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TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 1 features ? ingap hbt technology ? high efficiency: 41% cdma ? low leakage current: < 1ua ? low icq = 55ma ? supports new chipsets with vref @ 2.6v ? capable of running as 0-bit pa in low bias mode to 28dbm ? optimized for 50 ? system ? small 10 pin 4x4mm module ? excellent rx band noise performance ? cdma 1xrtt, 1xev-do compliant ? full esd protection applications ? is-95 / cdma2000 ? single mode, dual mode, and tri mode cdma/amps phones package style 4mm x 4mm lga package functional block diagram product description the TQM713019 is a 3v, 2 stage gaas hbt power amplifier module designed for use in mobile phones. its extremely small 4x4mm package makes it ideal for today?s compact data enabled phones. its rf performance meets the requirements for products designed to is-95/98 standards. the TQM713019 is designed on triquint?s advanced ingap hbt gaas technology offering state of the art reliability, temperature stability, and ruggedness. selectable bias mode and a shutdown mode with low leakage current improves talk and standby time. the output match, realized within the module package, optimizes efficiency/linearity at maximum rated output power. the module is a 4x4mm land grid array with backside ground. the TQM713019 is footprint compatible with industry standard 4x4mm cdma pa modules. electrical specifications p a r a m e t e r m i n ty p max units frequenc y 8 2 4 8 4 9 mhz cdma mode max i mum pout 1 2 8 d b m g a i n 2 9 d b cdma acpr 50 dbc cdma altr 65 dbc power supply current @ 28dbm 450 ma i ref 2 . 0 m a rx band nois e -140 dbm/hz 6 7 8 9 10 5 4 3 2 1 v cc1 rfin gnd vmode vref v c c 2 gnd rfout gnd gnd 1 b it bias control not e 1 : cdma mode: v cc1 =3.4vdc, v cc2 =3.4vdc, v ref =2.85vdc, tc=25c data sheet: subject to change without notice
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 2 absolute maximum ratings symbol parameter absolute maximum value units p in rf input power 10 dbm v cc supply voltage 0.0 to 5.0 v dc v ref referenc e voltage 0.0 to 3.5 v dc v mode vmode (1 bit bias control) 0.0 to 3.5 v dc t case cas e operating temperature -40 to +100 c t store storage temperature -55 to +150 c note: the part may not s u rv iv e all max i mums applied s i multaneous ly . recommended operating conditions s y m b o l p a r a m e t e r m i n . t y p / n o m m a x . u n i t s v cc supply voltage 3.2 3.4 4.2 v dc v ref referenc e voltage pa on 2.70 2.85 2.95 v dc pa off 0 <0.5 - v dc v mode vmode (1 bit bias control) high bias mode 0 - 0.5 v dc low bias mode 2.5 2.85 3.0 v dc t case cas e operating temperature -30 25 +85 oc power range truth table p a r a m e t e r v ref v mode range high power 2.85 v low 16 dbm ? 28 dbm low power 2.85 v high < 16 dbm shut down 0.0 v low - data sheet: subject to change without notice
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 3 cdma (is-98c) electrical characteristics 1, 2 p a r a m e t e r c o n d i t i o n s m i n . t y p / n o m m a x . u n i t s rf frequenc y 824 849 mhz large signal gain v cc = 3.2 to 4.2v; v ref = 2.85v; -30 oc < temp < 85oc pout = +28 dbm 25 29 33 db pout = +16 dbm 23 27 db adjac ent channel power (acpr1) v cc = 3.2 to 4.2v; v ref = 2.85v; -30 oc < temp < 85oc +16dbm pout +28dbm -50 -45 dbc pout +16dbm -52 -45 dbc adjac ent channel power (acpr2) v cc = 3.2 to 4.2v; v ref = 2.85v; -30 oc < temp < 85oc +16dbm pout +28dbm - 6 0 - 5 7 dbc pout +16dbm -65 -57 dbc quies c ent current v cc = 3.4v; v ref = 2.85v; v mode = 2.85v ; temp = 25 oc 55 ma i ref pout = +28dbm; v cc = 3.4v; v ref = 2.85v; v mode = 0v; temp = 25oc 2 3 m a i mode all conditions 75 ua pae pout = +28dbm; v cc = 3.4v; v re f = 2.85v; v mode = 0v; temp = 25oc 4 1 % pae pout = +16dbm; v cc = 3.4v; v re f = 2.85v; v mode = 2.85v; temp = 25oc 9 . 5 % input vswr all terminals 1.5 :1 2.0 :1 harmonic s p o u t +28dbm 2fo -50 -40 dbc 3fo -65 -40 dbc spurious / stability pout +28dbm; 10:1 vswr; v cc = 3.2 to 4.2v; -30 oc < temp < 85oc - 6 5 dbc ruggednes s 10:1 vswr; pin = +10dbm; -30 oc < temp < 85oc no degradation nois e power in rx band pout = +28dbm, is-95 standard -140 -135 dbm/hz note 1: test condit i ons: v cc =3.4v dc , v ref =2. 85v dc , t c = 25 c unless ot herwise specif ied note 2 : triquint test board data sheet: subject to change without notice
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 4 cdma2000 (is-98d) electrical characteristics 1, 2, 3 p a r a m e t e r c o n d i t i o n s m i n . t y p / n o m m a x . u n i t s rf frequenc y 824 849 mhz large signal gain v cc = 3.2 to 4.2v; v ref = 2.85v; -30 oc < temp < 85oc pout = +27.5 dbm 25 28.5 db pout = +16 dbm 23 27 db adjac ent channel power (acpr1) v cc = 3.2 to 4.2v; v ref = 2.85v; -30 oc < temp < 85oc +16dbm pout +27.5dbm -50 -45 dbc pout +16dbm -55 -45 dbc adjac ent channel power (acpr2) v cc = 3.2 to 4.2v; v ref = 2.85v; -30 oc < temp < 85oc +16dbm pout +27.5dbm - 6 0 - 5 7 dbc pout +16dbm -65 -57 dbc quies c ent current v cc = 3.4v; v ref = 2.85v; v mode = 2.85v ; temp = 25 oc 55 ma i ref pout = +27.5dbm; v cc = 3.4v; v ref = 2.85v; v mode = 0v; temp = 25oc 2 3 m a i mode all conditions 75 ua pae pout = +27.5dbm; v cc = 3.4v; v re f = 2.85v; v mode = 0v; temp = 25oc 4 0 % pae pout = +16dbm; v cc = 3.4v; v re f = 2.85v; v mode = 2.85v; temp = 25oc 9 . 5 % input vswr all terminals 1.5 :1 2.0 :1 nois e power in rx band pout = +28dbm, is-95 standard -140 -135 dbm/hz note 1: test condit i ons: v cc =3.4v dc , v ref =2. 85v dc , t c = 25 c unless ot herwise specif ied note 2 : triquint test board note 3 : 9600 bps fundamental and supplemental traffic channels (0 db), peak-to- average ratio (ccdf=1% ) = 4.5db amps mode electrical characteristics 1, 2 p a r a m e t e r c o n d i t i o n s m i n . t y p / n o m m a x . u n i t s rf frequenc y 824 849 mhz high power output, pout 31.5 dbm large signal gain 27.5 db pae pout = 31.5dbm; v cc = 3.4v; temp = 25oc 50 57 % note 1: test condit i ons: v cc =3.4v dc , v ref =2. 85v dc , t c = 25 c unless ot herwise not ed note 2: triquint test board data sheet: subject to change without notice
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module data sheet: subject to change without notice for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 5 pin out and assignments 6 7 8 9 10 5 4 3 2 1 1 b i t b i a s c o n t r o l vref gnd vmode gnd gnd rfout rfin gnd vcc1 vcc2 pin symbol description 1 v ref regulated voltage for bias setting. v ref is set to 0v dc to power off the TQM713019 2 v mode 1 step bias control 3 g n d g r o u n d 4 r f in rf input. the rf circuit is dc grounded internally 2 . 50 ohm rf impedance. 5 v cc1 collector voltage for input stage 6 v cc2 collector voltage for output stage 7 g n d g r o u n d 8 r f out rf output. the rf circuit is dc blocked internally. 50 ohm rf impedance 9 g n d g r o u n d 1 0 g n d g r o u n d paddle 1 gnd device ground and thermal path for heat removal note 1: tr iquint r e commends t he use of sever a l via holes t o t he backside gr ound under t he paddle note2: i n t e rnal dc ground f o r rf in rfi n
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 6 typical performance test condit i ons (unless ot herwise specif ied): v cc =3.4v dc , v ref =2. 85v dc , v mode = 0 or 2. 85v dc , p out =28. 0 or 16dbm icc @ 836m h z ( i s - 95 c d m a ) 0 100 200 300 400 500 600 0 2 4 6 8 1 0 1 21 4 1 61 8 2 02 2 2 42 6 2 8 po u t ( d b m ) i cc ( m a ) - 30c 25c 85c p a e @ 836m h z ( i s - 95 c d m a ) 0.0 10.0 20.0 30.0 40.0 50.0 0 2 4 6 8 1 01 2 1 4 1 61 8 2 02 2 2 42 6 2 8 po u t ( d b m ) pa e ( % ) - 30c 25c 85c acp r @ 8 3 6 m hz ( i s - 9 5 cdm a) -7 0 -6 5 -6 0 -5 5 -5 0 -4 5 -4 0 0 2 4 6 8 1 0 1 21 41 6 1 82 0 2 22 4 2 62 8 po u t ( d b m ) acp r ( d bc ) - 30c 25c 85c a l t r @ 836m h z ( i s - 95 c d m a ) -8 0 -7 5 -7 0 -6 5 -6 0 -5 5 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 po u t ( d b m ) al t r ( d bc ) - 30c 25c 85c data sheet: subject to change without notice
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 7 typical performance (continued) g a in @ 836m h z ( i s - 95 c d m a ) 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 po u t ( d b m ) g a in ( d b ) - 30c 25c 85c pa e @ po u t = 2 8 d b m ( i s- 9 5 c d m a ) 38. 0 40. 0 42. 0 44. 0 46. 0 48. 0 50. 0 824 829 834 839 844 849 fr e q ( m h z ) pa e ( % ) 350 375 400 425 450 475 500 icc ( m a ) 85 c 25 c -3 0 c pa e @ po u t = 1 6 d b m ( i s- 9 5 c d m a ) 2.0 4.0 6.0 8.0 10.0 12.0 824 829 834 839 844 849 fr e q ( m h z ) pa e ( % ) 100 110 120 130 140 150 icc ( m a ) 85 c 25 c -3 0 c a c p r an d a l t r @ p o u t = 28d b m ( i s - 95 cd m a ) -6 4 -6 2 -6 0 -5 8 -5 6 -5 4 -5 2 -5 0 -4 8 -4 6 -4 4 824 829 834 839 844 849 fr e q ( m h z ) acp r ( d bc ) -7 0 -6 8 -6 6 -6 4 -6 2 -6 0 -5 8 -5 6 -5 4 -5 2 -5 0 al t r ( d bc ) -3 0 c 85 c 25 c data sheet: subject to change without notice
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module data sheet: subject to change without notice for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 8 typical performance (continued) a c p r an d a l t r @ p o u t = 16d b m ( i s - 95 cd m a ) -6 4 -6 2 -6 0 -5 8 -5 6 -5 4 -5 2 -5 0 -4 8 -4 6 -4 4 824 829 834 839 844 849 fr e q ( m h z ) acp r ( d bc ) -8 0 -7 8 -7 6 -7 4 -7 2 -7 0 -6 8 -6 6 -6 4 -6 2 -6 0 al t r ( d bc ) -3 0 c 85 c 25 c g a in @ p o u t = 16d b m an d 28d b m ( i s - 95 cd m a ) 22 23 24 25 26 27 28 29 30 31 32 824 829 834 839 844 849 fr e q ( m h z ) h i g h p o we r ga i n (db ) 25 26 27 28 29 30 31 32 33 34 35 l o w p o we r ga i n (db ) 85 c 25 c -3 0 c
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module data sheet: subject to change without notice for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 9 application information; tuning pr ocedures; board layout precautions triquint offers our customers the below evaluation board as a means for testing and analysis of TQM713019. the evaluation boar d schematic and picture are provided for pre liminary analysis and design. figure 1 shows the triquint application board, while f igure 2 shows the schematic of the board. 1 1 0 pin # function 1 n o c o n n e c t 2 vmode, high/low bias mode 3 vref, reference voltage 4 v c c 1 , 1 st stage collector voltage 5 gnd, dc ground 6 gnd, dc ground 7 v c c 2 , 2 nd stage collector voltage 8 v c c 2 , 2 nd stage collector voltage 9 gnd, dc ground 10 gnd, dc ground out in fi g ure 1: evaluation boar d TQM713019 vr ef vmo d e gn d rf in vc c 1 gnd gnd rf out gnd vc c 2 vref vm ode rf in v cc1 rf out vcc2 1 0000 pf 1 0000 pf 1000 00 p f 10u f 1 0 0000 pf 10uf gn d @ p a ddl e fi g ure 2: evaluation board schemati c
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module data sheet: subject to change without notice for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 10 pc board layout recommendations m j k n d e s t u d i m e n s i o n m m d 3.85 e 4.30 j 0.68 k 0.45 m 0.85 n 1.90 s 3.80 t 2.00 u 1.00 n o t e 1 : only ground signal t r aces are a llowed direct ly under t he package n o t e 2 : primary dimens ions are in millimeters alternate dimens ions are in inc hes .
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module data sheet: subject to change without notice for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 11 packaging and ordering information package type: 10 pin plastic module package designa t ion d e s c r i p t i o n d i m e n s i o n a overall height 1.5 +/-0.12 mm d packag e leng th 4.0 +/-0.1 mm e packag e width 4.0 +/-0.1 mm j so lder mask o pening leng th and width 0.575 +/-0.075 mm k metal pad length and width 0.40 +/-0.05 mm p distance between metal pad and packag e edg e 0.10 +/- 0 . 025 m m t g nd so lder mask o pening width 2.00 +/-0.05 mm s g nd so lder mask o pening leng th 3.80 +/-0.05 mm r distance between g nd so lder mask o pening and packag e edg e 0 . 1 0 + / - 0 . 1 m m q distance between g nd so lder mask o pening and packag e edg e 1 . 0 0 + / - 0 . 1 m m e terminal pitch for terminal 1-10, 2-9, 3-8, 4-7 and 5-6 3.400 mm e1 terminal pitch for terminal 1-2-3- 4-5 and 6-7-8-9-10 0.850 mm s ide view no te: gnd solder mask opening is not centered on the package top v iew 6 7 8 9 10 5 4 3 2 pi n 1 b o tto m view 6 7 9 10 8 3 5 4 2 1
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module data sheet: subject to change without notice for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 12 package marking 713019 yyww xxxx 6 7 9 10 8 5 2 1 3 4 bottom view to p view white ink or laser mark line 1: part number: 713019 line 2: yyww = year and work week line 3: xxxx = triquint assembly lot number
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 13 tape & reel part feat ure symbol size (in) size (mm) lengt h a 0 0.171 4 . 3 5 w i dt h b 0 0.171 4 . 3 5 dept h k 0 0.071 1 . 8 0 cavit y pit c h p 1 0.315 8 . 0 0 cavit y t o perforat ion lengt h direct ion p 2 0 . 0 7 9 2 . 0 0 dist ance bet ween cent erline cavit y t o perforat ion widt h direct ion f 0 . 2 1 7 5 . 5 0 cover t ape widt h c 0.362 9.20 carrier t ape widt h w 0.472 12.00 data sheet: subject to change without notice
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 14 soic-8, qsop 16, msop 08 & 10, t ssop 16, hp vf qf p-n 4x4 & 5x5, vq f n -24, vqf n -20. modules 4x4 13" reel part feat ure symbol size (in) size (mm) diamet e r a 12.992 3 3 0 t h i c k n e s s w 2 0.717 1 8 . 2 flange space bet ween flange w1 0.504 12.8 out e r diamet er n 4.016 102.0 arbor hole diamet er c 0.512 13.0 key slit widt h b 0.079 2.0 hub key slit diamet er d 0.787 20.0 module 4x4 user direction of feed data sheet: subject to change without notice reel quantit y = 2500 units
TQM713019 data sheet 3v hbt gaas cdma 4x4mm power amplifier module for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com rev . c 01/26/2005 15 additional information 1 t 1 for lates t s pec ific ations , additional produc t information, worldwide s a les and dis t ribution loc a tions , and information about triquint: web: h www.triquint.com h tel: (503) 615-9000 email: info_wireless@tqs.com fax: (503) 615-8902 for tec hnic a l ques tions and additional information on s pec ific applic ations : email: info_wireless@tqs.com the information provided herein is believed to be reliable; triquint assumes no liability for inaccuracies or omissions. triqui nt assumes no responsibility for the use of this inf o rmat ion, and all such inf o rmat ion shall be ent irely at t he us er's own risk. prices and specif icat ions are subject t o change wit hout not ice. no pat ent right s or licenses t o any of t he circuit s described herein are implied or grant ed t o any t h ird part y . tr iquint does not aut hor ize or war r ant any tr iquint pr oduct f o r use in lif e- suppor t devices and/ or syst ems. copyright ? 2004 triquint semiconduct o r, i n c. all right s reserved. data sheet: subject to change without notice

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