1. product profile 1.1 general description 200 w ldmos power transistor for various applications such as ism and rf plasma lighting at frequencies from 425 mhz to 450 mhz. 1.2 features and benefits ? high efficiency ? excellent ruggedness ? excellent thermal stability ? integrated esd protection ? easy power control ? designed for ism operation (425 mhz to 450 mhz) ? input integration for simple board design ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for cw applications in the 425 mhz to 450 mhz frequency range such as ism and rf plasma lighting. blp05m7200 power ldmos transistor rev. 2 ? 18 november 2013 product data sheet table 1. typical performance rf performance at t case = 25 ? c, i dq = 2 ma in an application circuit. test signal f v ds p l(av) g p ? d (mhz) (v) (w) (db) (%) cw 440 28 210 21 81
blp05m7200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 18 november 2013 2 of 10 nxp semiconductors blp05m7200 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. 5. thermal characteristics table 2. pinning all pins must be connected for correct oper ation and to prevent damage to the device. pin description simplified outline graphic symbol 1, 2 drain 3, 4 gate 5source [1] d d d table 3. ordering information type number package name description version blp05m7200 hsop4f plastic, heatsink small outline package; 4 leads (flat) sot1138-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t case case temperature - 150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; p l = 200 w 0.5 k/w
blp05m7200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 18 november 2013 3 of 10 nxp semiconductors blp05m7200 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blp05m7200 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =20ma; p l = 200 w (cw); f = 440 mhz. 7.2 impedance information table 6. dc characteristics t j = 25 ? c per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =3.2ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 320 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0 v; v ds =28v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -52-a i gss gate leakage current v gs =11 v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =11.2a - 20 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =11.2a -0.08- ? table 7. rf characteristics test signal: cw at 440 mhz; rf performance at v ds = 28 v; i dq = 2 ma; t case = 25 ? c; unless otherwise specified; in a cl ass-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 210 w 19.5 21 - db rl in input return loss p l = 210 w - ? 15 ? 11 db ? d drain efficiency p l = 210 w 73 77 - % table 8. typical impedance measured load-pull data. typical valu es unless otherwise specified. i dq =20ma; v ds =28v. z s and z l defined in figure 1 . f z s z l (mhz) (? ) ( ? ) 440 1.5 + j0.7 1.1 + j0.14
blp05m7200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 18 november 2013 4 of 10 nxp semiconductors blp05m7200 power ldmos transistor 7.3 test circuit fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h printed-circuit board (pcb): rogers ro4350b; ? r = 3.5; thickness = 0.762 mm. see table 9 for list of components. fig 2. component layout for test circuit table 9. list of components for test circuit, see figure 2 . component description value remarks c1, c3 multilayer ceramic ch ip capacitor 160 pf atc800a c2 multilayer ceramic ch ip capacitor 39 pf atc800a c4, c9 multilayer ceramic ch ip capacitor 910 pf atc800b c5, c6 multilayer ceramic chip capacitor 33 pf atc800b d d d / & |