doc.# dsfp-dn3545 c070113 dn3545 features ? high input impedance ? low input capacitance ? fast switching speeds ? low on-resistance ? free from secondary breakdown ? low input and output leakage applications ? normally-on switches ? solid state relays ? converters ? linear amplifers ? constant current sources ? power supply circuits ? telecom general description thes e depletion-mode (normally-on) transistors utilize an advanced vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffcient inherent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. absolute maximum ratings parameter value drain-to-source voltage bv dsx drain-to-gate voltage bv dgx gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. n-channel depletion-mode vertical dmos fet product marking yy = year sealed ww = week sealed = ?green? packaging sidn 3545 yyww dn5mw w = code for week sealed = ?green? packaging to-92 to-243aa (sot-89) gate source drain gate source drain drain to-92 to-243aa (sot-89) pin confguration package may or may not include the following marks: si or package may or may not include the following marks: si or -g denotes a lead (pb)-free / rohs compliant package. contact factory for wafer / die availablity. devices in wafer / die form are lead (pb)-free / rohs compliant. refer to p0xx tape & reel specs for p002, p003, p005, p013, and p014 to-92 taping specifcations and winding styles part number package options packing sn3545n3-g to-92 1000/bag sn3545n3-g p002 to-92 2000/reel sn3545n3-g p003 to-92 2000/reel sn3545n3-g p005 to-92 2000/reel sn3545n3-g p013 to-92 2000/reel sn3545n3-g p014 to-92 2000/reel sn3545n8-g to-243aa (sot-89) 2000/reel ordering information product summary bv dsx /bv dgx r ds(on) (max) i dss (min) 450v 20 200ma package ja to-92 132 o c/w to-243aa (sot-89) 133 o c/w typical thermal resistance supertex inc. supertex inc. www .supertex.com
2 doc.# dsfp-dn3545 c070113 dn3545 notes: ? i d (continuous) is limited by max rated t j . ? mounted on fr4 board, 25mm x 25mm x 1.57mm. switching waveforms and test circuit thermal characteristics package i d (continuous) ? i d (pulsed) power dissipation @t a = 25 o c i dr ? i drm t0-92 (d-pak) 136ma 1600ma 0.74w 136ma 1600ma to-243aa 200ma 300ma 1.6w ? 200ma 300ma electrical characteristics (t a = 25 o c unless otherwise specifed) sym parameter min typ max units conditions bv dsx drain-to-source breakdown voltage 450 - - v v gs = -5.0v, i d = 100a v gs(off) gate-to-source off voltage -1.5 - -3.5 v v ds = 25v, i d = 10a v gs(off) change in v gs(off) with temperature - - -4.5 mv/ o c v ds = 25v, i d = 10a i gss gate body leakage current - - 100 na v gs = 20v, v ds = 0v i d(off) drain-to-source leakage current - - 1.0 a v gs = -5.0v, v ds = max rating - - 1.0 ma v gs = -5.0v, v ds = 0.8max rating t a = 125c i dss saturated drain-to-source current 200 - - ma v gs = 0v, v ds = 15v r ds(on) static drain-to-source on-state resistance - - 20 v gs = 0v, i d = 150ma r ds(on) change in r ds(on) with temperature - - 1.1 %/ o c v gs = 0v, i d = 150ma g fs forward transductance 150 - - mmho i d = 100ma, v ds = 10v c iss input capacitance - - 360 pf v gs = -5.0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - - 40 c rss reverse transfer capacitance - - 15 t d(on) turn-on delay time - - 20 ns v dd = 25v, i d = 150ma, r gen = 25,v gs = 0v to -10v t r rise time - - 30 t d(off) turn-off delay time - - 30 t f fall time - - 40 v sd diode forward voltage drop - - 1.8 v v gs = -5.0v, i sd = 150ma t rr reverse recovery time - 800 - ns v gs = -5.0v, i sd = 150ma notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. 90% 10% 90% 90% 10% 10% pulse generator vdd r l output d.u.t. t (on) t d(on) t (off) t d(off) t r input input output 0v vdd r gen 0v -10v t f supertex inc. www .supertex.com
3 doc.# dsfp-dn3545 c070113 dn3545 typical performance curves i d (amperes) v ds (volts) v gs = +2.0v output characteristics -0.5v -0.8v -1.0v -1.5v saturation characteristics i d (amperes) v ds (volts) v gs = +2v +1.0v 0v -0.5v -0.8v -1.0v g fs (siemens) i d (amperes) t ransconductance vs. drain current power dissipation vs. ambient t emperature p d (watts) t a ( o c) 0v -1.5v 0 50 100 150 200 250 300 350 400 450 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.0v 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0 0.2 0.4 0.6 0.8 v ds = 10v t a = -55 o c t a = 25 o c t a = 125 o c 0 25 50 75 100 125 150 0 0.5 1.0 1.5 2.0 to -243aa to -92 maximum rated safe operating area i d (amperes) v ds (volts) 1 1000 100 10 to -243aa (pulsed) t a = 25 o c 0.001 0.01 0.1 1.0 to - 243aa (dc) to - 92 (dc) to - 92 (pulsed) thermal response characteristics thermal resistance (normalized) t p (seconds) 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1 to - 243aa ta = 25 o c pd = 1.6w to -92 t c = 25 o c p d = 1.0w supertex inc. www .supertex.com
4 doc.# dsfp-dn3545 c070113 dn3545 typical performance curves (cont.) r ds(on) (ohms) i d (amperes) on resistance vs. drain current v gs(off) and r ds(on) w/ t emperature v gs(off) (normalized) t j ( o c) r ds(on) (normalized) t ransfer characteristic s i d (amperes) v gs (v olts) v gs (volts) -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 i d = 100a v gs = -5.0v -3 -2 -1 0 1 2 0 0.2 0.4 0.6 0.8 1.0 v ds = 10v t a = -55 o c t a = 125 o c t a = 25 o c 0.5 0.7 0.9 1.1 1.3 1.5 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 r ds(on) @ 0v , 150ma v gs(off) @ 10a 0 10 20 30 40 0 50 100 150 200 250 300 c rss c oss c iss v gs = -5.0v 0 1 2 3 4 5 6 -5 -4 -3 -2 -1 0 1 2 3 bv dss (normalized) t j ( o c) bv dss v ariation with t emperatur e capacitance vs. drain source v oltage c (picofarads) v ds (v olts) 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 gate drive dynamic characteristics q g (nanocoulombs) v gs = 0v i d = 150ma v ds = 30v supertex inc. www .supertex.com
5 doc.# dsfp-dn3545 c070113 dn3545 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not specifed in the jedec drawing. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to92n3, version e041009. seating plane 1 2 3 front v iew side v iew bottom v iew e1 e d e1 l e c 1 2 3 b a supertex inc. www .supertex.com
6 dn3545 (the package drawing(s) in this data sheet may not refect the most current specifcations. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-dn3545 c070113 3-lead to-243aa (sot-89) package outline (n8) symbol a b b1 c d d1 e e1 e e1 h l dimensions (mm) min 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 ? 1.50 bsc 3.00 bsc 3.94 0.73 ? nom - - - - - - - - - - max 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20 jedec registration to-243, variation aa, issue c, july 1986. ? this dimension differs from the jedec drawing drawings not to scale . supertex doc. #: dspd-3to243aan8, version f111010. b b1 d d1 e h e1 c a 1 2 3 e e1 t op vi ew side v iew l supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc. does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. (website: http//www .supertex.com) ?2013 supertex inc. all rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
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