1. product profile 1.1 general description 100 w ldmos power transistor for industrial applications at frequencies from 2300 mhz to 2400 mhz. [1] single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on the ccdf. c hannel bandwidth is 1.2288 mhz. [2] 3gpp; test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf. channel bandwidth is 3.84 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for low memory effect s providing excellent digita l pre-distortion capability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for industrial and mult i carrier applications in the 2300 mhz to 2400 mhz frequency range blf2425m7l100; blf2425m7ls100 power ldmos transistor rev. 1 ? 6 december 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 885k acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) (dbc) is-95 2300 to 2400 900 28 20 18 27 ? 46 [1] - 1 carrier w-cdma 2300 to 2400 900 28 30 18.7 33 - ? 40 [2]
blf2425m7l100_2425m7ls100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 6 december 2013 2 of 13 nxp semiconductors blf2425m7l(s)100 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol blf2425m7l100 (sot502a) 1drain 2gate 3source [1] blf2425m7ls100 (sot502b) 1drain 2gate 3source [1] v \ p v \ p table 3. ordering information type number package name description version blf2425m7l100 - flanged ceramic package; 2 mounting holes; 2 leads sot502a blf2425m7ls100 - earless flanged ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =100w 0.3 k/w
blf2425m7l100_2425m7ls100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 6 december 2013 3 of 13 nxp semiconductors blf2425m7l(s)100 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf2425m7l100 and blf2425m7ls100 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =900ma; p l = 100 w (cw); f = 2300 mhz. table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 150 ma 1.5 1.8 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 5 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 25.1 29 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 500 na g fs forward transconductance v ds =10v; i d =5.35a - 10.5 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.25a -0.1- ? table 7. rf characteristics test signal: single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on th e ccdf, channel bandwidth is 1.2288 mhz; f 1 =2300mhz; f 2 = 2400 mhz; rf performance at v ds =28v; i dq = 900 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) =20w 17.3 18 - db rl in input return loss p l(av) =20w - ? 14 - db ? d drain efficiency p l(av) =20w 22 27 - % acpr 885k adjacent channel power ratio (885 khz) p l(av) =20w - ? 46 ? 40 dbc
blf2425m7l100_2425m7ls100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 6 december 2013 4 of 13 nxp semiconductors blf2425m7l(s)100 power ldmos transistor 7.2 graphical data 7.2.1 single carrier is-95 single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on the ccdf. channel bandwidth is 1.2288 mhz. v ds = 28 v; i dq = 900 ma. (1) f = 2300 mhz (2) f = 2400 mhz v ds = 28 v; i dq = 900 ma. (1) f = 2300 mhz (2) f = 2400 mhz fig 1. power gain as a function of output power; typical values fig 2. drain efficiency as a function of output power; typical values v ds = 28 v; i dq = 900 ma. (1) f = 2300 mhz (2) f = 2400 mhz v ds = 28 v; i dq = 900 ma. (1) f = 2300 mhz (2) f = 2400 mhz fig 3. adjacent channel power ratio (885 khz) as a function of output power; typical values fig 4. adjacent channel power ratio (1980 khz) as a function of output power; typical values 3 / : d d q * s g % 3 / : d d q ' 3 / : d d q $ 3 & |