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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK600 description drain current C i d = 25a@ t c =25 drain source voltage- : v dss = 60v(min) fast switching speed applications high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 60 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 25 a p tot total dissipation@tc=25 75 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK600 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 1ma 60 v v gs( th ) gate threshold voltage v ds = v gs ; i d =1ma 2.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 15a 0.055 i gss gate source leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =50v; v gs = 0 1 ua v sd diode forward voltage i f =25a; v gs =0 1.3 1.7 v tr rise time v gs =10v;i d =3a; r l =50 50 75 ns ton turn-on time 75 115 ns tf fall time 80 110 ns toff turn-off time 240 330 ns pdf pdffactory pro www.fineprint.cn |
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