s m a l l s i g n a l s c h o t t k y d i o d e s reverse v oltage: 40 v olts forward current: 200 ma rohs device page 1 rev :c cdbt -40/s/c/a-g maximum ratings (at t a=25c unless otherwise noted) qw -ba001 comchip t echnology co., l td. reverse breakdown voltage reverse voltage leakage current forward voltage diode capacitance reverse recovery time unit symbol parameter v br i r v f c d t rr features -design for mounting on small surface. -high speed switching application, circuit protection. -low forward voltage drop. mechanical data -case: sot -23, molded plastic. -t erminals: solderable per mil-std-750, method 2026. -approx. weight: 0.0078 grams circuit diagram cdbt -40-g marking code: 43 1 2 3 cdbt -40s-g marking code: 44 1 2 3 cdbt -40c-g marking code: 45 1 2 3 cdbt -40a-g marking code: 46 1 2 3 conditions min. i r =10 a v r =30v i f =1ma i f =40ma v r =0v , f=1.0mhz i rr =1ma, i f =i r =10ma, r l =100 40 v na mv pf ns peak repetitive peak reverse voltage w orking peak reverse voltage dc blocking voltage forward continuous current power dissipation thermal resistance, junction to ambient junction temperature storage temperature unit symbol parameter v rrm v rwm v r i fm p d r ja t j t stg v alue 40 200 200 625 125 -65 to +125 v ma mw c/w c c electrical characteristics (at t a=25c unless otherwise noted) max. 200 380 1000 5 5 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) s o t - 2 3 3 1 2 0.1 18(3.00) 0.1 10(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.008(0.20) min
qw -ba001 ra ting and characteristic cur ves (cdbt -40/s/c/a-g) forward v oltage (v) 1.0 0.6 0.4 0.8 0 fig.1 forward characteristics 0.1 1 10 100 1000 f r a d u r e n t m a ) o w r c r ( reverse v oltage (v) 0 fig.2 reverse characteristics 0.1 r e v e r e c u r r n t ( n a ) s e 1 10 100 10000 20 reverse v oltage (v) 0 fig.3 capacitance between t erminals characteristics 0 c a p a c t a c b e t e e n t e r m i n l s ( p ) i n e w a f 1 2 4 5 30 50 ambient t emperature (c) fig.4 power derating curve 0 p o w e r d i s s i p a t i o n ( m w ) 160 comchip t echnology co., l td. page 2 rev :c 30 50 3 0 100 150 0.2 10 40 80 o t a =125 c 20 25 50 75 125 s m a l l s i g n a l s c h o t t k y d i o d e s o t a =-40 c o t a =0 c o t a =25 c o t a =75 c 1000 o t a =125 c o t a =-40 c o t a =0 c o t a =25 c o t a =75 c 10 40 t j =25c f=1mhz mounted on glass epoxy pcbs 40 120 200 240
qw -ba001 comchip t echnology co., l td. page 3 rev :c s m a l l s i g n a l s c h o t t k y d i o d e s b c d d d 2 d 1 e f p p 0 p 1 s o t - 2 3 s y m b o l a w w 1 ( m m ) ( i n c h ) 0 . 1 2 2 0 . 0 0 4 0 . 1 1 2 0 . 0 0 4 0 . 0 5 5 0 . 0 0 4 0 . 0 6 1 0 . 0 0 4 7 . 0 0 8 0 . 0 4 1 . 9 6 9 m i n . 0 . 5 1 2 0 . 0 0 8 s o t - 2 3 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 3 1 5 0 . 0 0 8 0 . 5 6 7 m a x . 3 . 1 0 0 . 1 0 2 . 8 5 0 . 1 0 4 . 0 0 0 . 1 0 1 . 5 5 0 . 1 0 3 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 5 0 . 0 m i n . 1 3 . 0 0 . 2 0 1 . 4 0 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 0 5 8 . 0 0 0 . 3 0 1 4 . 4 m a x . 1 7 8 1 reel t aping specification o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start t c direction of feed i n d e x h o l e d e f b w p p 0 p 1 a d 1 d 2 d w 1
qw -ba001 comchip t echnology co., l td. page 4 rev :c s m a l l s i g n a l s c h o t t k y d i o d e s suggested p ad layout size (inch) 0.031 (mm) 0.80 1.90 0.075 sot -23 part number cdbt -40-g marking code 43 marking code 2.02 0.080 d 2.82 0.1 1 1 a c b a b c xx 3 1 2 d cdbt -40s-g 44 cdbt -40c-g 45 cdbt -40a-g 46 xx = product type marking code standard packaging c a s e t y p e s o t - 2 3 3 , 0 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k
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