? 2015 ixys corporation, all rights reserved IXXH110N65C4 v ces = 650v i c110 = 110a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.35v t fi(typ) = 30ns ds100497b(01/15) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 4ma, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 2 m a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 110a, v ge = 15v, note 1 1.98 2.35 v t j = 150 ? c 2.34 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 234 a i lrms terminal current limit 160 a i c110 t c = 110c 110 a i cm t c = 25c, 1ms 600 a ssoa v ge = 15v, t vj = 150c, r g = 2 ? i cm = 220 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 10 ? , non repetitive p c t c = 25c 880 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g xpt tm 650v igbt genx4 tm extreme light punch through igbt for 20-60 khz switching features ? optimized for 20-60khz switching ? square rbsoa ? avalanche capability ? short circuit capability ? international standard package advantages ? high power density ? 175c rated ? extremely rugged ? low gate drive requirement applications ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters
ixys reserves the right to change limits, test conditions, and dimensions. IXXH110N65C4 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 e ?? p to-247 (ixxh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 24 40 s c ie s 3690 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 240 pf c res 140 pf q g(on) 180 nc q ge i c = 110a, v ge = 15v, v ce = 0.5 ? v ces 32 nc q gc 76 nc t d(on) 35 ns t ri 46 ns e on 2.30 mj t d(off) 143 ns t fi 30 ns e of f 0.60 1.05 mj t d(on) 30 ns t ri 32 ns e on 2.90 mj t d(off) 130 ns t fi 43 ns e off 0.77 mj r thjc 0.17 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 55a, v ge = 15v v ce = 400v, r g = 2 ? note 2 inductive load, t j = 150c i c = 55a, v ge = 15v v ce = 400v, r g = 2 ? note 2
? 2015 ixys corporation, all rights reserved IXXH110N65C4 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 9v 11v 7v 8v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 14v 10v 11v 13v 12v 8v 9v 7v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 8v 9v 7v 11v 12v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 110a i c = 55a i c = 220a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 220a t j = 25oc 110a 55a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 45678910 v ge - volts i c - amperes t j = - 40oc 25oc t j = 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH110N65C4 fig. 7. transconductance 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 100 150 200 250 300 350 400 450 500 550 600 650 700 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 325v i c = 110a i g = 10ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2015 ixys corporation, all rights reserved IXXH110N65C4 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 4 6 8 10 12 14 r g - ohms e off - millijoules 0 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 55a i c = 110a fig. 15. inductive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 2 4 6 8 101214 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 400 450 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 110a i c = 55a fig. 13. inductive switching energy loss vs. collector current 0.2 0.6 1.0 1.4 1.8 2.2 2.6 55 60 65 70 75 80 85 90 95 100 105 110 i c - amperes e off - millijoules 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? ????? v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on - - - - r g = 2 ? ???? v ge = 15v v ce = 400v i c = 55a i c = 110a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 55 60 65 70 75 80 85 90 95 100 105 110 i c - amperes t f i - nanoseconds 90 110 130 150 170 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? ? , v ge = 15v v ce = 400v t j = 25oc, 150oc fig. 17. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 70 90 110 130 150 170 190 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? ? , v ge = 15v v ce = 400v i c = 110a i c = 55a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH110N65C4 ixys ref: ixx_110n65c4(e8) 01-30-13-a fig. 19. inductive turn-on switching times vs. collector current 10 30 50 70 90 110 130 55 60 65 70 75 80 85 90 95 100 105 110 i c - amperes t r i - nanoseconds 25 30 35 40 45 50 55 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 26 30 34 38 42 46 50 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? ? , v ge = 15v v ce = 400v i c = 110a i c = 55a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 2 4 6 8 10 12 14 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 55a i c = 110a
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