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| 2013. 1. 3 1/2 semiconductor technical data kdr730f schottky barrier type diode revision no : 1 low current rectification and high speed switching. features h low forward voltage. h high reliability. h small package . maximum rating (ta=25 ? ) tfsc dim millimeters b 0.80+0.10/-0.05 e 0.40 max 0.13 0.05 f 0.10 max g 0.25 max h a 1.00 0.05 + _ c 0.60 0.05 + _ d 0.30 0.05 + _ + _ e f cathode mark c d b a h g electrical characteristics (ta=25 ? ) type name marking q characteristic symbol test condition min. typ. max. unit forward voltage v f i f =10ma - - 0.45 v reverse current i r v r =10v - - 0.5 a characteristic symbol rating unit reverse voltage v r 30 v average forward current i o 100 ma surge current(10ms) i fsm 500 ma junction temperature t j 125 ? storage temperature range t stg -55 q 125 ?
2013. 1. 3 2/2 kdr730f revision no : 1 |
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