ZXTC4591AMC document number: ds31925 rev. 4 - 2 1 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC complementary 40v high performance transistor features npn transistor ? bv ceo > 40v ? i c = 3a continuous collector current ? low saturation voltage (500mv max @ 1a) ? r sat = 195m? for a low equivalent on-resistance pnp transistor ? bv ceo > -40v ? i c = -3a continuous collector current ? low saturation voltage (-500mv max @ -1a) ? r sat = 350m? for a low equivalent on-resistance ? h fe characterized up to 2a for high current gain hold up ? low profile 0.8mm high package for thin applications ? r ja efficient, 40% lower than sot26 ? 6mm 2 footprint, 50% smaller than tsop6 and sot26 ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: w-dfn3020-8 type b ? nominal package height: 0.8mm ? case material: molded plastic. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - nipdau, solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) applications ? dc ? dc converters ? charging circuits ? power switches ? led backlighting circuits ? motor control ? portable applications ordering information (note 5) product compliance marking reel size (inches) tape width (mm) quantity per reel ZXTC4591AMCta aec-q101 91a 7 8 3,000 ZXTC4591AMCqta automotive 91a 7 8 3,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more info rmation about diodes incorpor ated?s definitions of halogen and antimony free,"green" and lead-free. 3. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capable. automotive, aec-q101 and standard products are electrical ly and thermally the same, except where specified. 5. for packaging details, go to our website at http://www.diodes.com marking information equivalent circuit top view bottom view w-dfn3020-8 t yp e b npn transistor pnp transistor 91a = product type marking code top view, dot denotes pin 1 c2 e 2 b2 c 1 e 1 b1 c2 c2 c1 c1 e2 b2 e1 b1 c1 c2 pin 1 bottom view pin out 91a e4
ZXTC4591AMC document number: ds31925 rev. 4 - 2 2 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC maximum ratings (@t a = +25c, unless otherwise specified.) parameter symbol npn pnp unit collector-base voltage v cbo 40 -40 v collector-emitter voltage v ceo 40 -40 emitter-base voltage v ebo 7 -7 peak pulse current i cm 3 -3 a continuous collector current (notes 6 & 9) i c 2 -1.5 (notes 7 & 9) 2.5 -2 base current i b 300 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol npn pnp unit power dissipation linear derating factor (notes 6 & 9) p d 1.5 12 w mw/ c (notes 7 & 9) 2.45 19.6 (notes 8 & 9) 1.13 8 (notes 8 & 10) 1.7 13.6 thermal resistance, junction to ambient (notes 6 & 9) r ja 83.3 c/w (notes 7 & 9) 51.0 (notes 8 & 9) 111 (notes 8 & 10) 73.5 thermal resistance, junction to lead (notes 9 & 11) r jl 17.1 operating and storage temperature range t j , t stg -55 to +150 c notes: 6. for a dual device surface mounted on 28mm x 28mm (8cm 2 ) fr4 pcb with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. t he heatsink is split in half with the exposed collector pads connected to each half. 7. same as note (6), except the device is measured at t <5 sec. 8. same as note (6), except the devic e is surface mounted on 31mm x 31mm (10cm 2 ) fr4 pcb with high coverage of single sided 1oz copper. 9. for a dual device with one active die. 10. for dual device with 2 active die running at equal power. 11. thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTC4591AMC document number: ds31925 rev. 4 - 2 3 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC thermal characteristics and derating information 0.1 1 10 0.01 0.1 1 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 100m 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 0.01 0.1 1 100us 8sqcm 2oz cu one active die 100ms 1s v ce(sat) limited 1ms npn safe operating area single pulse, t amb =25c dc 10ms i c collector current (a) v ce collector-emitter voltage (v) 10sqcm 1oz cu one active die 10sqcm 1oz cu two active die 8sqcm 2oz cu one active die derating curve max power dissipation (w) temperature (c) 8sqcm 2oz cu one active die d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz cu two active die 1oz cu one active die 2oz cu once active die 2oz cu two active die thermal resistance v board area thermal resistance (c/w) board cu area (sqcm) 1oz cu one active die 1oz cu two active die 2oz cu one active die 2oz cu two active die t amb =25c t j max =150c continuous power dissipation v board area p d dissipation (w) board cu area (sqcm) 8sqcm 2oz cu one active die single pulse, t amb =25c v ce(sat) limited pnp safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 100us 1ms 10ms 100ms 1s dc
ZXTC4591AMC document number: ds31925 rev. 4 - 2 4 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC npn - electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 40 - - v i c = 100a collector-emitter breakdown voltage (note 12) bv ceo 40 - - v i c = 10ma emitter-base breakdown voltage bv ebo 7 - - v i e = 100a collector cutoff current i cbo - - 100 na v cb = 30v emitter cutoff current i ebo - - 100 ?na v eb = 4v collector emitter cutoff current i ces - - 100 na v ce = 30v static forward current transfer ratio (note 12) h fe 300 300 200 35 - - - - - 900 - - - i c = 1ma, v ce = 5v i c = 500ma, v ce = 5v i c = 1a, v ce = 5v i c = 2a, v ce = 5v collector-emitter saturation voltage (note 12) v ce(sat) - - - - 300 500 mv i c = 0.5a, i b = 50ma i c = 1a, i b = 100ma base-emitter turn-on voltage (note 12) v be ( on ) - - 1.0 v i c = 1a, v ce = 5v base-emitter saturation voltage (note 12) v be ( sat ) - - 1.1 v i c = 1a, i b = 100ma output capacitance c obo - - 10 pf v cb = 10v, f = 1mhz transition frequency f t 150 - - mhz v ce = 10v, i c = 50ma, f = 100mhz notes: 12. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC4591AMC document number: ds31925 rev. 4 - 2 5 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC npn - typical electri cal characteristics (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10m 100m 1 0123 0.0 0.2 0.4 0.6 0.8 1m 10m 100m 1 0 200 400 600 800 1000 1200 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1.2 i c /i b =50 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =20 i c /i b =10 v ce(sat) (v) i c collector current (a) 150c v be(sat) v i c i c /i b =10 100c 25c -55c v ce(sat) (v) i c collector current (a) 150c h fe v i c v ce =5v -55c 25c 100c gain i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c v be(sat) (v) i c collector current (a) 150c v be(on) v i c v ce =5v 100c 25c -55c v be(on) (v) i c collector current (a)
ZXTC4591AMC document number: ds31925 rev. 4 - 2 6 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC pnp - electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -40 - - v i c = -100a collector-emitter breakdown voltage (note 12) bv ceo -40 - - v i c = -10ma emitter-base breakdown voltage bv ebo -7 - - v i e = -100a collector cutoff current i cbo - - -100 na v cb = -30v emitter cutoff current i ebo - - -100 ?na v eb = -4v collector emitter cutoff current i ces - - -100 na v ce = -30v static forward current transfer ratio (note 12) h fe 300 300 250 160 30 - - - - - - 800 - - - - i c = -1ma, v ce = -5v i c = -100ma, v ce = -5v i c = -500ma, v ce = -5v i c = -1a, v ce = -5v i c = -2a, v ce = -5v collector-emitter saturation voltage (note 12) v ce(sat) - - - - - - -200 -350 -500 mv i c = -0.1a, i b = -1ma i c = -0.5a, i b = -20ma i c = -1.0a, i b = -100ma base-emitter turn-on voltage (note 12) v be ( on ) - - -1.0 v i c = -1a, v ce = -5v base-emitter saturation voltage (note 12) v be ( sat ) - - -1.1 v i c = -1a, i b = -50ma output capacitance c obo - - 10 pf v cb = -10v, f = 1mhz transition frequency f t 150 - - mhz v ce = -10v, i c = -50ma, f = 100mhz notes: 12. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC4591AMC document number: ds31925 rev. 4 - 2 7 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC pnp - typical electrical characteristics (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10m 100m 1 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 1m 10m 100m 1 0 200 400 600 800 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 i c /i b =20 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =10 -v ce(sat) (v) -i c collector current (a) 150c v be(sat) v i c i c /i b =10 100c 25c -55c -v ce(sat) (v) -i c collector current (a) 150c h fe v i c v ce =5v -55c 25c 100c gain -i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c -v be(sat) (v) -i c collector current (a) 150c v be(on) v i c v ce =5v 100c 25c -55c -v be(on) (v) -i c collector current (a)
ZXTC4591AMC document number: ds31925 rev. 4 - 2 8 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. w-dfn3020-8 type b dim min max typ a 0.77 0.83 0.80 a1 0 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 2.95 3.075 3.00 d2 0.82 1.02 0.92 d4 1.01 1.21 1.11 e - - 0.65 e 1.95 2.075 2.00 e2 0.43 0.63 0.53 l 0.25 0.35 0.30 z - - 0.375 all dimensions in mm dimensions value (in mm) c 0.650 g 0.285 g1 0.090 x 0.400 x1 1.120 y 0.730 y1 0.500 y2 0.365 b e e2 d2 l d e a z a1 a3 d4 d4 c x1 g1 x y1 y y2 g
ZXTC4591AMC document number: ds31925 rev. 4 - 2 9 of 9 www.diodes.com october 2012 ? diodes incorporated a product line o f diodes incorporated ZXTC4591AMC important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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