p i n n i n g pin 1 2 description cathode anode to p view marking code ? s3ab -s3mb simplified outline smbf and symbol s 3 a b f s 3 b b f s 3 d b f s 3 g b f s 3 j b f s 3 k b f s 3 m b f 1 2 features for surface mounted applications low profile package glass passivated chip junction easy to pick and place lead free in comply with eu rohs 2011/65/eu directives mechanical data case: smbf terminals: solderable per mil-std-750, method 2026 pprox. weight : 57mg / 0.0 02oz " " " " " " " " a s u r f a c e m o u n t g e n e r a l p u r p o s e s i l i c o n r e c t i f i e r s r e v e r s e v o l t a g e - 5 0 t o 1 0 0 0 v f o r w a r d c u r r e n t - 3 a ratings at 25 ambient temperature unless otherwise specified. single phase half-wave 60 hz, resistive or inductive load, for capacitive load current derate by 20 %. c maximum dc blocking voltage peak forward surge current 8.3 ms single half sine wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 3 a p a r a m e t e r maximum repetitive peak reverse voltage maximum rms voltage operating and storage temperature range maximum average forward rectified current at ta = 65 c maximum dc reverse current ta = 25 c at rated dc blocking voltage ta =125 c 1 ? typical junction capacitance 2 ? v rrm v rms v dc i f(av) i fsm v f i r 50 100 200 400 600 800 1000 v 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v 3 100 1.1 5 200 45 40 -55 ~ +150 a a v ?a pf c m a x i m u m r a t i n g s a n d e l e c t r i c a l c h a r a c t e r i s t i c s typical thermal resistance r ? ja measured at 1 mhz and applied reverse voltage of 4 v d.c 2 ? 1 ? p.c.b. mounted with 0. 5 x 0.5" (12.7 x 12.7 mm) copper pad areas. c/w c j t, t j stg s y m b o l s u n i t s s 3 a b f t h r u s 3 m b f
f i g . 3 t y p i c a l i n s t a n e o u s f o r w a r d c h a r a c t e r i s t i c s instaneous forward current (a) 0.5 1.0 1.5 2.0 2.5 0.0 0.01 0.1 1.0 10 instaneous forwar d voltage (v) t=25 j c pulse with 300?s 1% duty cycle f i g . 2 t y p i c a l r e v e r s e c h a r a c t e r i s t i c s 0.1 1.0 10 100 20 40 60 80 100 120 00 140 percent of rated peak voltage (%) reverse instaneous current ? a ? reverse ? t =125 j c t=25 j c junction capacitance ( pf) 1.0 10 100 0.1 1 10 100 reverse voltage (v) t =25 j c 20 40 60 80 100 120 00 10 100 f i g . 6 m a x i m u m n o n - r e p e t i t i v e p e a k f o r w a r d s u r a g e c u r r e n t peak a) forward surage current ( number of cycles 8.3 ms single half sine wave (jedec method) 1 25 50 75 100 125 150 175 average forward current (a) lead temperature ( c) f i g . 1 f o r w a r d c u r r e n t d e r a t i n g c u r v e 1.0 2.0 3.0 0.0 single phase half wave resistive or inductive p.c.b mounted on 0.5 0.5"(12.7 ) 12.7mm pad areas. f i g . 4 t y p i c a l j u n c t i o n c a p a c i t a n c e s 3 a b f t h r u s 3 m b f
m a r k i n g type number marking code s3abf s3bbf s3dbf s3gbf s3jbf s3kbf s3mbf s3ab s3bb s3db s3gb s3jb s3kb s3mb t h e r e c o m m e n d e d m o u n t i n g p a d s i z e unit ? mm(mil) 3.0(118) 1.8(71) 2.54(100) 1.8(71) p a c k a g e o u t l i n e p l a s t i c s u r f a c e m o u n t e d p a c k a g e ; 2 l e a d s s m b f a c " all round v a m e unit mm 1.3 0.26 4.4 3.7 5.5 1.1 0.18 4.2 3.5 5.1 9 max min mil max min acde h e " 2.2 1.9 e bottom view h e g to p view 1.0 g g " all round e d a e pad pad 51 10 173 146 216 43 7 165 138 200 86 75 40 s 3 a b f t h r u s 3 m b f
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