? 2014 ixys corporation, all rights reserved xpt tm 650v igbt genx3 tm w/ diode ixyk100n65b3d1 IXYX100N65B3D1 v ces = 650v i c110 = 100a v ce(sat) ??? ??? ??? ??? ??? 1.85v t fi(typ) = 73ns symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 225 a i lrms terminal current limit 160 a i c110 t c = 110c 100 a i f110 t c = 110c 67 a i cm t c = 25c, 1ms 460 a i a t c = 25c 50 a e as t c = 25c 600 mj ssoa v ge = 15v, t vj = 150c, r g = 3 ? i cm = 200 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 10 ? , non repetitive p c t c = 25c 830 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in f c mounting force (plus247) 20..120 /4.5..27 n/lb weight to-264 10 g plus247 6 g ds100633(10/14) extreme light punch through igbt for 10-30khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 650 v v ge(th) i c = 250 a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 150c 3 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 70a, v ge = 15v, note 1 1.53 1.85 v t j = 150c 1.77 v features ? international standard packages ? optimized for 10-30khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? anti-parallel ultra fast diode ? high current handling capability advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts g = gate e = emitter c = collector tab = collector to-264 (ixyk) e g c plus247 (ixyx) g tab tab e c g advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixyk100n65b3d1 IXYX100N65B3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 30 55 s c ies 4740 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 470 pf c res 103 pf q g(on) 168 nc q ge i c = 100a, v ge = 15v, v ce = 0.5 ? v ces 30 nc q gc 78 nc t d(on) 29 ns t ri 37 ns e on 1.27 mj t d(off) 150 ns t fi 73 ns e off 1.37 2.00 mj t d(on) 28 ns t ri 37 ns e on 2.35 mj t d(off) 198 ns t fi 160 ns e off 2.16 mj r thjc 0.18 c/w r thcs 0.15 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 50a, v ge = 15v v ce = 400v, r g = 3 ? note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 100a, v ge = 0v, note 1 1.7 2.7 v ??? t j = 150 ? c ?????????????? 1.4 v i rm 45 a t rr 156 ns r thjc 0.36 ? c/w i f = 100a, v ge = 0v, t j = 150 ? c, -d i f /dt = 700a/ ? s ?? v r = 400v inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 400v, r g = 3 ? note 2 to-264 outline terminals: 1 = gate 2,4 = collector 3 = emitter terminals: 1 - gate 2 - collector 3 - emitter plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2014 ixys corporation, all rights reserved ixyk100n65b3d1 IXYX100N65B3D1 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 0.5 1 1.5 2 2.5 3 v ce - volts i c (a) v ge = 15v 13v 12v 11v 10v 9v 7v 8v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 024681012141618 v ce - volts i c (a) v ge = 15v 13v 10v 11v 8v 9v 7v 12v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c (a) v ge = 15v 13v 12v 11v 10v 8v 9v 7v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 70a i c = 35a i c = 140a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 101112131415 v ge (v) v ce (v) i c = 140a t j = 25oc 70a 35a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 45678910 v ge (v) i c (a) t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixyk100n65b3d1 IXYX100N65B3D1 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 20406080100120140160 i c (a) g f s (s) t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 100 200 300 400 500 600 700 v ce (v) i c (a) t j = 150oc r g = 3 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g (nc) v ge (v) v ce = 325v i c = 70a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce (v) capacitance (pf ) f = 1 mh z c ies c oes c res fig. 12. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width (s) z (th)jc - oc / w fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds (v) i d (a) t j = 175oc t c = 25oc single pulse 25s 1ms dc v ce(sat) limi t 100s 10ms
? 2014 ixys corporation, all rights reserved ixyk100n65b3d1 IXYX100N65B3D1 fig. 13. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 3 6 9 1215182124273033 r g ( ? ) e off (mj) 0 2 4 6 8 10 12 14 e on (mj) e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 80 100 120 140 160 180 200 220 240 3 6 9 1215182124273033 r g ( ? ) t f i (ns) 0 100 200 300 400 500 600 700 800 t d(off) (ns) t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 50 55 60 65 70 75 80 85 90 95 100 i c (a) e off (mj) 0 1 2 3 4 5 6 7 e on (mj) e off e on - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 t j (oc) e off (mj) 0 1 2 3 4 5 6 7 e on (mj) e off e on - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 40 60 80 100 120 140 160 180 200 220 50 55 60 65 70 75 80 85 90 95 100 i c (a) t f i (ns) 120 130 140 150 160 170 180 190 200 210 t d(off) (ns) t f i t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 180 200 220 25 50 75 100 125 150 t j (oc) t f i (ns) 120 130 140 150 160 170 180 190 200 210 220 t d(off) (ns) t f i t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. ixyk100n65b3d1 IXYX100N65B3D1 fig. 20. inductive turn-on switching times vs. collector current 20 40 60 80 100 120 140 50 55 60 65 70 75 80 85 90 95 100 i c (a) t r i (ns) 26 28 30 32 34 36 38 t d(on) (ns) t r i t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j (oc) t r i (ns) 24 26 28 30 32 34 36 38 40 t d(on) (ns) t r i t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 3 6 9 1215182124273033 r g ( ? ) t r i (ns) 0 30 60 90 120 150 180 t d(on) (ns) t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 22. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 90 100 10 100 1,000 f max (kh) i c (a) t j = 150oc t c = 75oc v ce = 400v v ge = 15v r g = 3 ? d = 0.5 square wave triangular wave
? 2014 ixys corporation, all rights reserved ixys ref: ixy_100n65b3(7d-y42) 10-14-14 ixyk100n65b3d1 IXYX100N65B3D1 fig. 23. diode forward characteristics 0 20 40 60 80 100 120 140 160 180 200 00.511.522.53 v f (v) i f (a) t j = 150oc t j = 25oc fig. 24. reverse recovery charge vs. -di f /dt 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 200 300 400 500 600 700 800 900 1000 -di f / dt (a/s) q rr (c) 50a 75a i f = 100a t j = 150oc v r = 400v fig. 25. reverse recovery current vs. -di f /dt 15 20 25 30 35 40 45 50 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) i rr (a) i f = 100a 50a 75a t j = 150oc v r = 400v fig. 26. reverse recovery time vs. -di f /dt 130 140 150 160 170 180 190 200 210 200 300 400 500 600 700 800 900 1000 -di f /dt (a/s) t rr (ns) i f = 100a 75a 50a t j = 150oc v r = 400v fig. 28. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) z (th)jc (oc / w) fig. 27. dynamic parameters q rr, i rr vs. junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 100a -di f /dt = 700a/s
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