2007. 5. 22 1/3 semiconductor technical data KTD1415V epitaxial planar npn transistor revision no : 1 industrial use. high power switching applications. hammer driver, pulse motor driver applications. features h high dc current gain : h fe =2000(min.) at v ce =3v, i c =3a. h low saturation voltage : v ce(sat) =1.5v(max.) at i c =3a. maximum rating (ta=25 ? ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 - - 100 a emitter cut-off current i ebo v eb =5v, i c =0 - - 3.0 ma collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 100 - - v dc current gain h fe (1) v ce =3v, i c =3a 2000 - 15000 h fe (2) v ce =3v, i c =7a 1000 - - collector-emitter saturation voltage v ce(sat) (1) i c =3a, i b =6ma - 0.9 1.5 v v ce(sat) (2) i c =7a, i b =14ma - 1.2 2.0 base-emitter saturation voltage v be(sat) i c =3a, i b =6ma - 1.5 2.5 v switching time turn-on time t on 15 ? cc v =45v duty cycle 1% i b2 b2 i =-i =6ma b1 b2 i i b1 20 s b1 i input output - 0.8 - s storage time t stg - 3.0 - fall time t f - 2.5 - characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5v collector current i c 7a base current i b 0.2 a collector power dissipation (tc=25 ? ) p c 30 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? 5k ? base collecto r emitter 150 ? ~ = ~ = equivalent circuit
2007. 5. 22 2/3 KTD1415V revision no : 1 ce(sat) collector-emitter saturation 0.3 1 voltage v (v) c 0 collector current i (a) 10 ce 8 6 410 2 collector-emitter voltage v (v) 0 ce(sat) v - i c 10 3 120 0.4 ce i - v c 0.3 dc current gain h fe 300 collector current i (a) 13 1030 c fe h - i c 2 4 6 8 12 common emitter tc=25 c 1.4 1.2 1.0 0.8 0.6 0.4 i =0.2ma b 0 12 0 collector-emitter voltage v (v) 210 468 ce 8 6 4 2 10 collector current i (a) 0 c c i - v ce tc=100 c common emitter 1.0 0.8 0.6 0.4 0 b i =0.2ma 12 0 collector-emitter voltage v (v) 210 468 ce 8 6 4 2 10 collector current i (a) 0 c c i - v ce common emitter tc=-50 c 4.0 3.5 3.0 2.5 2.0 1.5 1.0 b i =0.5ma 0 500 1000 3000 5000 10000 20000 common emitter v =3v ce tc=100 c 25 -50 c collector current i (a) 0.5 3 5 c i /i =500 common emitter b 5 3 0.5 voltage v (v) 1 base-emitter saturation be(sat) 0.4 20 13 10 c v - i be(sat) b common emitter i /i =500 c collector current i (a) c 10 tc= -50 c 25 100 100 25 tc=-50 c 5 5
2007. 5. 22 3/3 KTD1415V revision no : 1 th 10 transient thermal resistance 100 1 r ( c/w) c 0 collector current i (a) be 1.6 1.2 02.0 0.8 base-emitter voltage v (v) 0.4 th r - t w 1 0.1 0.01 10 0.001 pulse width t (sec) be i - v c 1 2 3 4 5 6 7 2.4 2.8 3.2 common emitter v =3v ce tc=100 c 25 -50 w 0.1 100 1000 curves should be applied in thermal limited area. (sigle nonrepetitive pulse) 1 infinite heat sink 2 no heat sink 1 2 safe operating area 5 3 1 0.5 0.3 0.1 0.05 collector current i (a) 0.03 c 3 collector-emitter voltage v (v) 10 1 30 100 ce 10 i max.(pulsed) c c i max. (continuous) dc operati o n tc=25 c 100 s 1ms 10 ms 100m s v max. ceo single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature
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