CHA2193 rohs compliant ref. : dsCHA21939042-11 feb 99 1/10 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 20-30ghz low noise amplifier gaas monolithic microwave ic description the CHA2193 is a three stages low noise amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc grounds. this helps simplify the assembly process. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features 2.0 db noise figure 18 db 1db gain 8 dbm output power (-1db gain comp.) very good broadband input matching dc power consumption, 60ma @ 3.5v chip size : 2.07 x 1.03 x 0.10 mm 0 2 4 6 8 10 12 14 16 18 20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 frequency ( ghz ) nf (db) gain (db) typical on wafer measurements main characteristics tamb. = 25c symbol parameter min typ max unit fop operating frequency range 20 30 ghz g small signal gain 16 18 db nf noise figure 2.0 2.5 db p1db output power at 1db gain compression 6 8 dbm id bias current 60 100 ma esd protection : electrostatic discharge sensitive device. observe handling precautions !
CHA2193 20-30ghz low noise amplifier ref. : dsCHA21939042-11 feb 99 2/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics for narrowband operation tamb = +25c, vd = 3.5v symbol parameter min typ max unit fop operating frequency range (1) 24 26 ghz g small signal gain (1) 16 18 db d g small signal gain flatness (1) 0.5 db is reverse isolation (1) 25 30 db nf noise figure 2.0 2.5 db p1db cw output power at 1db compression (1) 6 8 db m vswrin input vswr (1) 1.8:1 2.0:1 vswrout output vswr (1) 1.8:1 2.0:1 vd dc voltage 3.5 4 v id bias current 60 100 ma (1) these values are representative for cw on-wafer measurements that are made without bonding wires at the rf ports. absolute maximum ratings tamb. = 25c (1) symbol parameter values unit vd drain bias voltage 4.0 v id drain bias current 120 ma vg gate bias voltage -2.0 to +0.4 v pin maximum peak input power overdrive (2) +15 dbm ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +155 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s.
20-30ghz low noise amplifier CHA2193 ref. : dsCHA21939042-11 feb 99 3/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 this low noise amplifier can also be used for broad band operation following the relaxed characteristics shown below. electrical characteristics for broadband operation tamb = +25c, vd = 3.5v symbol parameter min typ max unit fop operating frequency range (1) 20 30 ghz g small signal gain (1) 16 18 db d g small signal gain flatness (1) 1 db is reverse isolation (1) 25 30 db nf noise figure 2.0 2.5 db p1db cw output power at 1db compression (1) 6 8 db m vswrin input vswr (1) 2.0:1 3.0:1 vswrout output vswr (1) 2.0:1 3.0:1 vd dc voltage 3.5 4 v id bias current 60 100 ma (1) these values are representative for cw on-wafer measurements that are made without bonding wires at the rf ports.
CHA2193 20-30ghz low noise amplifier ref. : dsCHA21939042-11 feb 99 4/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer scattering parameters and noise fi gure bias conditions : vd = +3.5v, id = 60 ma freq. ghz s11 db s11 / // / s12 db s12 / // / s21 db s21 / // / s22 db s22 / // / nf 1 -0,09 -14,32 -80,74 113,11 -40,30 169,78 -15,37 - 135,30 2 -0,12 -28,71 -81,92 -0,74 -40,82 119,08 -9,93 -13 1,21 3 -0,14 -43,08 -77,35 25,09 -42,54 77,54 -6,93 -141 ,01 4 -0,18 -57,94 -83,41 -166,09 -51,25 127,54 -5,91 - 155,93 5 -0,22 -72,91 -67,79 -40,02 -28,44 41,42 -5,58 -15 4,39 6 -0,26 -88,98 -76,58 -160,06 -33,45 -69,76 -5,08 - 162,37 7 -0,34 -105,52 -79,08 -134,17 -21,80 -126,19 -4,76 -170,76 8 -0,50 -123,88 -75,04 -97,32 -10,72 177,68 -4,83 - 176,52 9 -0,92 -143,90 -69,60 -106,78 -1,62 126,62 -5,16 1 79,09 10 -1,82 -164,35 -66,24 173,75 5,69 71,35 -5,45 176 ,68 11 -2,71 178,27 -65,98 101,28 10,50 13,83 -5,68 174 ,06 12 -2,83 157,47 -62,37 32,22 13,30 -36,97 -5,92 171 ,52 13 -3,00 128,18 -58,73 -15,96 15,32 -81,84 -6,28 16 8,03 14 -3,85 90,80 -55,58 -61,72 16,80 -124,31 -6,59 16 4,79 2,75 15 -5,36 48,78 -53,10 -89,73 17,51 -164,61 -7,18 16 1,05 16 -7,12 6,24 -50,87 -128,11 17,54 159,88 -7,81 158 ,07 2,39 17 -8,37 -33,74 -50,28 -153,61 17,30 130,36 -8,91 1 55,99 18 -8,54 -68,42 -49,79 -174,52 17,28 104,28 -9,46 1 53,50 2,52 19 -8,48 -96,54 -49,80 165,50 17,39 80,17 -10,19 15 1,85 20 -8,44 -120,79 -50,15 150,57 17,41 58,32 -10,77 1 48,38 1,96 21 -8,67 -140,98 -51,37 138,76 17,89 34,39 -11,68 1 42,69 22 -9,07 -161,02 -50,08 131,82 18,09 10,95 -12,83 1 36,93 1,89 23 -10,37 -177,31 -49,49 119,58 18,30 -12,07 -14,17 132,50 24 -12,87 172,65 -49,57 101,38 18,57 -33,78 -15,50 126,88 1,83 25 -14,41 172,94 -50,14 91,56 19,00 -57,79 -17,55 1 16,56 26 -16,02 -179,78 -49,34 75,10 19,05 -80,79 -19,49 105,05 1,74 27 -15,80 -170,46 -50,03 60,07 19,19 -103,36 -21,66 82,30 1,72 28 -13,84 -161,36 -50,36 40,82 19,29 -126,71 -24,61 56,13 1,72 29 -11,86 -164,84 -51,41 23,31 19,21 -149,27 -23,32 16,43 1,66 30 -10,90 -170,62 -52,60 10,51 19,11 -171,38 -23,04 5,95 1,82 31 -9,43 -175,48 -51,86 -9,98 19,24 165,57 -20,98 - 11,15 1,90 32 -8,16 176,47 -54,05 -26,91 19,20 141,50 -21,22 - 10,65 1,86 33 -7,04 168,81 -52,64 -39,12 18,93 116,42 -20,33 - 13,52 2,13 34 -6,00 159,28 -55,11 -64,75 18,67 91,00 -18,22 5, 77 35 -4,99 150,58 -53,15 -62,66 18,15 63,85 -15,72 6, 40 36 -4,01 139,72 -52,03 -79,29 17,22 35,89 -12,74 9, 57 37 -3,08 128,47 -51,22 -91,36 15,94 8,86 -9,98 8,08 38 -2,41 115,71 -52,00 -110,30 14,33 -17,74 -8,05 4 ,67 39 -2,00 104,97 -56,87 -132,32 12,28 -42,47 -6,44 - 0,77 40 -1,45 92,23 -49,81 -37,13 10,30 -66,02 -5,17 -7, 26
20-30ghz low noise amplifier CHA2193 ref. : dsCHA21939042-11 feb 99 5/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measurements bias conditions: tamb = +25c, vd = 3.5v, vg1 = vg2 , id = 60ma -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 20 21 22 23 24 25 26 27 28 29 30 31 32 33 frequency (ghz) gain, rloss (db) gain s11 s22 0 1 2 3 4 5 20 21 22 23 24 25 26 27 28 29 30 31 32 33 frequency (ghz) noise figure (db)
CHA2193 20-30ghz low noise amplifier ref. : dsCHA21939042-11 feb 99 6/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on jig measurements bias conditions: tamb = +25c, vd = 3.5v, vg1 = vg2 , id = 60ma -30 -25 -20 -15 -10 -5 0 5 10 15 20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 frequency (ghz) gain, rloss (db) gain s11 s22 0 2 4 6 8 10 12 14 16 18 20 22 24 20 20.5 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 frequency (ghz) gain (db) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 noise figure (db) gain nf
20-30ghz low noise amplifier CHA2193 ref. : dsCHA21939042-11 feb 99 7/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 input power (dbm) gain & output power gain (db) pout (dbm) typical bias tuning for low noise operation for low noise operation, a separate access to the g ate voltages of the first stage ( vgs1 ), and of th e second and third stages ( vgs2 ) is provided. nominal bias for low noise operation is obtained fo r a typical current of 20 ma for the second and thi rd stages and 10 ma for the first stage ( 50 ma for th e amplifier ). the first step to bias the amplifier is to tune the vgs1 = -1v, and vgs2 to drive 40 ma for the full amplifier. then vgs1 is reduced to obtain 50 ma of current through the amplifier. a fine tuning of the noise figure may be obtained b y modifying the vgs1 bias voltage, but keeping the previous value for vgs2.
CHA2193 20-30ghz low noise amplifier ref. : dsCHA21939042-11 feb 99 8/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly 1 to 10nf note: supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
20-30ghz low noise amplifier CHA2193 ref. : dsCHA21939042-11 feb 99 9/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 mechanical data bonding pad positions. (chip thickness: 100m. all dimensions are in micro meters)
CHA2193 20-30ghz low noise amplifier ref. : dsCHA21939042-11 feb 99 10/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : CHA2193-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsability for the consequences of u se of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or o therwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publicat ion supersedes and replaces all information previou sly supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical co mponents in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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