10 sec steady state v ds v gs 10.5 7.7 8.5 6.2 i dm 3.1 1.7 2.0 1.1 i ar e ar t j , t stg symbol typ max t 10s 31 40 steady-state 59 75 steady-state r q jl 16 24 maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient af r q ja c/w c/w maximum junction-to-ambient a gate-source voltage absolute maximum ratings t a =25c unless otherwise noted vv 20 drain-source voltage p d pulsed drain current b power dissipation t a =25c avalanche current b 13 parameter junction and storage temperature range continuous drain current af maximum t a =25c t a =70c 30 units symbol a parameter c -55 to 150 t a =70c i d a repetitive avalanche energy 0.3mh b 25 mj w 80 AO4724 30v n-channel mosfet product summary v ds (v) = 30v i d = 10.5a (v gs = 10v) r ds(on) < 17.5m w (v gs = 10v) r ds(on) < 29 m w (v gs = 4.5v) 100% uis tested 100% rg tested general description srfet tm the AO4724 uses advanced trench technology with a monolithically integrated schottk y diode to provide excellent r ds(on) ,and low gate charge. this device is suitable for use as a low side fet in smps, load switching and general purpose applications. srfet tm soic-8 top view bottom view d d d d s s s g g ds srfet tm s oft r ecovery mos fet : integrated schottky diode alpha & omega semiconductor, ltd. www.aosmd.com
AO4724 symbol min typ max units bv dss 30 v 0.1 t j =55c 20 i gss 100 na v gs(th) 1.3 1.64 2 v i d(on) 80 a 14.4 17.5 t j =125c 21.5 25.8 22.7 29.0 m w g fs 23 s v sd 0.4 0.5 v i s 4.8 a c iss 696 900 pf c oss 199 pf c rss 81 pf r g 1.2 1.8 w q g (10v) 12.4 16 nc q g (4.5v) 6.1 8 nc q gs 2.04 nc q gd 2.7 nc t d(on) 2.6 ns t r 6.8 ns t d(off) 17 ns t f 3.6 ns t rr 20.2 26 ns q rr 7.9 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time body diode reverse recovery charge i f =10.5a, di/dt=300a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =10.5a reverse transfer capacitance i f =10.5a, di/dt=300a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ma gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =8a i s =1a,v gs =0v v ds =5v, i d =10.5a total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.43 w , r gen =3 w turn-off fall time maximum body-diode + schottky continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =10.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev2: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4724 typical electrical and thermal characteristics 800 140 220 80 140 0.5 15 7 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice 0 20 40 60 80 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 6v 8v 5v 0 6 12 18 24 30 0 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics i d (a) 10 14 18 22 26 30 0 6 12 18 24 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 6 14 22 30 38 46 54 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =10.5a 25c 125c i d =10.5a alpha & omega semiconductor, ltd. www.aosmd.com
AO4724 typical electrical and thermal characteristics 800 140 220 80 140 0.5 15 7 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice 0 2 4 6 8 10 0 3 6 9 12 15 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =10.5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
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