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  i nchange semiconductor isc product specification isc w ebsite is registered trademark 1 isc silicon pn p power transistor 2s a 6 80 description high power dissipation - : pc= 100w(max.)@t c =25 collector - emitter breakdown voltage - : v ( br) ce o = - 1 0 0 v(m in. ) complement to type 2sc10 80 applications desig ned for audio power amplifier applications. absolute maximum rat ings (t a = 25 ) symbol parameter value unit v c bo collector - base v oltage - 1 0 0 v v ce o collector - e mitter v oltage - 1 0 0 v v ebo emitter - b ase v oltage - 5 v i c collector c urrent - continuous - 1 2 a i e emitter c urrent - continuous 12 a p c collector p ower d issipat i on @ t c =25 100 w t j junction t emperature 15 0 t stg storage t emperature - 6 5 ~15 0
i nchange semiconductor isc product specification isc w ebsite is registered trademark 2 isc silicon pnp power transistor 2s a 6 80 electrical characteristics tj=25 v (br) ce o collector - e mitter breakdown v oltage i c = - 1 0m a ;i b = 0 - 1 0 0 v v (br) ebo emitter - b ase breakdown v oltage i e = - 1m a ;i c = 0 - 5 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 10 a ; i b = - 1 a - 3.0 v v be ( on ) base - e mitter o n v oltage i c = - 10 a ; v ce = - 5 v - 2.5 v i c b o collector c utoff c urrent v c b = - 5 0 v ; i e = 0 - 0.1 ma i ebo emitter c utoff c urrent v eb = - 5 v; i c = 0 - 0.1 ma h fe - 1 dc c urrent g ain i c = - 2 a ; v ce = - 5 v 40 140 h fe - 2 dc c urrent g ain i c = - 7 a ; v ce = - 5 v 15 c ob output capacitance v c b = - 10 v ; f test = 1mhz 900 pf f t current - gain bandwidth product i c = - 2 a ; v ce = - 5 v 6 mhz ? h fe - 1 classifications r y 40 - 80 70 - 140


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