? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data data sheet 994, rev. b formerly part number shdg1024 600 volt, 40 amp igbt device high speed, improved scsoa with fast reverse recovery diode electrical characteristics (tj=25 0 c unless otherwise specified) p p a a r r a a m m e e t t e e r r s s y y m m b b o o l l m m i i n n t t y y p p m m a a x x u u n n i i t t igbt specifications collector to emitter breakdown voltage i c = 250 a, v ge = 0v bv ces 600 - - v continuous collector current t c = 25 o c t c = 90 o c i c - - 40 (1) 40 a pulsed collector current, 1ms i cm - - 130 a short circuit time, v ge = 15v, v ce = 500v, t j = 125 o c di/dt < 300 a/ sec, i c < 300a t sc - - 10 sec gate to emitter voltage v ge - - +/-20 v gate-emitter leakage current, v ge = +/-20v i ges - - +/- 100 na gate threshold voltage, i c =2ma v ge(th) 4.0 - 7.0 v zero gate voltage collector current v ce = 600 v, v ge =0v t i =25 o c v ce = 480 v, v ge =0v t i =125 o c i ces - - - - 0.25 3.0 ma ma collector to emitter saturation voltage, t c = 25 o c i c = 40a, v ge = 15v, t c = 125 o c v ce(sat) - 2.0 2.3 2.3 2.5 v input capacitance output capacitance reverse transfer cap. v ce = 25 v, v ge = 0 v, f = 1 mhz c ies c oes c res - 2800 300 200 - pf turn on delay time rise time turn off delay time fall time turn off energy loss (t j = 125 o c, i c = 40a, v ge = 15v, inductive load, v cc = 300 v, r g = 22 ? t d(on) t r t d(off) t f e off e on - - - - - 100 50 300 40 1.5 2.0 - - - - - nsec mj mj maximum thermal resistance r jc - - 0.60 o c/w SHD724402
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? technical data data sheet 994, rev. b ultrafast diode rating and characteristics parameter symbol min typ max unit diode peak inverse voltage piv 600 - - v continuous forward current, t c = 25 o c t c = 90 o c i f - - 40 (2) 40 (3) a forward surge current, t p = 10 msec i fsm - - 300 a diode forward voltage, i f = 40a v f - 1.5 1.8 v diode reverse recovery time diode reverse recovery charge (i f =30a, v rr =200v, di/dt=200 a/ s) t rr q rr - 160 180 1.2 nsec c maximum thermal resistance r jc - - 0.85 o c/w maximum and storage junction temperature t jmax -55 - 150 o c (1) current is limited by package leads. die current rating is 65a. (2) current is limited by package leads. die current rating is 75a. (3) current is limited by package leads. die current rating is 50a. schematic diagram: package drawing: (to258) SHD724402 ge c .270 .240 ( 6.86 6.10 ) .045 .035 ( 1.14 0.89 ) .140 ( 3.56 ) bsc .550 .530 ( 13.97 13.46 ) .695 .685 ( 17.65 17.40 ) .835 .815 ( 21.21 20.70 ) .707 .697 ( 17.96 17.70 ) 1.302 1.202 ( 33.07 30.53 ) .065 .055 ( 1.65 1.40 ) 3 places .200 ( 5.08 ) bsc 2 places .165 .155 ( 4.19 3.94 ) dia. e (2) c ( 3 ) g (1) 1 2 3
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? technical data data sheet 994, rev. b disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety shoul d be ensured by using semiconduc tor devices that feature assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any th ird party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thir d party. when exporting these products (t echnologies), the necessary procedur es are to be taken in accordance with related laws and regulatio ns. SHD724402
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