View IRF6216PBF-1_8750541.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet power mosfet notes through are on page 8 so-8 symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance top view 8 1 2 3 4 5 6 7 d d d g s a d s s
v ds -150 v r ds(on) max (@v gs = -10v) 0.24 q g (typical) 33 nc i d (@t a = 25c) -2.2 a features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v -2.2 i d @ t a = 70c continuous drain current, v gs @ 10v -1.9 a i dm pulsed drain current -19 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 7.8 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings form quantity tube/bulk 95 IRF6216PBF-1 tape and reel 4000 irf6216trpbf-1 package type standard pack orderable part number IRF6216PBF-1 so-8 base part number

!

!
parameter min. typ. max. units conditions g fs forward transconductance 2.7 ??? ??? s v ds = -50v, i d = -1.3a q g total gate charge ??? 33 49 i d = -1.3a q gs gate-to-source charge ??? 7.2 11 nc v ds = -120v q gd gate-to-drain ("miller") charge ??? 15 23 v gs = -10v, t d(on) turn-on delay time ??? 18 ??? v dd = -75v t r rise time ??? 15 ??? i d = -1.3a t d(off) turn-off delay time ??? 33 ??? r g = 6.5 t f fall time ??? 26 ??? v gs = -10v c iss input capacitance ??? 1280 ??? v gs = 0v c oss output capacitance ??? 220 ??? v ds = -25v c rss reverse transfer capacitance ??? 53 ??? pf ? = 1.0mhz c oss output capacitance ??? 1290 ??? v gs = 0v, v ds = -1.0v, ? = 1.0mhz c oss output capacitance ??? 99 ??? v gs = 0v, v ds = -120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 220 ??? v gs = 0v, v ds = 0v to -120v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 200 mj i ar avalanche current ??? -4.0 a avalanche characteristics static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -150 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? -0.17 ??? v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.240 v gs = -10v, i d = -1.3a v gs(th) gate threshold voltage -3.0 ??? -5.0 v v ds = v gs , i d = -250 a ??? ??? -25 a v ds = -150v, v gs = 0v ??? ??? -250 v ds = -120v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 na v gs = 20v i gss i dss drain-to-source leakage current parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.6 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time ??? 80 120 ns t j = 25c, i f = -1.3a q rr reverse recoverycharge ??? 310 460 nc di/dt = -100a/ s diode characteristics -2.2 -19 " s d g

!
fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 0.1 1 10 100 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v = -50v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -2.2a

!
fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 1000 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -1.3a v = -30v ds v = -75v ds v = -120v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 -v ds , drain-tosource voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec
#

!
fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 t , case temperature ( c) -i , drain current (a) c d $ $

1

0.1 % $ $ %& + -
'

!
fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 100 200 300 400 500 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom -1.8a -3.2a -4.0a 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -v gs, gate -to -source voltage (v) 0.00 0.50 1.00 1.50 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = -2.2a v gs = -10v 0 2 4 6 8 10 12 14 16 18 0.19 0.20 0.21 0.22 0.23 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as
(

!
so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: this is an irf7101 (mos fet ) f 7101 xxxx international logo rect ifier part number lot code product (optional) dat e code (yww) y = last digit of the year ww = we e k a = as s e mb l y s i t e code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
)

!
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 25mh, r g = 25 , i as = -4.0a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

▲Up To Search▲

Price & Availability of IRF6216PBF-1

	To Download IRF6216PBF-1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .