?2016 fairchild semiconductor corporation 1 www.fairchildsemi.com fgh40t70shd rev. 1.0 fgh40t70shd 700 v, 40 a field stop trench igbt march 2016 absolute maximum ratings symbol description fgh40t70shd_f155 unit v ces collector to emitter voltage 700 v v ges gate to emitter voltage 20 v transient gate to emittervoltage 30 v i c collector current @ t c = 25 o c 80 a collector current @ t c = 100 o c 40 a i lm (1) pulsed collector current @ t c = 25 o c 120 a i cm (2) pulsed collector current 120 a i f diode forward current @ t c = 25 o c 40 a diode forward current @ t c = 100 o c 20 a i fm (2) pulsed diode maximum forward current 120 a p d maximum power dissipation @ t c = 25 o c 268 w maximum power dissipation @ t c = 100 o c 134 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c t c = 25c unless otherwise noted notes: 1. v cc = 400 v, v ge = 15 v, i c =120 a, r g = 30 , i nductive load 2. repetitive rating: pulse width limited by max. junction temperature fgh40t70shd 700 v, 40 a field stop trench igbt features ? maximum junction temperature : t j =175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) =1.7 v(typ.) @ i c = 40 a ? 100% of the parts tested for i lm (1) ? high input impedance ? fast switching ? tighten parameter distribution ?rohs compliant general description g e c collector (flange) e c g using novel field stop igbt tec hnology, fairchild?s new series of field stop 3 rd generation igbts offer the optimum performance for solar inverter, ups, welder, telecom, ess and pfc applica - tions where low conduction and swit ching losses are essential. applications ? solar inverter, ups, welder, telecom, ess, pfc
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 2 www.fairchildsemi.com fgh40t65shd rev. 1.0 thermal characteristics symbol parameter fgh40t70shd_f155 unit r jc (igbt) thermal resistance, junction to case, max. 0.56 o c /w r jc (diode) thermal resistance, junction to case, max. 1.71 o c /w r ja thermal resistance, junction to ambient, max. 40 o c /w package marking and ordering information part number top mark package packing method reel size tape width quantity fgh40t70shd_f155 fgh40t70shd to-247 g03 tube n/a n/a 30 electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1 ma 700 - - v bv ces / t j temperature coefficient of breakdown voltage i c = 1 ma, reference to 25 o c - 0.6 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 40 ma, v ce = v ge 4.0 5.5 7.5 v v ce(sat) collector to emitter saturation voltage i c = 40 a , v ge = 15 v - 1.7 2.15 v i c = 40 a , v ge = 15 v, t c = 1 75 o c - 2.37 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1mhz - 2028 - pf c oes output capacitance - 75 - pf c res reverse transfer capacitance - 26 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 6 , v ge = 15 v, inductive load, t c = 25 o c - 22 - ns t r rise time - 40 - ns t d(off) turn-off delay time - 66 - ns t f fall time - 10 - ns e on turn-on switching loss - 1150 - uj e off turn-off switching loss - 271 - uj e ts total switching loss - 1421 - uj t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 6 , v ge = 15 v, inductive load, t c = 175 o c - 20 - ns t r rise time - 36 - ns t d(off) turn-off delay time - 68 - ns t f fall time - 13 - ns e on turn-on switching loss - 1760 - uj e off turn-off switching loss - 455 - uj e ts total switching loss - 2215 - uj
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 3 www.fairchildsemi.com fgh40t70shd rev. 1.0 electrical characteristi cs of the igbt (continued) symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400 v, i c = 40 a, v ge = 15 v - 69 - nc q ge gate to emitter charge - 13 - nc q gc gate to collector charge - 26 - nc electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20 a t c = 25 o c - 2.0 2.5 v t c = 175 o c - 1.73 - e rec reverse recovery energy i f =20 a, di f /dt = 200 a/ s t c = 175 o c - 54 - uj t rr diode reverse recovery time t c = 25 o c - 37 - ns t c = 175 o c - 235 - q rr diode reverse recovery charge t c = 25 o c - 65 - nc t c = 175 o c - 944 -
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 4 www.fairchildsemi.com fgh40t65shd rev. 1.0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. saturation voltage vs. case characteristics temperature at variant current leve l figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 012345 0 30 60 90 120 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 30 60 90 120 t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 20v 15v 12v 10v v ge = 8v 012345 0 30 60 90 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] -100 -50 0 50 100 150 200 1 2 3 4 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emitter case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] i c = 20a 40a 80a
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 5 www.fairchildsemi.com fgh40t65shd rev. 1.0 typical performance characteristics figure 7. capacitance characteristics figure 8. gate charge characteristics figure 9. turn-on characteristics vs. figure 10. turn-off characteristics vs. gate resistance gate resistance figure 11. switching loss vs. figure 12. turn-on characteristics vs. gate resistance collector current 110 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 20406080 0 3 6 9 12 15 common emitter t c = 25 o c 300v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 1020304050 5 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ : ] 0 1020304050 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ : ] 0 1020304050 100 1000 5000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ : ] 20 40 60 80 5 10 100 common emitter v ge = 15v, r g = 6 : t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a]
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 6 www.fairchildsemi.com fgh40t65shd rev. 1.0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. switching loss vs. collector current collector current f i g u r e 1 5 . l o a d c u r r e n t v s . f r e q u e n c y f i g u r e 1 6 . s o a c h a r a c t e r i s t i c s f i g u r e 1 7 . f o r w a r d c h a r a c t e r i s t i c s f i g u r e 1 8 . r e v e r s e r e c o v e r y c u r r e n t 20 40 60 80 1 10 100 500 common emitter v ge = 15v, r g = 6 : t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 20 40 60 80 100 1000 10000 common emitter v ge = 15v, r g = 6 : t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a] 1k 10k 100k 1m 0 50 100 150 200 250 t c = 75 o c t c = 25 o c t c = 100 o c square wave t j <= 175 o c, d = 0.5, v ce = 400v v ge = 15/0v, r g = 6 : collector current, [a] switching frequency, f[hz] 1 10 100 1000 0.1 1 10 100 300 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 p s 100 p s collector current, i c [a] collector-emitter voltage, v ce [v] 012345 1 10 80 t c = 75 o c t c = 25 o c t c = 25 o c t c = 75 o c t c = 175 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] 0 10203040 0 2 4 6 8 10 t c = 25 o c t c = 175 o c --- di/dt = 100a/ p s di/dt = 200a/ p s di/dt = 100a/ p s di/dt = 200a/ p s reverse recovery currnet, i rr [a] forward current, i f [a]
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 7 www.fairchildsemi.com fgh40t65shd rev. 1.0 typical performance characteristics figure 19. reverse recovery time figure 20. stored charge figure 21.trans ient thermal impedance of igbt figure 22.transient thermal impedance of diode 0 10203040 0 70 140 210 280 350 t c = 25 o c t c = 175 o c --- di/dt = 200a/ p s di/dt = 100a/ p s reverse recovery time, t rr [ns] forward current, i f [a] 0 10203040 0 300 600 900 1200 t c = 25 o c t c = 175 o c --- di/dt = 200a/ p s di/dt = 100a/ p s stored recovery charge, q rr [nc] forward current, i f [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.005 0.01 0.1 0.6 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 8 www.fairchildsemi.com fgh40t65shd rev. 1.0 mechanical dimensions figure 23. to-247 3l - to-247,mol ded,3 leads,jedec ab long leads package drawings are provided as a service to customers considering fairchild comp onents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to247-0a3
fgh40t70shd 700 v, 40 a field stop trench igbt ?2016 fairchild semiconductor corporation 9 www.fairchildsemi.com fgh40t70shd rev. 1.0 product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. accupower? 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truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? xsens? ? ? *trademarks of system general corporation, used under license by fairchild semiconductor. ? ? rev. i77 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. to obtain the latest, most up-to-date datasheet and pr oduct information, visit our website at http://www.fairchildsemi.com . fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it co nvey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fair child?s worldwide terms and conditions, specifically the warranty therein, which covers these products. tm ? 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