jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 7 - http://www.jjwdz.com acjt4 series 4 a triac s rev. 4 .0 description: t he acjt4 series of double mesa technology provide high interference immunity , they can be used as an static on/off function in e lectrical control system , and used as a driver of low power and high inductance or resistive load s, such as jet pumps of dishwashers, fans o f air - conditioner ... acjt4xx - xxa provides insulation voltage rated at 2 5 00v rms and acjt4xx - xxf provides insulation voltage rated at 2000v rms from all three terminals to external he a tsink . main features symbol value unit i t( rms ) 4 a v drm /v rrm 1000 v i gt 5 or 10 or 25 v / s absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage ( t j =25 ) v drm 100 0 v repetitive peak reverse voltage ( t j =25 ) v rrm 100 0 v non repetitive surge peak off - state voltage v dsm v drm +1 00 v non repetitive peak reverse voltage v rsm v r rm +1 00 v rms on - state current to - 251/ to - 252/ to - 220a (ins) (t c =110 ) i t( rms ) 4 a to - 220b (non - ins) (t c =11 5 ) to - 220f (ins) / sot - 223 (t c =1 03 ) non repetitive surge peak on - state current ( full cycle, f=50hz ) i tsm 30 a to-2 52 t1(1) g(3) t2(2) to-2 51 1 2 3 1 3 2 sot-223 to-220a insulated to-220f insulated to-220b non-insulated 1 1 1 1 2 2 2 2 3 3 3 3
acjt4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 7 - http://www.jjwdz.com i 2 t value for fusing ( tp= 10 m s ) i 2 t 4.5 a 2 s rate of rise of on - state current ( i g = 2 i gt ) di t /dt 50 a/ s peak gate current i gm 1 a average gate power dissipation p g(av) 0. 1 w peak gate power p gm 1 w electrical characteristics (t j =25 unless otherwise specified ) symbol test condition quadrant value unit acjt4 05 acjt4 10 acjt4 25 i gt v d =12v r l =33 - - max 5 10 25 ma v gt - - max 1.3 1.4 1.5 v v gd v d =v drm t j =125 r l = 3.3 k - - min 0.2 v i l i g = 1.2 i g t - max 15 30 40 ma 20 45 60 i h i t = 100m a max 10 25 35 ma dv/dt v d =2/3v drm gate ope n t j = 125 min 300 600 1000 v / s static characteristics symbol parameter value(max) unit v tm i t m = 5.6 a tp= 380 s t j =25 1. 5 5 v i drm v d =v d rm v r =v r rm t j =25 10 a i rrm t j =1 25 1 ma thermal resistances symbol parameter value unit r th(j - c) junction to case(ac) to - 251/ to - 252 / to - 220a (ins) 3.7 /w to - 220b (non - ins) 2.8 to - 220f (ins) / sot - 223 4.5
acjt4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 7 - http://www.jjwdz.com ordering information package mechanical data a c j t 4 0 5 - 1 0 h a c s w i t c h i t ( r m s ) : 4 a 0 5 : i g t 1 - 3 5 m a 1 0 : i g t 1 - 3 1 0 m a 2 5 : i g t 1 - 3 2 5 m a v : s o t - 2 2 3 a : t o - 2 2 0 a ( i n s ) f : t o - 2 2 0 f ( i n s ) b : t o - 2 2 0 b ( n o n - i n s ) h : t o - 2 5 1 k : t o - 2 5 2 j i e j i e m i c r o e l e c t r o n i c s c o . , l t d t r i a c s 1 0 : v d r m / v r r m 1 0 0 0 v
acjt4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 7 - http://www.jjwdz.com package mechanical data a v1 v1 v1 d c2 c a2 e b2 l2 h l g l1 b b3 dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 b3 c c2 d e g h l l1 2.20 0.90 0.55 5.10 2.40 1.20 0.65 5.40 0.086 0.035 0.022 0.200 0.095 0.047 0.026 0.213 0.76 0.85 0.48 6.40 6.70 0.252 0.264 16.0 17.0 0.630 0.669 8.90 9.40 0.350 0.370 0.030 0.033 0.45 0.62 2.30 0.091 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.80 1.90 0.071 0.075 4 4 to-251 a v1 v1 v1 d c2 e b2 l2 h 0.6 min a2 c l1 g b dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 c c2 d e g h l1 2.20 0.03 0.55 5.10 2.40 0.23 0.65 5.40 0.086 0.001 0.022 0.200 0.095 0.009 0.026 0.213 0.48 6.40 6.70 0.252 0.264 9.35 10.6 0.368 0.417 0.45 0.62 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.30 1.70 0.051 0.067 4 4 4.40 4.70 0.173 0.185 v2 0 8 0 8 v2 to-252
acjt4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 7 - http://www.jjwdz.com package mechanical data a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.386 0.409 6.55 6.95 0.258 0.274 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220a ins jie a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220b non-ins
acjt4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 6 / 7 - http://www.jjwdz.com package mechanical data a d e h g b c c2 max 3.5mm c3 v1 l3 l2 f l1 dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 v1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45 3.63 0.143 0.80 0.031 45 to-220f ins fig.1 maximum power dissipation versus rms on-state current fig.2: rms on-state current versus case temperature i t(rms) (a) to-251/to-252/ to-220a(ins) p(w) 0 1 2 3 4 5 0 1 2 i t(rms) (a) tc ( ) 0 1 2 3 0 25 50 75 100 125 4 3 4 5 6 5 6 to-220b (non-ins) to-220f(ins)/ sot-223 =180
acjt4 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 7 / 7 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangsu jiejie as sumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the fourth version which is made in 1 2 - j une - 201 5 . this document supersedes and replaces all infor mation previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copyright ? 201 5 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.3: surge peak on-state current versus number of cycles fig.6: relative variations of holding current, latching curretn versus junction temperature fig.4: on-state characteristics (maximum values) 1 10 100 1000 number of cycles 0 5 10 15 20 i tsm (a) i tm (a) v tm (v) 0 0.5 1.0 1.5 2.0 2.5 0 -40 -20 0 20 40 60 80 100 120 140 i h ,i l (tj) /i h ,i l (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 30 35 tj ( ) 2 4 6 8 fig.5: relative variations of gate trigger current versus junction temperature -40 -20 0 20 40 60 80 100 120 140 i gt (tj) /i gt (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i gt1 &i gt2 tj ( ) i h i l i gt3 tj=25 tj=125 t=20ms one cycle
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