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ap4503agem-hf advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v lower gate charge r ds(on) 26m fast switching performance i d 7a rohs compliant & halogen-free p-ch bv dss -30v r ds(on) 52m description i d -5a absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 drain current , v gs @ 10v 3 7.0 -5.0 a i d @t a =70 drain current , v gs @ 10v 3 5.5 -4.0 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation 2 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice 201501063 parameter 1 thermal data halogen-free product ap4503a series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide ra nge of power applications. the so-8 package is widely preferred for all commercial-ind ustrial surface mount applications using infrared reflow techniqu e and suited for voltage conversion or switch application s. s1 g1 s2 g2 d1 d1 d2 d2 so-8 s1 g1 d1 s2 g2 d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - 18 26 m v gs =4.5v, i d =4a - 24 38 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forward transconductance v ds =10v, i d =8a - 15 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =7a - 7 11.2 nc q gs gate-source charge v ds =15v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =15v - 7 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 - 18 - ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 800 1280 pf c oss output capacitance v ds =15v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 80 - pf r g gate resistance f=1.0mhz - 1.3 2.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =7a, v gs =0 v , - 15 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc 2 ap4503agem-hf ap4503agem-hf p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - 42 52 m v gs =-4.5v, i d =-3a - 54 80 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 -1.5 -3 v g fs forward transconductance v ds =-10v, i d =-4a - 9 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-4a - 7 11.2 nc q gs gate-source charge v ds =-15v - 2.2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 2.7 - nc t d(on) turn-on delay time v ds =-15v - 8 - ns t r rise time i d =-1a - 4.5 - ns t d(off) turn-off delay time r g =3.3 - 22 - ns t f fall time v gs =-10v - 5 - ns c iss input capacitance v gs =0v - 830 1330 pf c oss output capacitance v ds =-15v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 6 12 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-4a, v gs =0v, - 18 - ns q rr reverse recovery charge di/dt=100a/s - 13 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 3 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. ap4503agem-hf n-channel fig 1. typical output characteristics fig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 4 0 10 20 30 0 1 2 3 4 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 16 18 20 22 24 26 28 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on0 (m ? ) i d = 4a t a = 25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua ap4503agem-hf n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs 30 -30 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 5 0 2 4 6 8 10 0 3 6 9 12 15 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 7 a v ds = 15 v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 10 20 30 0 1 2 3 4 5 6 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j =-40 o c 0 2 4 6 8 10 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) ap4503agem-hf p-channel fig 1. typical output characteristics f ig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 6 0 4 8 12 16 20 0 1 2 3 4 5 6 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 0 4 8 12 16 20 0 2 4 6 8 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 40 50 60 70 2 4 6 8 10 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -2 a t a =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -4 a v g = - 10v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = -250ua ap4503agem-hf p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 -30 fig 9. maximum safe operating area fig 10. eff ective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 7 0 2 4 6 8 10 0 4 8 12 16 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -4a v ds = -15v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1 s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 4 8 12 16 20 0 1 2 3 4 5 6 7 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0 1 2 3 4 5 6 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) t j = -40 o c ap4503agem-hf marking information 8 4503agem ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only |
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