1. product profile 1.1 general description 30 w ldmos power transistor for industrial, sci entific and medical (ism) applications at frequencies from 2400 mhz to 2500 mhz. the blf2425m9l30 and blf2425m9ls30 are drivers designed for high power cw applications and are assembled in a high performance ceramic package. 1.2 features and benefits ? high efficiency ? high power gain ? excellent ruggedness ? excellent thermal stability ? integrated esd protection ? designed for broadband operation (2400 mhz to 2500 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications in the frequency range from 2400 mhz to 2500 mhz blf2425m9l30; blf2425m9ls30 power ldmos transistor rev. 1 ? 3 june 2015 objective data sheet table 1. typical performance rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f v ds p l(av) g p ? d (mhz) (v) (w) (db) (%) cw 2450 32 30 18.5 61
blf2425m9l30_m9ls30 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. al l rights reserved. objective data sheet rev. 1 ? 3 june 2015 2 of 12 nxp semiconductors blf2425m9l30; blf2425m9ls30 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol blf2425m9l30 (sot1135a) 1drain 2gate 3source [1] blf2425m9ls30 (sot1135b) 1drain 2gate 3source [1] v \ p v \ p table 3. ordering information type number package name description version blf2425m9l30 - flanged ceramic package; 2 mounting holes; 2 leads sot1135a blf2425m9ls30 - earless flanged ceramic package; 2 leads sot1135b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
blf2425m9l30_m9ls30 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. al l rights reserved. objective data sheet rev. 1 ? 3 june 2015 3 of 12 nxp semiconductors blf2425m9l30; blf2425m9ls30 power ldmos transistor 5. thermal characteristics [1] when operated with a cw signal. 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf2425m9l30 and blf2425m9ls30 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; i dq =20ma; p l = 30 w (cw); f = 2450 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =50 ?c; p l =30 w [1] 0.9 k/w table 6. dc characteristics t j = 25 ? c per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.3ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 30 ma 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =32v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -6.2- a i gss gate leakage current v gs =11 v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d =30ma - 0.264 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =1a -0.410.76 ? table 7. rf characteristics test signal: cw at f = 2450 mhz; rf performance at v ds = 32 v; i dq = 20 ma; t case = 25 ? c; unless otherwise specified; in a cl ass-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 30 w 17 18.5 - db rl in input return loss p l = 30 w - ? 8 ? 6db ? d drain efficiency p l = 30 w 57 61 - %
blf2425m9l30_m9ls30 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. al l rights reserved. objective data sheet rev. 1 ? 3 june 2015 4 of 12 nxp semiconductors blf2425m9l30; blf2425m9ls30 power ldmos transistor 7.2 impedance information table 8. typical impedance measured load-pull data. typical va lues unless otherwise specified. f z s z l (mhz) (? ) ( ? ) 2400 9.0 ? 12.5j 12.0 ? 2.0j 2450 9.1 ? 17.9j 10.4 ? 4.3j 2500 16.0 ? 17.3j 10.3 ? 4.2j fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h
blf2425m9l30_m9ls30 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. al l rights reserved. objective data sheet rev. 1 ? 3 june 2015 5 of 12 nxp semiconductors blf2425m9l30; blf2425m9ls30 power ldmos transistor 7.3 test circuit printed-circuit board (pcb): duroid 6035htc; height = 0.762 mm. see table 9 for a list of components. fig 2. component layout table 9. list of components see figure 2 for component layout. component description value remarks c1, c2, c4, c5 multilayer ceramic chip capacitor 15 pf atc100a150ft150xt c3 multilayer ceramic chip capacitor 0.3 pf atc100a0r6bt150xtv c6, c7 multilayer ceramic chip capacitor 0.8 pf atc100a0r8bt150xtv c8, c10 multilayer ceramic chip capacitor 100 nf grm21br71h104ka01l c9, c11 multilayer ceramic chip capacitor 4.7 ? f grm32er71h475ka88l r1 smd resistor 9.1 ? smd 0603 d d d p p p p p p & |