f112r6a050sc target datasheet flowpack 1 1200v/50a inverter, blocking diodes very compact housing, easy to route igbt4 technology power regeneration 10-f112r6a050sc-m430e08 10-F112R6A050SC01-M430E18 t j =25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v maximum junction temperature t j max 150 c inverter transistor t sc t j 150c 10 s v cc v ge =15v 900 v 20 150 60 100 t h =80c 50 t h =80c 95 700 w a v c 175 v ce i c v ge i cpulse t j max 150 a 1200 a v t j =t j max t j =t j max vce 1200v, tj top max t p limited by t j max t h =80c t h =80c turn off safe operating area collector-emitter break down voltage dc collector current power dissipation per igbt maximum junction temperature short circuit ratings repetitive peak collector current t j =t j max t p =10ms t j =t j max p tot a features flow1 housing target applications schematic dc forward current surge forward current t j =25c 2450 types i2t-value maximum ratings i fav a 2 s i fsm condition blocking diode a w power dissipation per diode i 2 t p tot gate-emitter peak voltage 1 revi sion: 3 copyright by vincotech
f112r6a050sc target datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition inverter diode thermal properties insulation properties v is t=2s dc voltage 4000 v min 12.7 mm min 12.7 mm cti >200 t h =80c 38 t h =80c 18 1200 t j max i frm p tot v repetitive peak forward current power dissipation per diode maximum junction temperature peak repetitive reverse voltage w 175 c t j =t j max a i f v rrm t j =25c a 30 t j =t j max t p limited by t j max dc forward current -40?+(tjmax - 25) c storage temperature t stg -40?+125 c comparative tracking index insulation voltage creepage distance t op operation temperature under switching condition clearance 2 revi sion: 3 copyright by vincotech
f112r6a050sc target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 1.11 1.7 t j =125c 1.04 t j =25c 0.91 t j =125c 0.78 t j =25c 4 t j =125c 5 t j =25c 0.05 t j =125c 1.1 thermal resistance chip to heatsink per chip r thjh 0.74 thermal resistance chip to heatsink per chip r thjc 0.49 t j =25c 5 5.8 6.5 t j =150c t j =25c 1.86 2.3 t j =150c 2.3 t j =25c 0.02 t j =150c t j =25c 200 t j =150c t j =25c 104 t j =150c 100 t j =25c 19 t j =150c 23.8 t j =25c 220 t j =150c 295 t j =25c 78 t j =150c 118 t j =25c 2.86 t j =150c 4.5 t j =25c 2.69 t j =150c 4.48 thermal resistance chip to heatsink per chip r thjh 0.58 thermal resistance chip to case per chip r thjc 0.38 t j =25c 1.35 1.90 2.35 t j =150c 1.91 t j =25c t j =150c 16.06 t j =25c t j =150c 433.4 t j =25c t j =150c 2.75 di ( rec ) max t j =25c /d t t j =150c 109 t j =25c t j =150c 1.16 thermal resistance chip to heatsink per chip r thjh 2.52 ther mal resistance chip to case per chip r thjc tbd. thermal grease thickness 50um = 1 w/mk 4 tj=25c 290 2770 v 15 15 0 t r t d(off) v ce =v ge thermal grease thickness 50um = 1 w/mk q gate erec c oss c rss q rr t rr i ges t f e on e off t d(on) i rrm v f v ge(th) v ce(sat) i ces r gint input capacitance output capacitance turn-off energy loss per pulse integrated gate resistor inverter transistor gate emitter threshold voltage value conditions characteristic values forward voltage threshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t blocking diode 50 50 50 k/w v v m ? ma reverse current i r c mws a/ s k/w f=1mhz rgon=8 ? 0 20 15 rgoff=8 ? 15 15 15 turn-on energy loss per pulse reverse recovered charge inverter diode peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge c ies reverse recovery time reverse recovered energy peak rate of fall of recovery current collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current collector-emitter saturation voltage 1200 25 0 960 50 50 0.0017 600 600 1600 thermal grease thickness 50um = 1 w/mk rgon=8 ? 160 v ns a nc na k/w v 205 mws ns pf ma ? tj=25c 3 revisio n: 3 copyright by vincotech
f112r6a050sc target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value conditions characteristic values g nm weight g tbd. 44.2nm terminal connection torque m 6.7 7 7.4 mounting torque m 3.8 5nh chip module lead resistance, terminals -chip r cc'1+ee' tbd. m ? module stray inductance l sce thermal resistance, case to heatsink r thch tbd. k/w module properties b tj=25c vincotech ntc reference b-value tol. 3% 3950 k b (25/100) tj=25c 3996 k tj=25c b-value b (25/50) tol. 3% % ? 22000 5 -5 2 200 mw/k power dissipation p mw rated resistance r power dissipation constant deviation of r100 r/r r100=1486 ? thermistor tj=25c tc=100c tc=100c tj=25c 4 revisio n: 3 copyright by vincotech
f112r6a050sc target datasheet version ordering code in datamatrix as in packaging barcode as 12mm housing 10-f112r6a050sc-m430e08 m430-e08 m430-e08 12mm housing, without thermistor 10-F112R6A050SC01-M430E18 m430-e18 m430-e18 outline pinout ordering code & marking ordering code and marking - outline - pinout 5 revi sion: 3 copyright by vincotech
f112r6a050sc target datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. 6 revisi on: 3 copyright by vincotech
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