FZ06BIA070FS target datasheet flowsol 0 bi 600v/25a high efficiency ultra fast switching frequency low inductive design sic in boost and h bridge transformerless solar inverters FZ06BIA070FS tj=25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v t h =80c 28 t c =80c 38 t h =80c 33 t c =80c 50 maximum junction temperature t j max 150 c input boost mosfet v ds 600 v t h =80c 21 t c =80c 28 t h =80c 70 t c =80c 110 t j max 150 c maximum junction temperature i d v gs bypass diode pulsed drain current forward current per diode surge forward current dc drain current power dissipation per diode dc current p tot i 2 t v a w a a i dpulse gate-source peak voltage drain to source breakdown voltage t j =t j max 20 w t j =t j max t p limited by t j max a types i2t-value maximum ratings i fav a 2 s i fsm condition features flow0 housing target applications schematic 220 t j =25c t j =t j max t p =10ms 220 power dissipation p tot 159 copyright by vincotech 1 revision: 1
FZ06BIA070FS target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition input boost diode t h =80c 16 t c =80c 23 t h =80c 31 t c =80c 56 buck diode t h =80c 14 t c =80c 30 t h =80c 117 t c =80c 208 buck mosfet t h =80c 21 t c =80c 28 t h =80c 70 t c =80c 110 boost igbt t h =80c 27 t c =80c 34 t h =80c 53 t c =80c 81 t sc t j 150c 6 s v cc v ge =15v 360 v tc=25c 159 600 90 20 t j =t j max v rrm 600 dc forward current a t j =t j max t p limited by t j max a i f t c =100c 70 i frm t j =t j max peak repetitive reverse voltage repetitive peak forward current v rrm t j max p tot power dissipation peak repetitive reverse voltage dc forward current i frm maximum junction temperature i f w v a dc drain current i d t j max repetitive peak forward current drain to source breakdown voltage v ds power dissipation per diode p tot pulsed drain current i dpulse p tot gate-source peak voltage vgs maximum junction temperature power dissipation t j max t j =t j max i c v ge t j =t j max t j max p tot a v v c v w 150 20 175 a 600 c 175 maximum junction temperature c t p limited by t j max w 600 t j =t j max a t j =t j max short circuit ratings dc collector current power dissipation per igbt collector-emitter break down voltage repetitive peak collector current gate-emitter peak voltage v ce i cpuls maximum junction temperature v a v c w a t p limited by t j max 140 175 t j =25c t j =t j max t j =25c t p limited by t j max copyright by vincotech 2 revision: 1
FZ06BIA070FS target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+(tjmax - 25) c storage temperature t stg -40?+125 c copyright by vincotech 3 revision: 1
FZ06BIA070FS target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 0,7 1,06 1,3 t j =125c 0,99 t j =25c 0,90 t j =125c 0,75 t j =25c 0,01 t j =125c 0,02 t j =25c 0,05 t j =125c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,12 k/w t j =25c 0,07 t j =125c 0,17 t j =25c 2,5 3 3,5 t j =125c t j =25c 200 t j =125c t j =25c 25000 t j =125c t j =25c 16 t j =125c t j =25c 12 t j =125c t j =25c 83 t j =125c t j =25c 5 t j =125c t j =25c tbd t j =125c tbd t j =25c tbd t j =125c tbd t j =25c 170 t j =125c t j =25c t j =125c t j =25c t j =125c tj=25c 1,60 1,8 t j =150c 1,90 t j =25c 400 t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c di ( rec ) max t j =25c tbd /d t t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,50 k/w k/w i gss na v 0,0017 v (gs)th ns pf a/ s mws v mws c a nc a ns ? 215 3800 87 1200 12 10 reverse leakage current peak recovery current reverse recovery charge reverse recovery time peak rate of fall of recovery current input boost diode reverse recovered energy e off static drain to source on resistance 480 600 zero gate voltage drain current t d(off) turn on delay time rise time rgon=1,7 ? q g 26 tj=25c 21 na 400 10 tbd 0 100 26 26 reverse current v v ? ma 15 characteristic values forward voltage threshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) s olar invert e v to r t bypass diode thermal resistance chip to heatsink per chip 1,00 thermal grease thickness 50um = 1 w/mk c iss r thjh c oss c rss value conditions 0 t r t d(on) i dss i r rgoff=1,7 ? vgs=vds input boost mosfet reverse transfer capacitance gate to source charge turn-on energy loss per pulse output capacitance gate to drain charge total gate charge gate threshold voltage gate to source leakage current turn off delay time forward voltage v f e rec i rrm i rm q rr t rr t f fall time turn-off energy loss per pulse input capacitance e on q gs q gd r ds(on) 20 10 0 f=1mhz rgon=1,7 ? 13 rgon=1,7 ? 10 480 480 12 12 copyright e \ vincotech 4 revision: 1
FZ06BIA070FS target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value conditions t j =25c 1,60 1,8 t j =150c 1,90 t j =25c tbd t j =150c t j =25c tbd t j =150c t j =25c tbd t j =150c di ( rec ) max t j =25c tbd /d t t j =150c t j =25c tbd t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 3,50 k/w t j =25c 70 t j =125c 170 t j =25c 2,5 3 3,5 t j =125c t j =25c 200 t j =125c t j =25c 25000 t j =125c t j =25c 16 t j =125c t j =25c 12 t j =125c t j =25c 83 t j =125c t j =25c 5 t j =125c t j =25c tbd t j =125c tbd t j =25c tbd t j =125c tbd k/w tj=25c tj=25c 170 87 215 21 na ns a v nc na total gate charge reverse transfer capacitance thermal resistance chip to heatsink per chip buck diode input capacitance gate to source leakage current turn on delay time t f output capacitance turn-on energy loss per pulse 26 turn off delay time rise time gate to drain charge gate to source charge turn-off energy loss per pulse fall time rgon=1,7 ? 1,00 pf ns tbd mws 3800 v c mws a/ s m ? buck mosfet reverse recovery time reverse recovered energy peak rate of fall of recovery current diode forward voltage gate threshold voltage e off c iss c oss q gs peak reverse recovery current zero gate voltage drain current i dss static drain to source on resistance i rrm reverse recovered charge v f erec r thjh c rss v (gs)th i gss t r t d(off) e on q gd q g q rr t rr t d(on) r ds(on) rgoff=1,7 ? thermal grease thickness 50um = 1 w/mk 10 10 10 13 0 rgon=1,7 ? f=1mhz 0 480 20 100 400 26 480 26 0 v ds =v gs 6 6 0,0017 600 copyright e \ vincotech 5 revision: 1
FZ06BIA070FS target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value conditions t j =25c 5 5,8 6,5 t j =150c t j =25c 1,39 t j =150c 1,51 t j =25c 0,2 t j =150c t j =25c 650 t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,78 k/w note: for the boost igbt only lf switching allowed r 25 tol. 5% tj=25c 20,9 22 23,1 k ? r 100 tj=100c 1486 ? * see details on thermistor charts on figure 2. none 108 1630 167 tj=25c tj=25c 25 30 0,00043 20 15 0 ma na v v i ges v ce =v ge f=1mhz c oss c rss 600 r gint power dissipation p rated resistance* thermistor b-value b (25/100) tol. 3% mw 200 15 nc 30 k 0 ? tj=25c i ces v ge(th) v ce(sat) c ies 480 reverse transfer capacitance 0 gate charge input capacitance output capacitance collector-emitter saturation voltage collector-emitter cut-off incl diode integrated gate resistor q gate boost igbt gate-emitter leakage current gate emitter threshold voltage 50 tj=25c 3998 pf copyright e \ vincotech 6 revision: 1
FZ06BIA070FS target datasheet ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ06BIA070FS-p894e p894e p894e outline pinout ordering code & marking ordering code and marking - outline - pinout c opyright by vincotec h 7 revision: 1
FZ06BIA070FS target datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. c opyright by vincotec h 8 revision: 1
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