61312 tkim/n0409pa tkim tc-00002145 no. a1597-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 atp106 p-channel power mosfet ? 40v, ? 30a, 25m , single atpak stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. 1 : gate 2 : drain 3 : source 4 : drain atpak 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 features ? low on-resistance ? large current ? slim package ? 4.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --40 v gate-to-source voltage v gss 20 v drain current (dc) i d --30 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% --90 a allowable power dissipation p d tc=25 c40w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 30 mj avalanche current *2 i av --15 a note : * 1 v dd =--10v, l=200 h, i av =--15a * 2 l 200 h, single pulse package dimensions unit : mm (typ) 7057-001 ordering number : ena1597a ATP106-TL-H product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl atp106 lot no. 1 3 4,2
atp106 no. a1597-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --40 v zero-gate voltage drain current i dss v ds = -- 40v, v gs =0v -- 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --1.5 --2.6 v forward transfer admittance | yfs | v ds = -- 10v, i d = --15 a 28 s static drain-to-source on-state resistance r ds (on)1 i d = -- 15a, v gs = -- 10v 19 25 m r ds (on)2 i d = -- 8a, v gs = -- 4.5v 29 41 m input capacitance ciss v ds =--20v, f=1mhz 1380 pf output capacitance coss 210 pf reverse transfer capacitance crss 150 pf turn-on delay time t d (on) see speci ed test circuit. 12 ns rise time t r 120 ns turn-off delay time t d (off) 110 ns fall time t f 90 ns total gate charge qg v ds =--20v, v gs =--10v, i d =--30a 29 nc gate-to-source charge qgs 6.4 nc gate-to-drain ?miller? charge qgd 5.9 nc diode forward voltage v sd i s =--30a, v gs =0v --0.97 --1.5 v switching time test circuit ordering information device package shipping memo ATP106-TL-H atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --15a r l =1.33 v dd = --20v v out v in 0v --10v v in atp106
atp106 no. a1597-3/7 | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs i s -- v sd sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds it15125 it15122 --50 --25 150 0 --40 --10 --15 --30 --35 --20 --25 -- 5 1000 100 2 it15129 it15127 --1.4 --1.2 --1.0 --0.6 --0.4 --0.8 --0.2 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 --0.1 --1.0 --10 --100 --0.1 --1.0 23 57 2 --10 357 57 23 0 25 50 75 100 125 3 5 5 7 7 3 2 75 c 25 c tc= --25 c - -25 c tc=75 c tc=75 c 25 c --25 c ciss crss it15128 10 100 2 3 5 7 7 1000 2 3 5 7 t d (off) v dd = --20v v gs = --10v t r --0.4 --0.2 --0.6 --0.8 --1.0 --2.0 --1.6 --1.2 --1.4 --1.8 0 0 -- 5 --10 --35 --25 --30 --15 --20 0 -- 5 --10 --15 --50 --25 --20 --30 --35 --45 --40 0 it15124 -- 3 0 --5 --7 --9 --11 --16 --13 --15 -- 2 --1 --4 --6 --8 --10 --12 --14 5 10 60 50 45 40 30 25 20 15 35 55 5 10 60 50 45 40 30 25 20 15 35 55 it15123 --0.5 --1.5 --2.0 --1.0 --2.5 --4.0 --5.0 --4.5 --3.5 --3.0 0 --4.0v v gs = --3.0v --16.0v t f 25 c v gs = --4.5v, i d = --8a v gs = - -10v, i d = --15a --8.0v coss t d (on) --4.5v --6.0v --10.0v i d = --8a --15a --3.5v v ds = --10v single pulse it15126 --0.1 --1.0 23 57 3 5 7 7 2 10 1.0 5 7 3 2 2 --10 357 57 23 tc= --25 c 25 c 75 c v ds = --10v single pulse f=1mhz tc=25 c single pulse tc=25 c single pulse single pulse v gs =0v single pulse
atp106 no. a1597-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it15133 a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it15131 it15130 0 5 10 15 25 20 30 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --20v i d = --30a it15132 --0.1 --1.0 2 3 5 7 2 3 5 7 2 3 5 2 7 --10 --0.1 i dp = --90a i d = --30a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). --1.0 23 57 2 --10 357 23 7 5 10 s --100 0 0 20 40 60 80 100 140 120 40 35 25 20 30 10 15 5 45 160 pw 10 s tc=25 c single pulse
atp106 no. a1597-5/7 taping speci cation ATP106-TL-H
atp106 no. a1597-6/7 outline drawing land pattern example ATP106-TL-H mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
atp106 ps no. a1597-7/7 note on usage : since the atp106 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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