hsch-55xx beam lead schottky diode pairs for mixers and detectors data sheet description these dual beam lead diodes are constructed using a metal-semiconductor schottky barrier junction. advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semico nduc tor. a nitride passiva - tion layer provides immunity from contaminants which could otherwise lead to ir drift. the avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. applications the beam lead diode is ideally suited for use in stripline or microstrip or coplanar wav e guide circuits. its small physical size and uniform dimensions give it low parasit - ics and repeatable rf characteristics through k - band. these dual beam leads are intended for use in balanced mixers and in even harmonic anti-parallel pair mixers. by using several of these devices in the proper confgu - ration it is easy to assemble bridge quads, star quads, and ring quads for class i, ii, or iii type double balanced mixers. assembly techniques thermocompression bonding is recommended. welding or conductive epoxy may also be used. for additional in - formation see application note 979, the handling and bonding of beam lead devices made easy, or applica - tion note 993, beam lead device bonding to soft sub - strates. features ? monol ithic pair: closely matched electrical parameters ? low capacitance: 0.1 pf maximum at 0 volts ? low noise figure: typical 7.5 db at 26 ghz ? rugged construction: 4 grams minimum lead pull ? platinum tri-metal system: high temperature stability ? polyimide scratch prote c tion ? silicon nitride passivation: stable, reliable perfor mance outline 04b ca thode gold beam s dimensions in m (1/1000 inch) 190 (7.0) 160 (6.0) 120 (5.0) 90 (3.5) 250 (10.0) 200 (8.0) 220 (9.0) 180 (7.0) 540 (21.0) 480 (19.0) 220 (9.0) 180 (7.0) glass anode ca thode glass glass pla tinum met alliza tion 60 (2.4) 40 (1.5) 8 min. (0.3)
s- 2 electrical specifcations for dc tested diodes at t a = 25c part number hsch- [1] barrier minimum breakdown voltage v br (v) maximum dynamic resistance r d ( ? ) max. ? r d ( ? ) maximum total capacitance c t (pf) max. ? c t (pf) maximum forward voltage v f (mv) max. ? v f (mv) max. i r (na) 5512 medium 4 16 3 0.15 0.03 500 10 100 5531 low 20 3 0.10 0.02 375 400 test conditions i r = 10 a i f = 5 ma v r = 0 v, f = 1 mhz i f = 1 ma v r = 1 note: 1. standard hi-rel program available on HSCH-5531. others are available upon request. typical detector characteristics at t a = 25c medium barrier and low barrier (dc bias) parameter symbol typical value units test conditions tangential sensitivity tss -55 dbm 20 a bias, zero bias, p in = -40 dbm, voltage sensitivity 9.0 mv/ w r l = 100 k ?, video bandwidth = 2 mhz video resistance r v 1350 ? f = 10 ghz low barrier (zero bias) parameter symbol typical value units test conditions tangential sensitivity tss -46 dbm zero bias, zero bias, p in = -30 dbm, voltage sensitivity 17 mv/ w r l = 10 m ?, video bandwidth = 2 mhz video resistance r v 1.4 m? f = 10 ghz maximum ratings (for each diode) pulse power incident at t a = 25c .............................................................................. 1 w pulse width = 1 s, du = 0.001 cw power dissipation at t a = 25c .................................................................. 150 mw ? measured ?in?an? infnite? heat?sink? derated? linearly? to? zero? at? maximum? rated? temperature t opr C operating temperature range ............................................. -65c to +175 c t stg C storage temperature range ................................................... -65c to +200c minimum lead strength ...................................................... 4 grams pull on any lead diode mounting temperature ................................................ 350c for 10 sec. max. these diodes are esd sensitive. handle with care to avoid static discharge through the diode.
3 typical parameters spice parameters parameter units hsch-5512 HSCH-5531 b v v 5 5 c j0 pf 0.13 0.09 e g ev 0.69 0.69 i bv a 10e-5 10e-5 i s a 3 x 10e-10 4 x 10e-8 n 1.08 1.08 r s ? 9 13 p b v 0.65 0.5 p t 2 2 m 0.5 0.5 forward current (ma) 0 0.01 forward voltage (v) 100 1 10 0.6 0.8 1.0 0.1 0.4 0.2 +125 c +25 c - 5 5 c forward current (ma) 0 0.01 forward voltage (v ) 100 1 10 0.6 0.8 0.1 0.4 0.2 +125 c +25 c - 5 5 c noise figure (db) 0 5. 0 frequency (ghz) 7. 5 6. 5 6. 0 7. 0 16 20 24 28 5. 5 12 4 2 9.375 26 8 0.25 pf 0.15 pf 0.1 pf figure 1. typical forward characteristics for medium barrier beam lead diodes. hsch-5512. figure 2. typical forward characteristics for low barrier beam lead diodes. HSCH-5531. figure 3. typical noise fgure vs. frequency.
s- 4 typical parameters, continued 0.2 0.5 1. 0 1. 0 2. 0 3.0 5. 0 2.0 3.0 5. 0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10.0 10. 0 10.0 2 18 ghz 3 ma 0.2 10 1 ma 1.5 ma 0.2 0.5 1.0 1. 0 2. 0 3.0 5. 0 2.0 3.0 5. 0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10.0 10. 0 10.0 2 18 ghz 150 a 0.2 10 20 a 50 a figure 6. typical admittance characteristics with self bias. hsch-5512. figure 7. typical admittance characteristics with external bias. 0.2 0.5 1. 0 1. 0 2. 0 3.0 5. 0 2.0 3.0 5. 0 0.2 0.5 0.2 0.5 1.0 2.0 3.0 5.0 10. 0 10. 0 10.0 10 2 18 26 ghz 0.2 0.5 1. 0 1. 0 2. 0 3.0 5. 0 2.0 3.0 5. 0 0.2 0.5 0.5 1.0 2.0 3.0 5.0 10. 0 10. 0 10.0 10 2 26 ghz 150 a 50 a 20 a 0.2 20 figure 4. typical admittance characteristics with 1 ma figure 5. typical admittance characteristics with
5 models for each beam lead schottky diode hsch -5531 1 ma self bias 0.11 pf 0.03 pf 0.04 nh 0.1 nh 11 267 hsch-5512 self bias 0.02 pf 0.1 nh c j r s r j part number 1.0 ma self bias 1.5 ma self bias 3.0 ma self bias r 1 ( ? ) r 2 ( ? ) c (pf) r 1 ( ? ) r 2 ( ? ) c (pf) r 1 ( ? ) r 2 ( ? ) c (pf) hsch-5512 5.0 393 0.11 5.2 232 0.11 5.0 150 0.12
hsch -5531 external bias hsch-5512 external bias 0.03 pf 11 0.1 nh 0.04 nh c j r j 0.02 pf 0.1 nh c j r j r s part numbers 20 a dc bias 50 a dc bias 150 a dc bias r j ( ? ) c j (pf) r j ( ? ) c j (pf) r j ( ? ) c j (pf) HSCH-5531 1400 0.09 560 0.09 187 0.10 part numbers 20 a dc bias 50 a dc bias 150 a dc bias r s ( ? ) r j ( ? ) c j (pf) r s ( ? ) r j ( ? ) c j (pf) r s ( ? ) r j ( ? ) c j (pf) hsch-5512 2.8 1240 0.11 4.7 550 0.12 2.7 180 0.13 models for each beam lead schottky diode, continued for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 2006 avago technologies, limited. all rights reserved. obsoletes 5965-8850en av01-0595en - october 19, 2006
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