62712 tkim/22912 tkim tc-00002729/31010qb tkim tc-00002256 no. a1638-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 bfl4001 n-channel power mosfet 900v, 6.5a, 2.7 , to-220f-3fs stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)=2.1 (typ.) ? input capacitance ciss=850pf (typ.) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 900 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c 6.5 a i dpack *2 tc=25 c (our ideal heat dissipation condition)*3 4.1 a drain current (pulse) i dp pw 10 s, duty cycle 1% 13 a allowable power dissipation p d 2.0 w tc=25 c (our ideal heat dissipation condition)*3 37 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 223 mj avalanche current *5 i av 6.5 a note : * 1 shows chip capability * 2 package limited * 3 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =50v, l=10mh, i av =6.5a * 5 l 10mh, single pulse package dimensions unit : mm (typ) 7528-001 ordering number : ena1638b product & package information ? package : to-220f-3fs ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./magazine marking electrical connection 1 3 2 fl4001 lot no. 1 : gate 2 : drain 3 : source to-220f-3fs 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 BFL4001-1E
bfl4001 no. a1638-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 900 v zero-gate voltage drain current i dss v ds = 720 v, v gs =0v 1.0 m a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 2.0 4.0 v forward transfer admittance | yfs | v ds =20v, i d = 3.25 a 1.8 3.6 s static drain-to-source on-state resistance r ds (on) i d = 3.25 a, v gs =10v 2.1 2.7 input capacitance ciss v ds =30v, f=1mhz 850 pf output capacitance coss 130 pf reverse transfer capacitance crss 43 pf turn-on delay time t d (on) see speci ed test circuit. 19 ns rise time t r 49 ns turn-off delay time t d (off) 156 ns fall time t f 52 ns total gate charge qg v ds =200v, v gs =10v, i d =6.5a 44 nc gate-to-source charge qgs 7.0 nc gate-to-drain ?miller? charge qgd 22 nc diode forward voltage v sd i s =6.5a, v gs =0v 0.85 1.2 v switching time test circuit avalanche resistance test circuit ordering information device package shipping memo BFL4001-1E to-220f-3fs 50pcs./magazine pb free 50 50 rg v dd l 10v 0v bfl4001 pw=10 s d.c. 0.5% p. g r gs =50 g s d i d =3.25a r l =61.5 v dd =200v v out bfl4001 v gs =10v
bfl4001 no. a1638-3/7 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs it15294 it15295 0 0 14 12 8 10 10 40 535 30 20 15 25 6 4 2 0 14 12 8 10 6 4 2 010 9 8 26 15 34 7 20v 10v tc=25 c v ds =20v v gs =4v 5v tc= --25 c 25 c 75 c 6v 7v static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v r ds (on) -- tc r ds (on) -- v gs i s -- v sd drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds | y fs | -- i d forward transfer admittance, | y fs | -- s it15296 it15297 --50 --25 0 25 50 75 100 125 150 0 7 6 3 1 4 5 2 it15299 0.2 0.4 0.6 0.8 1.2 1.0 0.01 0.1 10 7 5 3 2 3 2 7 5 3 2 2 1.0 7 5 3 it15298 25 c --25 c tc=75 c 0.01 0.1 23 57 23 57 1.0 10 23 57 1.0 0.1 2 5 7 5 7 3 2 3 7 5 v ds =20v tc= --25 c 75 c v gs =0v 45 0 6 5 15 13 9 71114 610 812 3 1 4 2 i d =3.25a tc=75 c 25 c --25 c v gs =10v, i d =3.25a it15300 10 100 3 2 2 5 7 7 3 7 5 0.1 1.0 10 23 57 2 2 33 57 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 5 3 2 50 10 53040 20 15 35 45 25 it15301 f=1mhz ciss coss crss 25 c
bfl4001 no. a1638-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg a s o drain-to-source voltage, v ds -- v drain current, i d -- a it15302 0 0 1 2 3 4 5 6 7 8 50 10 9 20 40 10 530 25 45 15 35 v ds =200v i d =6.5a it16791 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 0.1 10 s 100ms 10ms 1ms dc operation 1.0 10 100 1000 23 57 23 57 7 23 5 23 57 10 100 3 5 7 5 7 3 2 operation in this area is limited by r ds (on). 100 s * 1. shows chip capability * 2. our ideal heat dissipation condition tc=25 c single pulse i dp =13a (pw 10 s) i dc (*1)=6.5a i dpack (*2)=4.1a p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w it10478 0 0 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 it15304 it15305 0 0 20 40 60 80 100 140 120 5 10 25 37 20 40 35 30 15 160
bfl4001 no. a1638-5/7 magazine speci cation BFL4001-1E
bfl4001 no. a1638-6/7 outline drawing BFL4001-1E mass (g) unit 1.8 * for reference mm
bfl4001 ps no. a1638-7/7 note on usage : since the bfl4001 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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