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c,i s = 68a,v gs = 0v ?? t rr reverse recovery time ??? 21 31 ns t j = 25c i f = 68a ,v dd =15v q rr reverse recovery charge ??? 54 81 nc di/dt = 430a/s ??
? IRLB8314PBF 3 2016-08-04 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 2.8v vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 2.8v vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.3v 3.0v bottom 2.8v 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 120a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 68a
? IRLB8314PBF 4 2016-08-04 fig 8. maximum safe operating area fig 10. threshold voltage vs. temperature fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma fig 11. maximum effective transient thermal impedance, junction-to-case 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on)
? IRLB8314PBF 5 2016-08-04 fig 12. typical on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current 2 6 10 14 18 v gs , gate-to-source voltage (v) 0 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 86a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 14a 30a bottom 68a
? IRLB8314PBF 6 2016-08-04 fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 15a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 16a. switching time test circuit fig 17a. gate charge test circuit t p v (br)dss i as fig 15b. unclamped inductive waveforms fig 16b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 17b. gate charge waveform
? IRLB8314PBF 7 2016-08-04 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application.
? IRLB8314PBF 8 2016-08-04 qualification information? qualification level ? industrial (per jedec jesd47f) ? moisture sensitivity level to-220ab n/a rohs compliant yes ? applicable version of jedec standar d at the time of product release. notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.067mh, r g = 50 ? , i as = 68a, v gs =10v. ?? pulse width ? 400s; duty cycle ? 2%.? ?? r ? is measured at t j approximately 90c. ? this value determined from sample failure population, starting t j =25c, l=0.5mh, r g = 50 ? , i as =60a, v gs =10v. ?? calculated continuous current based on maximum allowabl e junction temperature. bond wire current limit is 130a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140). ?
? IRLB8314PBF 9 2016-08-04 trademarks of infineon technologies ag hvic?, ipm?, pfc?, au-convertir?, aurix?, c166?, canpak?, ci pos?, cipurse?, cooldp?, coolgan?, coolir?, coolmos?, coolset?, coolsic?, dave?, di-pol?, directfet?, drbl ade?, easypim?, econobridge?, econodual?, ec onopack?, econopim?, eicedriver?, eupec?, fcos?, ganpowir?, hexfet?, hitfet?, hybridpack?, imotion?, iram?, isofac e?, isopack?, ledrivir?, litix?, mipaq?, modstack?, my-d?, nov alithic?, optiga?, optimos?, origa?, powiraudio?, powi rstage?, primepack?, primestack?, profet?, pro-sil?, rasic?, real3?, smartlewis?, s olid flash?, spoc?, strongirfet?, supirbuck?, tempfe t?, trenchstop?, tricore?, uhvic?, xhp?, xmc? trademarks updated november 2015 other trademarks all referenced product or service names and trademarks are the property of their respective owners. edition 2016-04-19 published by infineon technologies ag 81726 munich, germany ? 2016 infineon technologies ag. all rights reserved. do you have a question about this document? email: erratum@infineon.com document reference ifx1 important notice the information given in th is document shall in no event be regarded as a guarantee of conditions or characteristics (?bescha ff enheitsgarantie?) . with respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer?s products and any use of the product of infineon technologies in customer?s applications. the data contained in th is document is exclusively intended for technically trained sta ff . it is the responsibility of customer?s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies off ice ( www.infineon.com ). please note that this product is not qualified according to the aec q100 or aec q101 documents of the automotive electronics council. warnings due to technical requirements products may contain dangerous substanc es. for information on the types in question please contact your nearest infineon technologies o ff ice. except as otherwise explicitly approved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technologies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 08/04/2016 x changed datasheet with infineon logo - all pages. x corrected package type from ?to-220pak? to ?to-220ab? on page 1 and page 8. x updated figure numbers on page 5 & 6. x added disclaimer on last page.
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