page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures complementary to a733 marking : c r maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 6 0 v col l ector - emitter v o l t age v ce o 50 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 1 5 0 m a col l ector p o w e r dissi p a t i on p c 0. 4 w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) p a r a m e t e r s y mbol t es t con diti o ns m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c =1ma , i e =0 60 v collector - emitter bre a kd o w n v ol t age v ceo i c =100ua , i b =0 50 v emitter - b a s e breakd o w n v o l t age v ebo i e =100ma, i c =0 5 v collector cut - off current i cb o v cb =60 v , i e =0 0.1 ua collector cut - off current i ce o v ce =45v 0.1 ua emitter cut - off current i eb o v eb = 5 v , i c =0 0.1 ua dc cur r ent g a in h fe(1) v ce =6 v , i c =1ma 70 700 h fe(2) v ce =6 v , i c =0.1ma 40 collector - emitter satu r ation v o l t age v ce(sat) i c =100ma, i b =10ma 0.3 v ba s e - emitt e r saturation v ol t age v be(sat) i c =100ma, i b =10ma 1 v t r a n s ition fr e qu e n c y f t v ce = 6 v ,i c =10ma,f =30 mhz 200 mhz collector output ca p aci t a nce cob v cb =10 v ,i e = 0 , f = 1 mh z 3.0 pf noise figure nf v ce = 6 v , i c =0. 1 ma r g =10 k ? ,f=1 k mh z 10 db class ification of h fe rank o y gr bl r a nge 70 - 1 40 120 - 240 200 - 400 350 - 700 ( n p n ) 1. base 2. emitter sot - 23 3. collecto C945
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteristics C945
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