si1563edh features ? trenchfet ? power mosfets: 1.8 v rated ? esd protected: 2000 v ? thermally enhanced sc-70 package applications ? load switching ? pa switch ? level switch product summary v ds (v) r ds(on) ( ) i d (a) n-channel 20 0.280 at v gs = 4.5 v 1.28 0.360 at v gs = 2.5 v 1.13 0.450 at v gs = 1.8 v 1.0 p-channel - 20 0.490 at v gs = - 4.5 v - 1.0 0.750 at v gs = - 2.5 v - 0.81 1.10 at v gs = - 1.8 v - 0.67 sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top v ie w s 1 g 1 d 2 d 1 g 2 s 2 marking code ea xx lot tracea b ility and date code part # code yy p-channel d 1 s 1 g 1 1 k n -channel 3 k d 2 s 2 g 2 ordering information: si1563edh-t1 SI1563EDH-T1-E3 (lead (p b )-free) notes: a. surface mounted on 1" x 1" fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted n-channel p-channel parameter symbol 5 s steady state 5 s steady state unit drain-source voltage v ds 20 - 20 v gate-source voltage v gs 12 12 continuous drain current (t j = 150 c) t a = 25 c i d 1.28 1.13 - 1.0 - 0.88 a t a = 85 c 0.92 0.81 - 0.72 - 0.63 pulsed drain current i dm 4.0 - 3.0 continuous source current (diode conduction) a i s 0.61 0.48 - 0.61 - 0.48 maximum power dissipation a t a = 25 c p d 0.74 0.57 0.30 0.57 w t a = 85 c 0.38 0.30 0.16 0.3 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 s r thja 130 170 c/w steady state 170 220 maximum junction-to-foot (drain) steady state r thjf 80 100 a v aila b le p b -free rohs* compliant product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 100 a n-ch 0.45 v v ds = v gs , i d = - 100 a p-ch - 0.45 gate-body leakage i gss v ds = 0 v, v gs = 4.5 v n-ch 1 a p-ch 1 v ds = 0 v, v gs = 12 v n-ch 10 ma p-ch 10 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v n-ch 1 a v ds = - 16 v, v gs = 0 v p-ch - 1 v ds = 16 v, v gs = 0 v, t j = 85 c n-ch 5 v ds = - 16 v, v gs = 0 v, t j = 85 c p-ch - 5 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v n-ch 2 a v ds - 5 v, v gs = - 4.5 v p-ch - 2 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.13 a n-ch 0.220 0.280 v gs = - 4.5 v, i d = - 0.88 a p-ch 0.400 0.490 v gs = 2.5 v, i d = 0.99 a n-ch 0.281 0.360 v gs = - 2.5 v, i d = - 0.71 a p-ch 0.610 0.750 v gs = 1.8 v, i d = 0.20 a n-ch 0.344 0.450 v gs = - 1.8 v, i d = - 0.20 a p-ch 0.850 1.10 forward transconductance a g fs v ds = 10 v, i d = 1.13 a n-ch 2.6 s v ds = - 10 v, i d = - 0.88 a p-ch 1.5 diode forward voltage a v sd i s = 0.48 v, v gs = 0 v n-ch 0.8 1.2 v i s = - 0.48 v, v gs = 0 v p-ch - 0.8 - 1.2 dynamic b total gate charge q g n-channel v ds = 10 v, v gs = 4.5 v, i d = 1.13 a p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 0.88 a n-ch 0.65 1.0 nc p-ch 1.2 1.8 gate-source charge q gs n-ch 0.2 p-ch 0.3 gate-drain charge q gd n-ch 0.23 p-ch 0.3 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 10 v, r l = 20 i d ? 0.5 a, v gen = 4.5 v, r g = 6 p-channel v dd = - 10 v, r l = 20 i d ? - 0.5 a, v gen = - 4.5 v, r g = 6 n-ch 45 70 ns p-ch 150 230 rise time t r n-ch 85 130 p-ch 480 720 turn-off delay time t d(off) n-ch 350 530 p-ch 840 1200 fall time t f n-ch 210 320 p-ch 850 1200 si1563edh product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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