page:p2-p1 plastic-encapsulate transistors features ? high hfe ? complementary to kta1505 maximum ratings ( ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current -continuous i c 0.5 a collector power dissipation p c 0.2 w junction temperature t j 150 s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100 a, i e = 0 35 v collector-emitter breakdown voltage v ceo i c = 1ma, i b =0 30 v emitter-base breakdown voltage v ebo i e = 100 a, i c = 0 5 v collector cut-off current i cbo v cb = 35v, i e =0 0.1 ua emitter cut-off current i ebo v eb = 5v, i c =0 0.1 ua dc current gain h fe1 v ce =1v, i c = 100ma 70 400 h fe2 v ce =6v, i c = 400ma o y 25 40 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.25 v base-emitter voltage v be v ce =1v, i b = 100ma 1 v transition frequency f t v ce =6v, i c =20ma 300 mhz collector output capacitance c ob v cb =6v,i e =0,f=1mh z 7 pf classification of h fe rank o y g range 70-140 120-240 200-400 marking wo wy wg KTC3876 (npn) 1. base 2. emitter sot-23 3. collecto mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors KTC3876 typical characteristics mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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