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1. product profile 1.1 general description 130 w ldmos transistor intended for pulsed applications in the 0.5 ghz to 1.4 ghz range. 1.2 features and benefits ? easy power control ? integrated dual side esd protection ? high flexibility with resp ect to pulse formats ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (0.5 ghz to 1.4 ghz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? amplifiers for pulsed applications in the 0.5 ghz to 1.4 ghz frequency range bll8h0514l-130; bll8h0514ls-130 ldmos driver transistor rev. 2 ? 9 february 2015 product data sheet table 1. application information typical rf performance at t case =25 ? c; i dq = 50 ma; in a class-ab application circuit. test signal f t p ? v ds p l g p rl in ? d p droop(pulse) t r t f (mhz) ( ? s) (%) (v) (w) (db) (db) (%) (db) (ns) (ns) pulsed rf 960 to 1215 128 10 50 130 19 10 54 0 15 8 1200 to 1400 300 10 50 130 17 10 50 0 15 8
bll8h0514l-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 20 15. all rights reserved. product data sheet rev. 2 ? 9 february 2015 2 of 13 nxp semiconductors bll8h0514l(s)-130 ldmos driver transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol bll8h0514l-130 (sot1135a) 1drain 2gate 3source [1] bll8h0514ls-130 (sot1135b) 1drain 2gate 3source [1] v \ p v \ p table 3. ordering information type number package name description version bll8h0514l-130 - flanged ceramic package; 2 mounting holes; 2 leads sot1135a bll8h0514ls-130 - earless flanged ceramic package; 2 leads sot1135b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage ? 6+13v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c bll8h0514l-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 20 15. all rights reserved. product data sheet rev. 2 ? 9 february 2015 3 of 13 nxp semiconductors bll8h0514l(s)-130 ldmos driver transistor 5. thermal characteristics 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit z th(j-c) transient thermal impedance from junction to case t case =85 ?c; p l = 130 w t p = 100 ? s; ? = 10 % 0.17 k/w t p = 200 ? s; ? = 10 % 0.22 k/w t p = 300 ? s; ? = 10 % 0.25 k/w t p = 100 ? s; ? = 20 % 0.23 k/w t p = 1 ms; ? = 10 % 0.36 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 630 ma 100 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 135 ma 1.3 1.8 2.25 v i dss drain leakage current v gs =0v; v ds =50v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 15.8 18 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 135 ma 806 - 1578 ms r ds(on) drain-source on-state resistance v gs =v gs(th) + 6.25 v; i d = 135 ma -200275m ? table 7. rf characteristics test signal: pulsed rf; t p = 300 ? s; ? = 10 %; rf performance at v ds =50v; i dq =50ma; f = 1.2 ghz to 1.4 ghz; t case =25 ? c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit v ds drain-source voltage p l =130w--50v g p power gain p l =130w 1517- db rl in input return loss p l =130w - ? 10 ? 7db ? d drain efficiency p l =130w 4550- % p droop(pulse) pulse droop power p l =130w - 0 0.3 db t r rise time p l = 130 w - 20 50 ns t f fall time p l =130w - 6 50 ns bll8h0514l-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 20 15. all rights reserved. product data sheet rev. 2 ? 9 february 2015 4 of 13 nxp semiconductors bll8h0514l(s)-130 ldmos driver transistor 7. application information 7.1 ruggedness in class-ab operation the bll8h0514l-130 and bll8h0514ls-130 are capable of withstanding a load mismatch corresponding to vswr = 5 : 1 through all phases under the following conditions: v ds =50v; i dq =50ma; p l = 130 w; f = 1.2 ghz to 1.4 ghz; t p = 300 ? s; ? =10%. 7.2 impedance information table 8. typical impedance f z s z l (mhz) (? ) (? ) 1200 1.21 ? j3.44 2.40 ? j0.63 1300 1.56 ? j4.49 2.30 ? j0.87 1400 2.21 ? j4.86 2.00 ? j1.71 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h bll8h0514l-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 20 15. all rights reserved. product data sheet rev. 2 ? 9 february 2015 5 of 13 nxp semiconductors bll8h0514l(s)-130 ldmos driver transistor 7.3 performance curves v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. fig 2. power gain and drain efficiency as function of frequency; typical values fig 3. input return loss as a function of frequency; typical values d d p i * + ] * s g % ' * s ' d d p i * + ] 5 / l q g % v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. (1) f = 1.2 ghz (2) f = 1.3 ghz (3) f = 1.4 ghz v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. (1) f = 1.2 ghz (2) f = 1.3 ghz (3) f = 1.4 ghz fig 4. power gain as a function of output power; typical values fig 5. drain efficiency as a function of output power; typical values 3 / : d d p * s g % 3 / : d d p ' bll8h0514l-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 20 15. all rights reserved. product data sheet rev. 2 ? 9 february 2015 6 of 13 nxp semiconductors bll8h0514l(s)-130 ldmos driver transistor 8. test information v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. (1) f = 1.2 ghz (2) f = 1.3 ghz (3) f = 1.4 ghz fig 6. output power as a function of input power; typical values 3 l : d d p 3 / : printed-circuit board (pcb) material: duroid 6006 with ? r = 6.15 and thickness = 0.64 mm. see table 9 for list of components. fig 7. component layout d d p & |