sot-323 plastic-encapsulate mosfets CJW1012 n-channel power mosfet generral description this single n-channel mosfet has been designed using advanced power trench process to optimize the r ds(on). feature z high-side switching z low on-resistance z low threshold z fast switching speed z esd protected up to 2kv applications z drivers:relays, solenoids, lamps, hammers, displays, memories z battery operated systems z power supply converter circuits z load/power switching cell phones, pagers marking: c maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v dss 20 gate-source voltage v gs 12 v drain current -continuous i d(dc) 500 drain current -pulsed(note1) i dm(pulse) 1000 ma power dissipation (note 2 , t a =25 ) 150 maximum power dissipation (note 3 , t c =25 ) p d 275 mw thermal resistance from junction to ambient r ja 833 thermal resistance from junction to case r jc 455 /w storage temperature t j 150 junction temperature t stg -55 ~+150 so t -323 1. gate 2. source 3. drain 1 of 3 sales@zpsemi.com www.zpsemi.com CJW1012 b,apr,2012
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit on/off states drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 20 gate-threshold voltage v gs(th) v ds =v gs , i d =250a 0.45 1.2 v gate-body leakage current i gss v ds =0v, v gs =4.5v 1 a zero gate voltage drain current i dss v ds =16v, v gs =0v 100 na v gs =4.5v, i d =600ma 700 drain-source on-state resistance r ds(on) v gs =2.5v, i d =500ma 850 m ? forward transconductance g fs v ds =10v, i d =400ma 1 s dynamic characteristics input capacitance (note 4) c iss 100 output capacitance (note 4) c oss 16 reverse transfer capacitance (note 4) c rss v ds =16v,v gs =0v,f =1mhz 12 pf total gate charge q g 750 gate-source charge q gs 75 gate-drain charge q gd v ds =10v,v gs =4.5v, i d =250ma 225 nc switching times (note 4) turn-on delay time t d (on) 5 rise time t r 5 turn-off delay time t d(off) 25 fall time t f v dd =10v, r l =47 ? , i d =200ma, v gs =4.5v,r g =10 ? 11 ns drain-source diode characteristics drain-source diode forward voltage (note 5) v sd i s =0.15a, v gs = 0v 1.2 v notes: 1. repetitive rating: pulse width lim ited by maximum junction temperature. 2. this test is performed with no heat sink at t a =25 . 3. this test is performed with infinite heat sink at t c =25 . 4. these parameters have no way to verify. 5. pulse test : pulse width 300s, duty cycle 0.5%. 2 of 3 sales@zpsemi.com www.zpsemi.com CJW1012 b,apr,2012
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 12345 200 300 400 500 200 400 600 800 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 25 50 75 100 125 0.65 0.70 0.75 0.80 0.85 0.90 5.5v 4.5v 3.5v drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed v gs =1.5v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =600ma t a =25 pulsed v gs ?? r ds(on) 500 100 t a =25 pulsed v gs =4.5v v gs =2.5v on-resistance r ds(on) (m ? ) drain current i d (ma) i d ?? r ds(on) 2.5v drain current i d (ma) gate to source voltage v gs (v) v ds =16v pulsed t a =100 t a =25 transfer characteristics source current i s (ma) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =250ua threshold voltage 3 of 3 sales@zpsemi.com www.zpsemi.com CJW1012 b,apr,2012
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