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to-220ab irl40b212 s d g g d s gate drain source base part number package type standard pack form quantity irl40b212 to-220 tube 50 irl40b212 orderable part number IRL40S212 d 2 -pak tape and reel 800 IRL40S212 strong ir fet? irl40b212 IRL40S212 application ? ? brushed motor drive applications ? ? bldc motor drive applications ? ? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters fig 2. maximum drain current vs. case temperature fig 1. typical on? resistance vs. gate voltage s d g d 2 -pak IRL40S212 1 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 d s g ? v dss 40v r ds(on) typ. 1.5m ?? max 1.9m ?? i d (silicon limited) 254a ? i d (package limited) 195a hexfet ? power mosfet 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c benefits ? ???? optimized for logic level drive ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free ? ? rohs compliant, halogen-free
? irl40b212/IRL40S212 2 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.65 r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ? ??? 62 c/w ? r ? ja junction-to-ambient (pcb mount) ? ??? 40 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 254 ? a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 179 ? i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 195 i dm pulsed drain current ?? 990 * ? p d @t c = 25c maximum power dissipation 231 w linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 342 mj e as (thermally limited) single pulse avalanche energy ?? 790 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c reference to 25c, i d = 2ma ? r ds(on) ??? 1.5 1.9 m ??? v gs = 10v, i d = 100a ? ??? 1.9 2.4 v gs = 4.5v, i d = 50a ? v gs(th) gate threshold voltage 1.0 ??? 2.4 v v ds = v gs , i d = 150a i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 40 v, v gs = 0v ??? ??? 150 v ds = 40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 1.6 ??? ?? static drain-to-source on-resistance notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current lim it is 195a. note that current limitations arising fr om heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width limited by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 0.07mh, r g = 50 ? , i as = 100a, v gs =10v. ? i sd ? 100a, di/dt ? 950a/s, v dd ? v (br)dss , t j ? 175c. ? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ?? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss ? r ? is measured at t j approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 40a, v gs =10v. ? * pulse drain current is limited at 780a by source bonding technology.
? irl40b212/IRL40S212 3 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 256 ??? ??? s v ds = 10v, i d = 100a q g total gate charge ??? 91 137 nc ? i d = 100a q gs gate-to-source charge ??? 25 ??? v ds = 20v q gd gate-to-drain charge ??? 46 ??? v gs = 4.5v ? q sync total gate charge sync. (qg? qgd) ??? 45 ??? t d(on) turn-on delay time ??? 39 ??? ns v dd = 20v t r rise time ??? 154 ??? i d = 30a t d(off) turn-off delay time ??? 88 ??? r g = 2.7 ?? t f fall time ??? 84 ??? v gs = 4.5v ? c iss input capacitance ??? 8320 ??? pf ? v gs = 0v c oss output capacitance ??? 1050 ??? v ds = 25v c rss reverse transfer capacitance ??? 790 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 1250 ??? v gs = 0v, vds = 0v to 32v ? c oss eff.(tr) output capacitance (time related) ??? 1580 ??? v gs = 0v, vds = 0v to 32v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 254 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 990* ? integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? ??? 6.0 ??? v/ns t j = 175c,i s = 100a,v ds = 40v t rr reverse recovery time ??? 30 ??? ns t j = 25c v dd = 34v ??? 32 ??? t j = 125c i f = 100a, q rr reverse recovery charge ??? 26 ??? nc t j = 25c di/dt = 100a/s ??? ??? 28 ??? t j = 125c ? i rrm reverse recovery current ??? 1.4 ??? a t j = 25c ? d s g
? irl40b212/IRL40S212 4 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs.gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 6.0v 4.5v 4.0v 3.75v bottom 3.25v ? 60s pulse width tj = 25c 3.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 3.25v vgs top 15v 10v 8.0v 6.0v 4.5v 4.0v 3.75v bottom 3.25v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 250 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v v ds = 8v i d = 100a
? irl40b212/IRL40S212 5 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 fig 10. maximum safe operating area fig 9. typical source-drain diode forward voltage fig 13. typical on? resistance vs. drain current fig 11. drain-to-source breakdown voltage fig 12. typical c oss stored energy 0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 40 42 44 46 48 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 2.0ma -5 0 5 10 15 20 25 30 35 40 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 e n e r g y ( j ) 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 3.5v vgs = 4.5v vgs = 6.0v vgs = 8.0v vgs = 10v 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by rds(on) 100sec dc limited by package
? irl40b212/IRL40S212 6 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figure 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a
? irl40b212/IRL40S212 7 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 17. threshold voltage vs. temperature fig 18. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 1 2 3 4 5 6 7 8 9 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 1 2 3 4 5 6 7 8 9 i r r m ( a ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 20 40 60 80 100 120 140 160 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 20 40 60 80 100 120 140 160 q r r ( n c ) i f = 100a v r = 34v t j = 25c t j = 125c
? irl40b212/IRL40S212 8 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? irl40b212/IRL40S212 9 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application .
? irl40b212/IRL40S212 10 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) d 2 pak (to-263ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code
? irl40b212/IRL40S212 11 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? irl40b212/IRL40S212 12 www.irf.com ? 2015 international rectifier submit datasheet feedback april 27, 2015 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? to-220 n/a d 2 pak msl1 rohs compliant yes moisture sensitivity level ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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