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hexfet power mosfet
top view 8 1 2 3 4 5 6 7 d d d g s a d s s so-8 parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -16 i d @ t a = 70c continuous drain current, v gs @ -4.5v -13 a i dm pulsed drain current -65 p d @t a = 25c power dissipation 2.5 p d @t a = 70c power dissipation 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 8 v t j, t stg junction and storage temperature range -55 to +150 c

features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds -12 v r ds(on) max (@v gs = -4.5v) 7 r ds(on) max (@v gs = -2.5v) 9 r ds(on) max (@v gs = -1.8v) 13 q g (typical) 91 nc i d (@t a = 25c) -16 a m

!" form quantity IRF7410PBF-1 so-8 tape and reel 4000 irf7410trpbf-1 package type standard pack orderable part number base part number

!" s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle # surface mounted on 1 in square cu board, t 10sec. electrical characteristics @ tj = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -12 ??? ??? v . 0.00 1 0. 0. v gs(th) / t j gate threshold voltage coefficient ??? -3.09 ??? mv/c gfs forward transconductance 55 ??? ??? s i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -25 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 q g total gate charge ??? 91 q gs gate-to-source charge ??? 18 ??? q gd gate-to-drain ("miller") charge ??? 25 t d(on) turn-on delay time ??? 13 20 t r rise time ??? 12 18 t d(off) turn-off delay time ??? 271 407 t f fall time ??? 200 300 c iss input capacitance ??? 8676 ??? c oss output capacitance ??? 2344 ??? c rss reverse transfer capacitance ??? 1604 ??? source-drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 97 145 ns t j = 25c i f = -2.5a q rr reverse recovery charge ??? 134 201 100 s r ds(on) static drain-to-source on-resistance ??? ??? ??? ??? -2.5 -65 ns pf a v gs = -2.5v, i d = -13.6a v gs = -1.8v, i d = -11.5a v ds = v gs , i d = -250 a m a na nc v ds = -10v, i d = -16a i d = -16a v gs = -8v v gs = 8v mosfet symbol showing the v ds =-9.6v conditions r g = 6 v gs = 0v v ds = -10v ? = 1.0 mhz t j = 25c, i s = -2.5a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -16a v ds = -9.6v, v gs = 0v v ds = -9.6v, v gs = 0v, t j = 70c i d =-1.0a r d = 6 v gs = -4.5v v dd = -6v v gs = -4.5v
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -16a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 60 s pulse width tj = 150c vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -10v 60 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v -1.0v 60 s pulse width tj = 25c

!" fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 120 0 1 2 3 4 5 6 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -16a v = -9.6v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 -v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 14000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) -i , drain current (a) c d & &

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0.1 % & & '( + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms

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!" fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0.0 2.0 4.0 6.0 8.0 -v gs, gate -to -source voltage (v) 0.002 0.004 0.006 0.008 0.010 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = -16a fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 -id , drain current ( a ) 0 0.005 0.01 0.015 0.02 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = -2.5v v gs = -1.8v v gs = -4.5v
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fig 15. typical vgs(th) vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 - v g s ( t h ) ( v ) i d = -250 a fig 16 typical power vs. time 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 100 200 300 400 500 600 700 p o w e r ( w )

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!" so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mil l ime t e r s inches min max di m 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. notes : 1. dimens ioning & tolerancing per as me y14.5m-1994. 2. cont rolling dime ns ion: millime t e r 3. dimens ions are shown in millimet ers [inches]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mold protrus ions not t o exceed 0.25 [.010]. 7 dimens ion is the length of lead f or s oldering t o a s ubs trat e. mold protrus ions not t o exceed 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: this is an irf7101 (mos f et) f7101 xxxx international logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = week a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inche s) ) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

!" ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level so-8 date comments ? corrected part number from" IRF7410PBF-1" to "irf7410trpbf-1" -all pages ? removed the "IRF7410PBF-1" bulk part number from ordering information on page1 revision history 10/16/2014

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