unisonic technologies co., ltd 3n65 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2015 unisonic technologies co., ltd qw-r502-590.f 3 a , 650v n-channel power mosfet ? description the utc 3n65 is a high voltage and high current power mosfet designed to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. this power mosfet is usually used in high speed switching applications at power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) < 3.8 ? @ v gs = 10v, i d = 1.5a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 123456 7 8 3n65l-ta3-t 3n65g-ta3-t to-220 g d s - - - - - tube 3n65l-tf1-t 3n65g-tf1-t to-220f1 g d s - - - - - tube 3n65l-tf3-t 3n65g-tf3-t to-220f g d s - - - - - tube 3n65l-tm3-t 3n65g-tm3-t to-251 g d s - - - - - tube 3n65l-tms-t 3n65g-tms-t to-251s g d s - - - - - tube 3n65l-tms2-t 3N65G-TMS2-T to-251s2 g d s - - - - - tube 3n65l-tms4-t 3n65g-tms4-t to-251s4 g d s - - - - - tube 3n65l-tn3-r 3n65g-tn3-r to-252 g d s - - - - - tape reel 3n65l-t60-k 3n65g-t60-k to-126 g d s - - - - - bulk - 3n65g-k08-5060-r dfn-8(56) s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
3n65 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-590.f ? marking package marking to-220 to-220f to-220f1 to-251 to-251s to-251s2 to-251s4 to-252 to-126 dfn-8(56)
3n65 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-590.f ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 3.0 a continuous drain current i d 3.0 a pulsed drain current (note 2) i dm 12 a avalanche energy single pulsed (note 3) e as 200 mj repetitive (note 2) e ar 7.5 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220 p d 75 w to-220f/to-220f1 34 to-251/to-252/to-251s to-251s2/to-251s4 50 to-126 17 dfn-8(56) 25 junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l = 64mh, i as = 2.4a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 3.0a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient to-220/to-220f to-220f1 ja 62.5 c/w to-251/to-252/to-251s to-251s2/to-251s4 110 to-126 132 dfn-8(56) 75 (note) junction to case to-220 jc 1.67 c/w to-220f/to-220f1 3.68 to-251/to-252/to-251s to-251s2/to-251s4 2.5 to-126 7.36 dfn-8(56) 5 (note) note: the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper.
3n65 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-590.f ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650 v, v gs = 0 v 10 a gate-source leakage current forward i gss v gs = 30 v, v ds = 0 v 100 na reverse v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.6 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 1.5a 2.8 3.8 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz 430 500 pf output capacitance c oss 50 65 pf reverse transfer capacitance c rss 11 20 pf switching characteristics turn-on delay time t d ( on ) v dd = 30v, i d = 0.5a, r g = 25 ? (note 1, 2) 32 45 ns turn-on rise time t r 64 80 ns turn-off delay time t d ( off ) 115 140 ns turn-off fall time t f 60 75 ns total gate charge q g v ds = 50v, i d =1.3a, v gs = 10 v (note 1, 2) 51 70 nc gate-source charge q gs 13 nc gate-drain charge q gd 11 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 3.0 a 1.4 v maximum continuous drain-source diode forward current i s 3.0 a maximum pulsed drain-source diode forward current i sm 12 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 64mh, i as = 2.4a, v dd = 50v, r g = 25 ? , starting t j = 25c
3n65 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-590.f ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
3n65 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-590.f ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% switching test circuit switching waveforms gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
3n65 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-590.f ? typical characteristics drain-source breakdown voltage, bv dss (normalized) drain-source on-resistance, r ds(on) (normalized) thermal response, jc (t) drain current, i d (a)
3n65 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-590.f ? typical characteristics(cont.) safe operating area 10 0 10 -1 10 -2 drain-source voltage, v ds (v) 10 2 10 1 10 0 10 3 notes: 1. t j =25c 2. t j =150c 3. single pulse dc 10ms 1ms 100s operation in this area is limited by r ds(on) 10 1 650 1 0.1 0.2 source-drain voltage, v sd (v) on state current vs. allowable case temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 notes: 1. v gs =0v 2. 250s test utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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