all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 8 rev. 02.1, 2016-06-10 ptfb181702fc thermally-enhanced high power rf ldmos fet 170 w, 28 v, 1805 C 1880 mhz description the ptfb181702fc is a 170-watt ldmos fet intended for use in multi-standard cellular power amplifer applications. features include input and output matching, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptfb181702fc package h-37248-4 features ? broadband internal matching ? typical cw performance, 1842 mhz, 28 v - output power at p 1db = 180 w - effciency = 58% - gain = 18.5 db ? capable of handling 10:1 vswr @28 v, 170 w (cw) output power ? integrated esd protection ? low thermal resistance ? pb-free and rohs compliant rf characteristics two-carrier wcdma specifcations (tested in infneon test fxture) v dd = 28 v, i dq = 1300 ma, p out = 30 w avg, ? 1 = 1870 mhz, ? 2 = 1880 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit linear gain g ps 18 19 db drain effciency h d 24 26 % intermodulation distortion imd C35 C33 dbc 0 10 20 30 40 50 15 16 17 18 19 20 34 36 38 40 42 44 46 48 50 52 efficiency (%) gain (db) average output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1.3 a, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 1805 mhz 1842.5 mhz 1880 mhz gain efficiency b181702fc - gc
data sheet 2 of 8 rev. 02.1, 2016-06-10 ptfb181702fc dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.11 w operating gate voltage v ds = 28 v, i dq = 650 ma v gs 2.5 3.0 3.5 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v junction temperature t j 200 c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70c, 170 w cw) r qjc 0.27 c/w ordering information type and version order code package description shipping ptfb181702fc v1 r0 PTFB181702FCV1R0xtma1 h-37248-4, earless fange tape & reel, 50 pcs ptfb181702fc v1 r250 ptfb181702fcv1r250xtma1 h-37248-4, earless fange tape & reel, 250 pcs
ptfb181702fc data sheet 3 of 8 rev. 02.1, 2016-06-10 typical performance (data taken in a production test fxture) - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 16 - 14 - 12 - 10 - 8 - 6 - 4 1690 1730 1770 1810 1850 1890 1930 1970 acpr (dbc) return loss (db) frequency (mhz) single - carrier broadband performance v dd = 28 v, i dq = 1.3 a, p out = 80 w, 3gpp wcdma signal, par = 10 db return loss acpr b181702fc - g3 42 43 44 45 46 47 48 15 16 17 18 19 20 21 1690 1730 1770 1810 1850 1890 1930 1970 efficiency (%) gain (db) frequency (mhz) single - carrier broadband performance v dd = 28 v, i dq = 1.3 a, p out = 80 w, 3gpp wcdma signal, par = 10 db gain efficiency b181702fc - g2 - 80 - 70 - 60 - 50 - 40 - 30 - 20 38 41 43 46 48 51 53 imd (dbc) output power, pep (dbm) two - tone intermodulation distortion vs. output power v dd = 28 v, i dq = 1.3 a, ? 1 = 1880 mhz, ? 2 = 1879 mhz im3 im7 im5 b181702fc - g5 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 34 36 38 40 42 44 46 48 50 52 imd (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1.3 a, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 1880 lower 1880 upper 1842.5 lower 1842.5 upper 1805 lower 1805 upper b181702fc - g1
data sheet 4 of 8 rev. 02.1, 2016-06-10 ptfb181702fc typical performance (cont.) broadband circuit impedance frequency z source w z load w mhz r jx r jx 1805 2.99 C6.14 1.87 C4.46 1825 2.99 C6.08 1.52 C4.50 1845 3.00 C6.03 1.35 C4.34 1865 3.00 C5.97 1.25 C4.19 1880 3.00 C5.94 1.20 C4.08 17.5 18.0 18.5 19.0 19.5 20.0 20.5 37 39 41 43 45 47 49 51 53 power gain (db) output power (dbm) cw gain vs. output power v dd = 28 v, ? = 1880 mhz i dq = 1.6 a i dq = 1.3 a i dq = 1.0 a b181702fc - g6 0 10 20 30 40 50 60 15 16 17 18 19 20 21 37 39 41 43 45 47 49 51 53 drain efficiency (%) gain (db) output power (dbm) cw gain & efficiency vs. output power v dd = 28 v, i dq = 1.3 a, ? = 1880 mhz - 10 c +25 c +85 c gain b181702fc - g4 z source z loa d s g1 g2 d1 d2
ptfb181702fc data sheet 5 of 8 rev. 02.1, 2016-06-10 reference circuit reference circuit assembly diagram (not to scale)* ptfb181702f_in_02 rf_out ptfb181702f_out_01 rf _in ro 4350 , .020 (60) ro4350 , .020 (60) b 1 8 1 7 0 2 f c _ c d _ 1 0 - 1 8 - 2 0 1 2 c 201 c 202 c209 c210 c 211 c203 c 206 c204 c 207 c102 r 803 r 802 r 801 r 102 c 801 c802 c803 c101 c 103 c104 c105 c 106 c107 r 101 + c804 l101 l102 r 804 s 1 s 3 s 2 c205 c208 v dd v dd v g2 v dd v g1
data sheet 6 of 8 rev. 02.1, 2016-06-10 ptfb181702fc reference circuit (cont.) reference circuit assembly dut ptfb181702fc test fixture part no. ltn/ptfb181702fc pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66 find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description suggested supplier p/n input c101, c102 capacitor, 10 f digi-key 490-4393-2-nd c103, c104 capacitor, 18 pf atc atc800a180jt250xt c105 capacitor, 1.5 pf atc atc800a1r5bt250xt c106, c107 emi suppression capacitor digi-key nfm18ps105r0j3d-nd c801, c804 capacitor, 10 f digi-key 587-1818-2-nd c802 chip capacitor, 1000 pf digi-key pcc1772ct-nd c803 capacitor, 1 f digi-key 490-4736-2-nd l101, l102 inductor, 27.3 nh coilcraft 0908sq-27nglb r101, r102, r803 resistor, 10 ohm digi-key p10gtr-nd r801 resistor, 100 ohm digi-key p100gtr-nd r802 resistor, 1300 ohm digi-key p1.3kgtr-nd r804 resistor, 1200 ohm digi-key p1.2kgtr-nd s1 potentiometer, 2k w digi-key 3224w-202ect-nd s2 transistor digi-key bcp56-nd s3 voltage regulator digi-key lm7805 output c201, c211 chip capacitor, 1.2 pf atc atc800a1r2bt250xt c202, c203, c204 chip capacitor, 18 pf atc atc800a180jt250xt c205, c208 capacitor, 220 f digi-key pce4444tr-nd c206, c207, c209, c210 capacitor, 10 f digi-key 587-1818-2-nd pinout diagram (top view) lead connections for ptfb181702fc h - 37248 - 4 _pd _10 - 10 - 2012 s d1 d2 g1 g2 pin description d1 drain device 1 d2 drain device 2 g1 gate device 1 g2 gate device 2 s source (fange)
ptfb181702fc data sheet 7 of 8 rev. 02.1, 2016-06-10 package outline specifcations package h-37248-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a -
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