, fi ne. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 feature s ? hig h gai n a t lo w curren t hp e > 20 0 @ 1 0 /n a ? lo w outpu t capacitanc e c 0 u o <0.8p f ? hp matc h h j ? tigh t vg trackin g a ?v be ,-v b _ ; ? dietectricall y isolate d matche d pair s fo r differentia l amplifiers . absolut e maximu m rating s ? 25" c (unles s otherwis e noted ) maximu m temperature s storag e temperatur e -65 c t o +200 c operatin g junctio n temperatur e +200 c maximu m powe r dissipatio n 2n4o44 , 2n4045 , 2h41oo , 2N4878 , 2n4879 , 2n488 0 dua l monolithi c matche d np n silico n plana r transistor s tou t dittip*lio n i t 25? c c? m t*mc?fltur e dfrtlin g facto r on e sid e 0 3 wi n 1.7mw/ * bot h side s 0. 9 wil t 2,9mvv/' c on e sid e 0. 4 wn t 2.3mw/ c bot h side s 0.7 5 wal l 4.3mw/' c 2n404 4 3n410 0 2n404 6 2n487 8 2n487 9 2n488 o v ca o vf o v rs o ce o ' e com?cio r t o 6? e voltao * cokecto r t o emitte r voltag e emitte r t o ba w voltag e (not e 2 ) collecto r t o collecto r voltag e collecto r curren t 60 v 6 0 v 7 v 100 v 10, , -. a ss v 55 v 7 v 100v 10m a 45 v 45 v 7 v 10 0 v 10m a ~ f i 8as pi n configuratio n to-7 1 to-7 8 *" ?, % c ' chi p topograph y 400 0 ? l|| h -collecto r ^ 1 ? ?* -collecto s -1 jm m fjql o ms sl> , j " 2ploce s oss ' o m b ) w ^ rvp . 2 place s .woo n , a / v "iwltte r = 7 ""? " i- 1 \r ! haci s jbi l ? vrjjitttr , ? -?? ? orderin g informatio n to-7 b 2n404 4 2n404 5 2n410 0 to-7 1 wafe r 0 1 2n4044/ w 2n4 c 2n404s/ w 2n4 c 2n4100/ w 2n4 1 2n487 8 2n487 9 2n488 0 c e w4/ d m5/ d 00/ d electrica l characteristic s (25 c unles s otherwis e noted ) paramete r hp| = d c curren t gai n hpc j d c curren t cai n rtfe(-55c ) d c curren t gai n vbeion ) emitter-base o n voltag e v ce(sat ) collecto r saturatio n voltag e icb o collecto r cutof f curren t icboi+iso'c ) collecto r cutof f curren t |b o emitte r cutof f curren t c 0 b o outpu t capacitanc e 2n404 4 2n487 8 mi n 20 0 22 s 7 5 ma x 60 0 0. 7 0.3 s 0. 1 0. 1 0. 1 0. 8 2n410 0 2n487 9 mi n 15 0 17 5 5 0 ma x 60 0 0. 7 0.3 5 0. 1 0. 1 0. 1 0. 8 2n404 5 2n488 0 mi n 8 0 10 0 3 0 ma x 80 0 0. 7 0.3 5 0, 1 0. 1 0. 1 0. 8 uni t v v n a *| a n a p f tes t condition s i c = 10//a . v c e = 5 v 1c " 1.0ma , vce ^ 5 v ic = lofia , v c e = 5 v l c = 10/ia . v c e = 5 v 1c ' 1.0ma , i b = 0. 1 m a ie-o , vc b = *5v,30 v le-o.v c b = 45v,30 v ic"0 . ve b = s v i e = o , vc b = s v n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y errors o r omission s discovere d i n it s use . n j semi-conductor s encourage s customers t o verif y tha t datasheets ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
electrica l characteristic s (2 5 * c unles s otherwis e noted ) paramete r emitte r transitio n c t e capacitanc e collecto r t o collecto r c ci , c 2 capacitanc e collecto r t o collecto r 'ci,c 2 leakag e curren t collecto r t o emitte r v ceo(sust ) sustainin g voltag s curren t gai n bandwidt h ' t produc t curren t gai n bandwidt h ! t produc t n f narro w ban d nois e figur e collecto r bas e breakdow n bvce o voltag e emitte r bas e breakdow n bveb o voltag e 2n404 4 2n487 8 mi n 6 0 20 0 2 0 6 0 7 ma x 1 0. 8 s 2 2n410 0 2n4b7 9 mi n 5 5 15 0 1 5 5 5 7 ma x 1 0. 8 s 3 2n404 6 2n488 0 mi n 4 5 15 0 1 5 4 5 7 ma x 1 0. 8 s 3 uni t p f p f p a v mh z mh z d b v v tes t condition s > c = . v e b = o.s v v c c - o v c c = too v l c ? 1ma , i b = 0 i c = 1ma , vc e ? 10 v i c - io(ia , vc e * io v l c m 10,ia , vc e = 5 v f = 1km z r a = 10kohm ? bw=200h z i c ~ lojia , i e * o i e = io/ia . i c = o matchin g characteristic s (2 5 * c unles s otherwis e noted ) h ? /h ? curren t gai n rati o hre l' hre 2 (not e 3 ) bas e emitte r voltag e ' v ber v be 2 l differentia l | , , | bas e curren t ^ ^ differentia l bas e curren t i a (vbe 1 -vbe 2 >i / ' c differentia l voltag e differentia l chang e wit h temperatur e chang e wit h temperatur e 3. 9 1 3 5 3 0. 3 0.8 5 s 1 0 5 0. 5 0 3 1 5 2 5 1 0 1 m v n a jtv/' c na/' c l c = 10* a t o 1ma , l c - toiia, vc e = 5 v i c = 10xa , vc e = 5 v t a * -55- c t o -i-125' c vc e - 5 v t a = -s5- c t o +12s' c smal l signa l characteristic s paramete r hit , inpu t resistanc e hr b voltag e feedbac k rati o h( . smal l signa l curren t gai n ita , outpu t conductanc e h| e inpu t resistanc e h r ( voltag e feedbac k rati o ho . outpu t conductanc e typica l un| t valu e un ' t 2 8 ohm s 4. 3 x 10- ? 29 0 0. 6 x 1 0 - 7 mho s 9. 6 k ohm s 4. 2 x 10- * 1 2 jimho s tes t condition s l c = 1ma , v c b 5 v l c ? 1ma , vc b 5 v l c = 1ma , vc b 5 v l c = 1ma , vc b 5 v l c = 1ma , vc b 5 v ""' " i? - ima . vc b 5 v l c - 1ma , vc b - 5 v notes : 1 , thes e rating s ar e limitin g value * abov e whic h th e serviceabllt y o f an y semiconducto r devic e ma y b e impaired . 2 . th e revers e base-tc-ente r voltag e mus t neve r excee d 7, 0 volt s an d th e revers e base-lc-emme r curran t mus t neve r excee d 1 0 yamps . 3 . th e lowes t o f tw o h f e reading s i s take n a s h fc | fo r purpose s o f thi s ratio . downloaded from: http:///
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