p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 1 6 0 v p - c hannel enhancement mode mosfet v oltage - 6 0 v c urrent - 15 a to - 252 f eatures ? r ds(on) , v gs @ - 10v,i d @ - 7.5 a< 6 8m ? r ds(on) , v gs @ - 4.5 v,i d @ - 4 .0 a< 8 5m ? high s witching speed ? improved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : to - 252 package ? term inals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.0104 ounces, 0.297 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds - 6 0 v gate - source volta ge v gs + 2 0 v continuous drain current t c =25 o c i d - 1 5 a t c = 100 o c - 9.5 pulsed drain current (note 1 ) t c =25 o c i dm - 6 0 power dissipation t c =25 o c p d 25 w t c = 100 o c 1 0 continuous drain current t a =25 o c i d - 4.0 a t a = 70 o c - 3.2 a power dissipation t a =25 o c p d 2.0 w power dissipation t a = 70 o c 1.3 single pulse avalanche energy (note 6 ) e as 3 1 mj operating junction and storage temperature range t j ,t stg - 55~1 50 o c typical thermal resistance (note 4,5 ) junction to case r jc o c /w j unction to ambient r ja 62.5 ? limited only by maximum junction temperature
p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d = - 250ua - 6 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250ua - 1. 0 - 1. 63 - 2.5 v drain - source on - state resistance r ds(on) v gs = - 10v,i d = - 7.5 a - 55 6 8 m gs = - 4.5 v,i d = - 4 .0 a - 73 8 5 zero gate voltage drain current i dss v ds = - 60 v,v gs =0v - - - 1 .0 ua gate - source leakage current i gss v gs = + 2 0v,v ds =0v - - + 100 na dynamic (note 7 ) total gate charge q g v ds = - 30 v, i d = - 7.5 a, v gs = - 10 v (note 3 ) - 17 - nc gate - source charge q gs - 2.8 - gate - drain charge q gd - 3.6 - input capacitance ciss v ds = - 30 v, v gs =0v, f=1.0mhz - 879 - pf output capacitance coss - 70 - reverse transfer capacitance crss - 47 - turn - on delay time td (on) v dd = - 30 v, i d = - 1 a, v g s = - 10v, r g = 6 (note 3 ) - 8.4 - ns turn - on rise time t r - 30 - turn - off delay time td (off) - 52 - turn - off fall time t f - 1 6 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 1 5 a reverse recovery time v sd i s = 1 a,v gs =0v - - 0. 7 3 - 1.0 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cyc les to keep initial t j =25c. 4. the maximum current rating is package limited 5. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. m ount ed on a 1 inch 2 with 2oz. square pad of copper 6. l= 0.1 mh, i as = - 25 a, v gs = - 1 0v , v d s = - 25 v, r g =25 ohm 7. guaranteed by design, not subject to product ion testing.
p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. ju nction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold vo ltage variation with temperature . fig. 10 capacitance vs. drain - source voltage . fig. 11 maximum safe operating area
p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 5 t ypical characteristic curves fig. 12 normalized thermal transient impedance
p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 6 packaging information . to - 252 dimension u nit: mm
p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 7 part no packing code version mounting pad layout part n o packing code package type packing type marking ver sion pjd15 p06a_l2_00001 to - 252 3,000pcs / 13
p p j d 1 5 p06a july 21 ,201 5 - rev.00 page 8 disclaimer
|
