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02/09/12 irlml9301trpbf hexfet power mosfet www.irf.com 1 ordering information: see detailed ordering and shipping information on the last page of this data sheet. notes through are on page 10 micro3 tm (sot-23) irlml9301trpbf features and benefits features benefits s g 1 2 d 3 application(s) ?
v ds -30 v v gs max 20 v r ds(on) max (@v gs = -10v) 64 m r ds(on) max (@v gs = -4.5v) 103 m symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 c/w a max. -3.6 -2.9 -55 to + 150 20 0.01 -30 1.3 0.8 -15 w low r ds(on) ( ? 1 10

2 www.irf.com g d s electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -30 ??? ??? v . 0.0 1 10 1. . 1 10 100 100 1 gfs forward transconductance 5.0 ??? ??? s q g total gate charge ??? 4.8 ??? q gs gate-to-source charge ??? 1.2 ??? q gd gate-to-drain ("miller") charge ??? 2.5 ??? t d(on) turn-on delay time ??? 9.6 ??? t r rise time ??? 19 ??? t d(off) turn-off delay time ??? 16 ??? t f fall time ??? 15 ??? c iss input capacitance ??? 388 ??? c oss output capacitance ??? 93 ??? c rss reverse transfer capacitance ??? 65 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 14 21 ns q rr reverse recovery charge ??? 7.2 11 nc ??? ??? ??? ??? pf a -1.3 -15 v dd =-15v na nc ns v ds = v gs , i d = -10 a v ds =-24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c r ds(on) v gs = -4.5v, i d = -2.9a static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -3.6a mosfet symbol showing the v ds =-15v conditions v gs = -4.5v v gs = 0v v ds = -25v ? = 1.0khz r g = 6.8 v gs = -4.5v di/dt = 100a/ s v gs = -20v v gs = 20v t j = 25c, i s = -1.3a, v gs = 0v integral reverse p-n junction diode. v ds = -10v, i d =-3.6a i d = -3.6a i d = -1a t j = 25c, v r = -24v, i f =-1.3a

www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.1 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -3.6a v gs = -10v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v bottom -2.5v 60 s p ulse width tj = 25c -2.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v bottom -2.5v 60 s p ulse width tj = 150c -2.5v 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60 s pulse width

4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681012 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v vds= -6v i d = -3.6a 0.3 0.5 0.7 0.9 1.1 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 1msec 10msec

www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10b. switching time waveforms 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 25 50 75 100 125 150 t a , ambient temperature (c) 0 0.6 1.2 1.8 2.4 3 3.6 4.2 - i d , d r a i n c u r r e n t ( a )

1

0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit

6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. gate charge waveform 0 5 10 15 20 25 30 35 -i d , drain current (a) 0 100 200 300 400 500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = -10v vgs = -4.5v 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 20 60 100 140 180 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -3.6a t j = 25c t j = 125c vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s

www.irf.com 7 fig 15. typical threshold voltage vs. junction temperature typical power vs. time 1e-005 0.0001 0.001 0.01 0.1 1 10 time (sec) 0 20 40 60 80 100 p o w e r ( w ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -10ua id = -25ua i d = -250ua

8 www.irf.com micro3 (sot-23/to-236ab) part marking information

! e e1 e d a b 0.15 [0.006] e1 1 2 3 m cba 5 6 6 5 notes: b a1 3x a a2 a b c m 0.20 [0.008] 0.10 [0.004] c c 1. dimensioning & tolerancing per ansi y14.5m-1994 2. dimensions are shown in millimeters [inches]. 3. controlling dimension: millimeter. 4. datum plane h is located at the mold parting line. 5. datum a and b to be determined at datum plane h. 6. dimensions d and e1 are measured at datum plane h. dimensions does not include mold protrusions or interlead flash. mold protrusions or interlead flash shall not exceed 0.25 mm [0.010 inch] per side. 7. dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236 ab. 0.89 1.12 symbol max min a1 b 0.01 0.10 c 0.30 0.50 d 0.08 0.20 e 2.80 3.04 e1 2.10 2.64 e 1.20 1.40 a 0.95 bsc l 0.40 0.60 08 millimeters a2 0.88 1.02 e1 1.90 bsc ref 0.54 l1 bsc 0.25 l2 bsc ref

inches 8 0
0.0004 min max
dimensions 0.972 1.900 recommended footprint 0.802 0.950 2.742 3x l c l2 h 4 l1 7 notes : this part marking information applies to devices produced after 02/26/2001 ww = (27-52) if pre ceded by a let t er c h k j e f g d 0 2010 ye ar b a y 2007 2008 2009 2006 2005 2003 2004 2001 2002 5 7 9 8 6 3 4 1 2 c 29 z 52 50 51 x y 30 d x 24 w wor k we e k 27 28 b a 26 25 z y 03 04 01 02 c d a b date code marking instructions ww = (1-26) if prece de d by l as t digit of cale ndar year ye ar y w we e k wor k 2020 2017 2018 2019 2016 2015 2013 2014 2011 2012 2010 2007 2008 2009 2006 2005 2003 2004 2001 2002 2020 2017 2018 2019 2016 2015 2013 2014 2011 2012 f = irlml6401 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 h = irlml5203 g = irlml2502 note: a line above the work week (as s hown here) indicates l ead - f ree. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number x = irlml2244 w = irf ml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 z = irf ml9244 y = irlml2246

www.irf.com 9 ?

2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

10 www.irf.com data and specifications subject to change without notice. ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2012 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. surface mounted on 1 in square cu board refer to application note #an-994. note form quantity irlml9301trpbf micro3 (sot-23) tape and reel 3000 orderable part number package type standard pack ms l 1 (per ipc/je de c j-s t d-020d ??? ) rohs compliant yes micro3 (sot-23) qualification information ? moisture sensitivity level qualification level cons umer ?? (per je de c je s d47f ??? guidelines )

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