1. product profile 1.1 general description 250 w ldmos power transistor for industrial, sc ientific and medical (ism) applications at frequencies from 2400 mhz to 2500 mhz. the blf2425m7l250p and blf2425m7ls250p are designed for high-power cw applications and are assembled in high performance ceramic packages, available in eared and earless versions 1.2 features and benefits ? high efficiency ? easy power control ? excellent ruggedness ? excellent thermal stability ? integrated esd protection ? designed for broadband operation (2400 mhz to 2500 mhz) ? internally matched ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for cw applications in the 2400 mhz to 2500 mhz frequency range such as ism and industrial heating. blf2425m7l250p; blf2425m7ls250p power ldmos transistor rev. 4 ? 12 july 2013 product data sheet table 1. typical performance rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f v ds p l(av) g p ? d (mhz) (v) (w) (db) (%) cw 2450 28 250 15 51
blf2425m7l250p_2425m7ls250p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. product data sheet rev. 4 ? 12 july 2013 2 of 11 nxp semiconductors blf2425m7l(s)250p power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol blf2425m7l250p (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] blf2425m7ls250p (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version blf2425m7l250p - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a blf2425m7ls250p - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 225 ?c
blf2425m7l250p_2425m7ls250p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. product data sheet rev. 4 ? 12 july 2013 3 of 11 nxp semiconductors blf2425m7l(s)250p power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf2425m7l250p and blf2425m7ls250p are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =20ma; p l = 250 w (cw); f = 2450 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; p l = 250 w 0.19 k/w table 6. dc characteristics t j = 25 ? c per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.2ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 220 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0 v; v ds =28v--3 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -39-a i gss gate leakage current v gs =11 v; v ds = 0 v - - 300 na g fs forward transconductance v ds =10v; i d =11a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.7a -0.08- ? table 7. rf characteristics test signal: cw at 2450 mhz; rf performance at v ds = 28 v; i dq = 20 ma; t case = 25 ? c; unless otherwise specified; in a cl ass-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 250 w 14 15 - db rl in input return loss p l = 250 w - ? 18 ? 10 db ? d drain efficiency p l = 250 w 46 51 - %
blf2425m7l250p_2425m7ls250p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. product data sheet rev. 4 ? 12 july 2013 4 of 11 nxp semiconductors blf2425m7l(s)250p power ldmos transistor 7.2 impedance information 7.3 test circuit table 8. typical impedance measured load-pull data half device. ty pical values unless otherwise specified. i dq =20ma; v ds =28v. z s and z l defined in figure 1 . f z s z l (mhz) (? ) ( ? ) 2400 2.3 ? 6.3j 3.8 ? 2.7j 2450 3.3 ? 6.0j 2.5 ? 2.9j 2500 4.1 ? 6.0j 3.3 ? 2.3j fig 1. definition of transistor impedance 001aak544 gate 1 gate 2 drain 2 drain 1 z s z l printed-circuit board (pcb): rogers ro4350b; thickness = 0.76 mm. see table 9 for list of components. fig 2. component layout for test circuit & |