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  1/5 XL0840 sensitive gate 0.8a scrs symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) ti = 55c 0.8 a i t(av) average on-state current (180 conduction angle) ti = 55c 0.5 a i tsm non repetitive surge peak on-state current tp = 8.3 ms tj = 25c 8a tp=10ms 7 i 2 ti 2 t value for fusing tp = 10 ms tj = 25c 0.24 a 2 s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100ns f = 60 hz tj = 125c 30 a/ m s i gm peak gate current tp = 20s tj = 125c 1 a p g(av) average gate power dissipation tj = 125c 0.1 w t stg t j storage junction temperature range operating junction temperature range -40to+150 -40to+125 c absolute ratings (limiting values) symbol value unit i t(rms) 0.8 a v drm 400 v i gt 200 a main features to-92 k g a g a k thanks to its highly sensitive triggering levels, the XL0840 device is suitable for all high volumes appli- cations where the available gate current is limited, such as christmas lights control. description www.kersemi.com
XL0840 2/5 symbol parameter value unit rth(j-a) junction to ambient (dc) 150 c/w rth(j-l) junction to lead (dc) 80 c/w thermal resistances symbol test conditions XL0840 unit i gt v d =12v r l =140 w max. 200 a v gt max. 0.8 v v gd v d =v drm r l =3.3k w r gk =1k w tj = 125c min. 0.1 v v rg i rg = 10a min. 8 v i h i t = 50ma r gk =1k w max. 5 ma i l i g = 1ma r gk =1k w max. 6 ma dv/dt v d =67% v drm r gk =1k w tj = 125c min. 75 v/ m s v tm i tm = 1.6a tp = 380s tj = 25c max. 1.95 v v to threshold voltage tj = 125c max. 1.0 v rd dynamic resistance tj = 125c max. 600 m w i drm v drm r gk =1k w tj = 25c max. 1 a tj = 125c 100 electrical characteristics (tj = 25c, unless otherwise specified) part number voltage sensitivity package XL0840 400v 200 a to-92 product selector x l 08 40 sensitive scr light control current:0.8a voltage: 40: 400v ordering information part number marking weight base quantity packing mode XL0840 XL0840 0.2 g 2500 bulk other information www.kersemi.com
XL0840 3/5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 tamb(c) a =180 d.c. it(av)(a) fig. 2-2: average and d.c. on-state current ver- sus ambient temperature (device mounted on fr4 with recommended pad layout). 1.e-02 1.e-01 1.e+00 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 tp(s) k=[zth(j-a)/rth(j-a)] fig. 3: relative variation of thermal impedance junction to ambient versus pulse duration. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 it(av)(a) a =180 p(w) 180 a a fig. 1: maximum average power dissipation ver- sus average on-state current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 tlead(c) a =180 d.c. it(av)(a) fig. 2-1: average and d.c. on-state current ver- sus lead temperature. 0 1 2 3 4 5 6 7 8 9 10 11 0.01 0.10 1.00 10.00 rgk(k ) w tj=25c ih [rgk] / ih [rgk=1k ] w fig. 5: relative variation of holding current versus gate-cathode resistance (typical values). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 tj(c) igt ih & il (rgk=1kw) igt, ih, il[tj] / igt, ih, il [tj=25c] fig. 4: relative variation of gate trigger current, holding current and latching current versus junc- tion temperature (typical values). www.kersemi.com
4/5 XL0840 0 1 2 3 4 5 0.10 1.00 10.00 rgk(k ) w tj=125c vd=270v dv/dt [rgk] / dv/dt [rgk=1k ] w fig. 6: relative variation of dv/dt immunity versus gate-cathode resistance (typical values). 0 1 2 3 4 5 6 7 8 9 10 1.00 10.00 cgk(nf) tj=125c vd=270v rgk=1kw dv/dt [cgk] / dv/dt [rgk=1k ] w fig. 7: relative variation of dv/dt immunity versus gate-cathode capacitance (typical values). 0 1 2 3 4 5 6 7 8 1 10 100 1000 number of cycles non repetitive tj initial=25c repetitive tlead=50c tp=10ms itsm(a) fig. 8: surge peak on-state current versus number of cycles. 0.1 1.0 10.0 100.0 0.01 0.10 1.00 10.00 tp(ms) tj initial=25c itsm i2t itsm(a), i t (a s) 22 fig. 9: non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- responding value of i 2 t. 0.01 0.10 1.00 10.00 0123456 vtm(v) tj=25c tj=125c tj max. : vto = 1.00 v rd = 600 m w itm(a) fig. 10: on-state characteristics (maximum val- ues). www.kersemi.com
5/5 XL0840 package mechanical data to-92 d f a e b a c ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.35 0.053 b 4.70 0.185 c 2.54 0.100 d 4.40 0.173 e 12.70 0.500 f 3.70 0.146 a 0.50 0.019 www.kersemi.com


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