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advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 28m fast switching performance i d 7a rohs compliant & halogen-free p-ch bv dss -30v r ds(on) 50m description i d -5.3a absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 7.0 -5.3 a i d @t a =70 5.8 -4.7 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation 2 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice 201501096ap parameter 1 thermal data ap4501gm-hf halogen-free product drain current, v gs @ 10v 3 drain current, v gs @ 10v 3 g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 so-8 ap4501 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. .
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 28 m v gs =4.5v, i d =5a - - 42 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 15 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua drain-source leakage current (t j =70 o c) v ds =24v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =6a - 8 13.5 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.5 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 - 19 - ns t f fall time v gs =10v - 5 - ns c iss input capacitance v gs =0v - 645 800 pf c oss output capacitance v ds =25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0 v , - 19 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc 2 ap4501gm-hf . ap4501gm-hf p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5.3a - - 50 m v gs =-4.5v, i d =-4.2a - - 90 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 5 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -10 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-5a - 8 13 nc q gs gate-source charge v ds =-15v - 1.7 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4.5 - nc t d(on) turn-on delay time v ds =-15v - 6.7 - ns t r rise time i d =-1a - 10 - ns t d(off) turn-off delay time r g =3.3 - 21 - ns t f fall time v gs =-10v - 10 - ns c iss input capacitance v gs =0v - 595 950 pf c oss output capacitance v ds =-25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.6a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-5a, v gs =0 v , - 18 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 3 . ap4501gm-hf n-channel fig 1. typical output characteristics fig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 4 0 4 8 12 16 20 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 10v 8.0v 6.0v 5.0v v g = 4.5v 0 4 8 12 16 20 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 10v 8.0v 6.0v 5.0v v g =4.5v 10 20 30 40 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on0 (m ? ) i d = 5a t a = 25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) . ap4501gm-hf n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs 30 -30 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12 . gate charge waveform 5 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0 3 6 9 12 15 18 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 6 a v ds = 24 v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% . ap4501gm-hf p-channel fig 1. typical output characteristics f ig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 6 0 10 20 30 40 0 1 2 3 4 5 6 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3 .0v 0 10 20 30 40 0 2 4 6 8 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3 .0v 30 40 50 60 70 2 4 6 8 10 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -4.2 a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -5.3 a v g = - 10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) . ap4501gm-hf p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 -30 fig 9. maximum safe operating area fig 10. eff ective transient thermal impedance fig 11. switching time waveform fig 12 . gate charge waveform 7 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0.0 4.0 8.0 12.0 16.0 20.0 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5.3a v ds = -15v 10 100 1000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1 s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% . ap4501gm-hf marking information 8 4501gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only . |
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