20 stern ave. springfield, new jersey 07081 u s a silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 MJW21191 description ? dc current gain specified up to 8.0 amperes at temperature ? highsoa:20a, 18v, 100ms ? to-3pn package ? complement to type mjw21192 applications ? designed for power audio output, or high power drivers in audio amplifiers applications absolute maximum ratings(ta=2s'c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-pulse base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value 150 150 5 8 16 2 100 150 -55-150 unit v v v a a a w "c 'c thermal characteristics symbol rth j-c rth j-a parameter thermal resistance, junction to case thermal resistance, junction to ambient max 0.65 50 unit ?c/w ?c/w 1 1 1 2 : i '-< pin 1.base 2. collector 3. emitter to-3pn package m ? h 1 f k ?t dim a b c d e f g h j k l n q r s u y c ?*- y *" mm min 19.90 15.38 4.75 0.90 1.90 3.40 2.98 3.20 0.595 19.95 1.98 10.8s 4.95 3.35 1.995 5.90 9.90 max 20.10 15.42 4.85 1.10 2.10 3.60 3.02 3.40 0.605 20.25 2.02 10.91 5.05 3.45 2.005 6.10 10.10 ?;c;) 't ^n" nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor MJW21191 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vse(on) ices iebo hfe-1 hfe-2 fl parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current . dc current gain dc current gain current-gain ? bandwidth product conditions lc= 10ma; ib= 0 lc= 4a; ls= 0.4a lc= 8a; ib= 1 .6a lc= 4a; vce= 2v vcb= 250v; ie= 0 veb= 5v; lc= 0 lc= 4a ; vce= 2v lc= 8a ; vce= 2v le=1a;vce=10v min 150 15 5.0 4 typ. max 1.0 2.0 2.0 10 10 100 unit v v v v ua ua mhz
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